IRL540N
PRELIMINARY
HEXFET
Power MOSFET
PD - 9.1495
S
D
G
V
DSS
= 100V
R
DS(on)
= 0.044
I
D
= 30A
TO-220AB
8/14/96
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
30
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
21
A
I
DM
Pulsed Drain Current
120
P
D
@T
C
= 25C
Power Dissipation
94
W
Linear Derating Factor
0.63
W/C
V
GS
Gate-to-Source Voltage
16
V
E
AS
Single Pulse Avalanche Energy
310
mJ
I
AR
Avalanche Current
18
A
E
AR
Repetitive Avalanche Energy
9.4
mJ
dv/dt
Peak Diode Recovery dv/dt
4.3
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Mounting torque, 6-32 or M3 srew
10 lbfin (1.1Nm)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
1.6
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
C/W
R
JA
Junction-to-Ambient
62
Thermal Resistance
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
l
Logic-Level Gate Drive
l
Advanced Process Technology
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
l
Sink to Lead Creepage Dist. = 4.8mm
l
Fully Avalanche Rated
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IRL540N
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
100
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.11
V/C
Reference to 25C, I
D
= 1mA
0.044
V
GS
= 10V, I
D
= 18A
0.053
V
GS
= 5.0V, I
D
= 18A
0.063
V
GS
= 4.0V, I
D
= 15A
V
GS(th)
Gate Threshold Voltage
1.0
2.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
14
S
V
DS
= 25V, I
D
= 18A
25
A
V
DS
= 100V, V
GS
= 0V
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
nA
V
GS
= 16V
Gate-to-Source Reverse Leakage
-100
V
GS
= -16V
Q
g
Total Gate Charge
74
I
D
= 18A
Q
gs
Gate-to-Source Charge
9.4
nC
V
DS
= 5.0V
Q
gd
Gate-to-Drain ("Miller") Charge
38
V
GS
= 5.0V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
11
V
DD
= 50V
t
r
Rise Time
81
ns
I
D
= 18A
t
d(off)
Turn-Off Delay Time
39
R
G
= 5.0
,
V
GS
= 5.0V
t
f
Fall Time
62
R
D
= 2.7
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
1800
V
GS
= 0V
C
oss
Output Capacitance
350
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
170
= 1.0MHz, See Fig. 5
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25C, L = 1.9mH
R
G
= 25
, I
AS
= 18A. (See Figure 12)
.
Notes:
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
nH
I
GSS
S
D
G
L
S
Internal Source Inductance
7.5
R
DS(on)
Static Drain-to-Source On-Resistance
L
D
Internal Drain Inductance
4.5
I
DSS
Drain-to-Source Leakage Current
I
SD
18A, di/dt
180A/s, V
DD
V
(BR)DSS
,
T
J
175C
Pulse width
300s; duty cycle
2%
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 18A, V
GS
= 0V
t
rr
Reverse Recovery Time
190
290
ns
T
J
= 25C, I
F
= 18A
Q
rr
Reverse RecoveryCharge
1.1
1.7
C
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
30
120
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IRL
540N
Fig 1. Typical Output Characteristics,
T
J
= 25
o
C
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics,
T
J
= 175
o
C
Fig 4. Normalized On-Resistance
Vs. Temperature
1
10
100
1000
0.1
1
10
100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
D S
A
20s PULSE WIDTH
T = 25C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
B O T T O M 2 . 5 V
2.5V
1
10
100
1000
0.1
1
10
100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
D S
A
20s PULSE WIDTH
T = 175C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
B O T T O M 2 . 5 V
2.5V
J
1
1 0
1 0 0
1 0 0 0
2
4
6
8
10
T = 25C
J
G S
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
T = 175C
J
A
V = 50V
20s PULSE WIDTH
D S
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
3 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , Junction Temperature (C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
G S
A
I = 30A
D
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IRL540N
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
1 0
1 0 0
1 0 0 0
0 . 4
0 . 6
0 . 8
1 . 0
1 . 2
1 . 4
1 . 6
1 . 8
T = 25C
J
V = 0V
G S
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
S D
SD
A
T = 175C
J
1
10
100
1000
1
10
100
1000
V , Drain-to-Source Voltage (V)
D S
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
10s
100s
1 m s
1 0 m s
A
T = 25C
T = 175C
Single Pulse
C
J
0
3
6
9
12
15
0
20
40
60
80
100
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
V = 80V
V = 50V
V = 20V
D S
D S
D S
A
FOR TEST CIRCUIT
SEE FIGURE 13
I = 18A
D
0
1000
2000
3000
1
10
100
C, Capacitance (pF)
D S
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
G S
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
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IRL
540N
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
5.0V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0
5
1 0
1 5
2 0
2 5
3 0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
1 7 5
C
I , Drain Current (Amps)
D
T , Case Temperature (C)
A
0 . 0 1
0 . 1
1
1 0
0 . 0 0 0 0 1
0 . 0 0 0 1
0 . 0 0 1
0 . 0 1
0 . 1
1
t , Rectangular Pulse Duration (sec)
1
thJC
D = 0 . 5 0
0 . 0 1
0 . 0 2
0 . 0 5
0 . 1 0
0 . 2 0
S I N G L E P U L S E
( T H E R M A L R E S P O N S E )
A
Thermal Response (Z )
P
t
2
1
t
D M
N ote s:
1. Duty fac tor D = t / t
2. Pe ak T = P x Z + T
1
2
J
D M
thJ C
C
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