www.docs.chipfind.ru
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1
4/22/04
IRL7833
IRL7833S
IRL7833L
HEXFET
Power MOSFET
Notes
through
are on page 12
Applications
Benefits
l
Very Low RDS(on) at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Consumer Use
D
2
Pak
IRL7833S
TO-220AB
IRL7833
TO-262
IRL7833L
V
DSS
R
DS(on)
max
Qg
30V
3.8m
:
32nC
Absolute Maximum Ratings
Parameter
Units
V
DS
Drain-to-Source Voltage
V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
P
D
@T
C
= 25C
Maximum Power Dissipation
g
W
P
D
@T
C
= 100C
Maximum Power Dissipation
g
Linear Derating Factor
W/C
T
J
Operating Junction and
C
T
STG
Storage Temperature Range
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
1.04
R
CS
Case-to-Sink, Flat, Greased Surface
h
0.50
C/W
R
JA
Junction-to-Ambient
h
62
R
JA
Junction-to-Ambient (PCB Mount)
g
40
Max.
150
f
110
f
600
20
30
10 lbf
y
in (1.1N
y
m)
-55 to + 175
140
0.96
72
PD - 94668B
IRL7833/S/L
2
www.irf.com
S
D
G
Static @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage
30
V
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
18
mV/C
R
DS(on)
Static Drain-to-Source On-Resistance
3.1
3.8
m
3.7
4.5
V
GS(th)
Gate Threshold Voltage
1.4
2.3
V
V
GS(th)
/
T
J
Gate Threshold Voltage Coefficient
-11
mV/C
I
DSS
Drain-to-Source Leakage Current
1.0
A
150
I
GSS
Gate-to-Source Forward Leakage
100
nA
Gate-to-Source Reverse Leakage
-100
gfs
Forward Transconductance
150
S
Q
g
Total Gate Charge
32
47
Q
gs1
Pre-Vth Gate-to-Source Charge
8.7
Q
gs2
Post-Vth Gate-to-Source Charge
5.1
nC
Q
gd
Gate-to-Drain Charge
13
Q
godr
Gate Charge Overdrive
5.3
See Fig. 16
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
18
Q
oss
Output Charge
22
nC
t
d(on)
Turn-On Delay Time
18
t
r
Rise Time
50
ns
t
d(off)
Turn-Off Delay Time
21
t
f
Fall Time
6.9
C
iss
Input Capacitance
4170
C
oss
Output Capacitance
950
pF
C
rss
Reverse Transfer Capacitance
470
Avalanche Characteristics
Parameter
Units
E
AS
Single Pulse Avalanche Energy
dh
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
I
S
Continuous Source Current
150
f
(Body Diode)
A
I
SM
Pulsed Source Current
600
(Body Diode)
h
V
SD
Diode Forward Voltage
1.2
V
t
rr
Reverse Recovery Time
42
63
ns
Q
rr
Reverse Recovery Charge
34
51
nC
V
GS
= 20V
V
GS
= -20V
Conditions
14
Max.
560
30
= 1.0MHz
Conditions
V
GS
= 0V, I
D
= 250A
Reference to 25C, I
D
= 1mA
V
GS
= 10V, I
D
= 38A
f
V
DS
= V
GS
, I
D
= 250A
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125C
Clamped Inductive Load
V
DS
= 15V, I
D
= 30A
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
f
I
D
= 26A
V
DS
= 16V
T
J
= 25C, I
F
= 30A, V
DD
= 15V
di/dt = 100A/s
f
T
J
= 25C, I
S
= 30A, V
GS
= 0V
f
showing the
integral reverse
p-n junction diode.
MOSFET symbol
V
GS
= 4.5V, I
D
= 30A
f
V
GS
= 4.5V
Typ.
I
D
= 30A
V
GS
= 0V
V
DS
= 15V
IRL7833/S/L
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3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.7V
20s PULSE WIDTH
Tj = 25C
VGS
TOP
10V
7.0V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM
2.7V
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.7V
20s PULSE WIDTH
Tj = 175C
VGS
TOP
10V
7.0V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM
2.7V
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
ID = 75A
VGS = 10V
2.0
3.0
4.0
5.0
6.0
7.0
8.0
VGS, Gate-to-Source Voltage (V)
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
)
TJ = 25C
TJ = 175C
VDS = 15V
20s PULSE WIDTH
IRL7833/S/L
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VSD, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
I S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
TJ = 25C
TJ = 175C
VGS = 0V
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25C
Tj = 175C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100sec
0
5
10
15
20
25
30
35
40
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 24V
VDS= 15V
ID= 30A
IRL7833/S/L
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
25
50
75
100
125
150
175
0
40
80
120
160
I
,
D
r
ain C
u
rrent
(A)
D
LIMITED BY PACKAGE
T
C
, Case Temperature (C)
-75 -50 -25
0
25
50
75
100 125 150 175
TJ , Temperature ( C )
0.0
0.5
1.0
1.5
2.0
2.5
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
ID = 250A
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
her
m
a
l R
e
s
pons
e
(
Z
)
1
th
JC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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