HEXFET
Power MOSFET
IRLIZ24N
PD - 9.1344
V
DSS
= 55V
R
DS(on)
= 0.06
I
D
= 14A
S
D
G
TO-220 FULLPAK
l
Logic-Level Gate Drive
l
Advanced Process Technology
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
l
Sink to Lead Creepage Dist. = 4.8mm
l
Fully Avalanche Rated
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case
5.8
R
JA
Junction-to-Ambient
65
C/W
Thermal Resistance
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design for which HEXFET Power MOSFETs are
well known, provides the designer with an extremely
efficient device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
14
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
9.9
A
I
DM
Pulsed Drain Current
72
P
D
@T
C
= 25C
Power Dissipation
26
W
Linear Derating Factor
0.17
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
68
mJ
I
AR
Avalanche Current
11
A
E
AR
Repetitive Avalanche Current
4.5
mJ
dv/dt
Peak Diode Recovery dv/dt
4.6
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.
10 lbfin (1.1Nm)
Absolute Maximum Ratings
PRELIMINARY
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IRLIZ24N
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.061
V/C
Reference to 25C, I
D
= 1mA
0.060
V
GS
= 10V, I
D
= 8.4A
0.075
V
GS
= 5.0V, I
D
= 8.4A
0.105
V
GS
= 4.0V, I
D
= 7.0A
V
GS(th)
Gate Threshold Voltage
1.0
2.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
8.3
S
V
DS
= 25V, I
D
= 11A
25
V
DS
= 55V, V
GS
= 0V
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
V
GS
= -20V
Q
g
Total Gate Charge
15
I
D
= 11A
Q
gs
Gate-to-Source Charge
3.7
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
8.5
V
GS
= 5.0V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
7.1
V
DD
= 28V
t
r
Rise Time
74
I
D
= 11A
t
d(off)
Turn-Off Delay Time
20
R
G
= 12
,
V
GS
= 5.0V
t
f
Fall Time
29
R
D
= 2.4
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
480
V
GS
= 0V
C
oss
Output Capacitance
130
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
61
= 1.0MHz, See Fig. 5
C
Drain to Sink Capacitance
12
= 1.0MHz
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
S
D
G
I
DSS
Drain-to-Source Leakage Current
I
GSS
L
S
Internal Source Inductance
7.5
L
D
Internal Drain Inductance
4.5
A
nA
ns
nH
R
DS(on)
Static Drain-to-Source On-Resistance
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Uses IRLZ24N data and test conditions
V
DD
= 25V, starting T
J
= 25C, L = 790H
R
G
= 25
, I
AS
= 11A. (See Figure 12)
Pulse width
300s; duty cycle
2%.
t=60s, =60Hz
I
SD
11A, di/dt
290A/s, V
DD
V
(BR)DSS
,
T
J
175C
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 8.4A, V
GS
= 0V
t
rr
Reverse Recovery Time
60
90
ns
T
J
= 25C, I
F
= 11A
Q
rr
Reverse RecoveryCharge
130
200
nC
di/dt = 100A/s
Source-Drain Ratings and Characteristics
A
72
14
S
D
G
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IRLIZ24N
Fig 1. Typical Output Characteristics,
T
J
= 25
o
C
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics,
T
J
= 175
o
C
0.1
1
10
100
0.1
1
10
100
I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
D
V , Drain-to-Source Voltage (V)
DS
A
20s PULSE WIDTH
T = 25C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
0.1
1
10
100
0.1
1
10
100
I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
D
V , Drain-to-Source Voltage (V)
DS
A
20s PULSE WIDTH
T = 175C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
J
0.1
1
1 0
1 0 0
2
3
4
5
6
7
8
9
1 0
T = 25C
J
GS
V , Gate-to-Source Voltage (V)
D
I
, Dr
ain-
to-S
ourc
e C
urre
nt (A
)
T = 175C
J
A
V = 15V
20s PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20
0
2 0
4 0
6 0
8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , Junction Temperature (C)
R
,
D
r
a
i
n
-
to
-
S
o
u
r
c
e
On
R
e
s
i
s
t
a
n
c
e
D
S
(
on)
(N
o
r
ma
l
i
z
e
d
)
V = 10V
GS
A
I = 18A
D
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Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
IRLIZ24N
0
200
400
600
800
1
10
100
C,
Ca
p
a
c
it
a
n
c
e
(
p
F
)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
3
6
9
12
15
0
4
8
12
16
20
Q , Total Gate Charge (nC)
G
V
, Ga
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 13
V = 44V
V = 28V
I = 11A
DS
DS
D
1
1 0
1 0 0
0.4
0.8
1.2
1.6
2.0
T = 25C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I
,
Re
v
e
r
s
e
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
SD
SD
A
T = 175C
J
1
10
100
1000
1
10
100
V , Drain-to-Source Voltage (V)
DS
I
, D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
10s
100s
1ms
10ms
A
T = 25C
T = 175C
Single Pulse
C
J
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Fig 9. Maximum Drain Current Vs.
Case Temperature
IRLIZ24N
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
5.0V
+
-
V
DD
0
2
4
6
8
1 0
1 2
1 4
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
1 7 5
C
I
,
D
r
a
i
n
C
u
rre
n
t
(A
mp
s
)
D
T , Case Temperature (C)
A
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
th
J
C
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
A
T
h
e
rma
l
R
e
s
p
o
n
s
e
(
Z
)
P
t2
1
t
D M
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1
2
J
DM
thJC
C
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