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Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 5.0 V
5.2
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 5.0 V
3.3
A
I
DM
Pulsed Drain Current
21
P
D
@T
C
= 25C
Power Dissipation
50
P
D
@T
A
= 25C
Power Dissipation (PCB Mount)**
3.1
Linear Derating Factor
0.40
Linear Derating Factor (PCB Mount)**
0.025
V
GS
Gate-to-Source Voltage
10
V
E
AS
Single Pulse Avalanche Energy
125
mJ
I
AR
Avalanche Current
5.2
A
E
AR
Repetitive Avalanche Energy
5.0
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
IRL620S
HEXFET
Power MOSFET
PD -9.1218
Revision 0
V
DSS
= 200V
R
DS(on)
= 0.80
I
D
= 5.2A
Absolute Maximum Ratings
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case
--
--
2.5
R
JA
Junction-to-Ambient (PCB Mount)**
--
--
40
C/W
R
JA
Junction-to-Ambient
--
--
62
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
R
DS(on)
Specified at V
GS
=4V & 5V
Fast Switching
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The SMD-220 is a surface-mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface-mount package. The SMD-220 is suitable for
high current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface-mount application.
Description
A
SMD-220
W
W/C
C
** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques, refer
to Application Note AN-994.
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Parameter
Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
200
--
--
V
V
GS
= 0V, ID = 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
--
0.27
--
V/C Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
--
--
0.80
V
GS
= 10.0V, I
D
= 3.1A
--
--
1.0
V
GS
= 4.0V, I
D
= 2.6A
V
GS(th)
Gate Threshold Voltage
1.0
--
2.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
1.2
--
--
S
V
DS
= 50V, I
D
= 3.1A
I
DSS
Drain-to-Source Leakage Current
--
--
25
V
DS
= 200V, V
GS
= 0V
--
--
250
V
DS
= 320V, V
GS
= 0V, T
J
= 125C
I
GSS
Gate-to-Source Forward Leakage
--
--
100
V
GS
= 10V
Gate-to-Source Reverse Leakage
--
--
-100
V
GS
= -10V
Q
g
Total Gate Charge
--
--
16
I
D
= 5.2A
Q
gs
Gate-to-Source Charge
--
--
2.9
nC
V
DS
= 160V
Q
gd
Gate-to-Drain ("Miller") Charge
--
--
9.6
V
GS
= 5.0V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
--
4.2
--
V
DD
= 100V
t
r
Rise Time
--
31
--
I
D
= 5.2A
t
d(off)
Turn-Off Delay Time
--
18
--
R
G
= 9.0
t
f
Fall Time
--
17
--
R
D
= 20
,
See Fig. 10
L
D
Internal Drain Inductance
--
4.5
--
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance
--
7.5
--
from package
and center of
die contact
C
iss
Input Capacitance
--
360
--
V
GS
= 0V
C
oss
Output Capacitance
--
91
--
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
--
27
--
= 1.0MHz, See Fig. 5
IRL620S
Notes:
Parameter
Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
--
--
1.8
V
T
J
= 25C, I
S
= 5.2A, V
GS
= 0V
t
rr
Reverse Recovery Time
--
180
270
ns
T
J
= 25C, I
F
= 5.2A
Q
rr
Reverse RecoveryCharge
--
1.1
1.7
C
di/dt = 100A/s
t
on
Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 50V, starting T
J
= 25C, L = 6.9mH
R
G
= 25
, I
AS
= 5.2A. (See Figure 12)
I
SD
5.2A, di/dt
95A/s, V
DD
V
(BR)DSS
,
T
J
150C
Pulse width
300s; duty cycle
2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
--
--
21
--
--
5.2
A
ns
nA
A
nH
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Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL620S
Fig 1. Typical Output Characteristics,
T
C
= 25
o
C
Fig 2. Typical Output Characteristics,
T
C
= 150
o
C
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
m
p
s
)
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
m
p
s
)
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
m
p
s
)
To Order
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IRL620s
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
v
o
l
t
s
)
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
m
p
s
)
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
m
p
s
)
To Order
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IRL620S
Fig 10a. Switching Time Test Circuit
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
m
p
s
)
To Order
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