IRLL3303
HEXFET
Power MOSFET
S
D
G
V
DSS
= 30V
R
DS(on)
= 0.031
I
D
= 4.6A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
1/22/99
Description
l
Surface Mount
l
Dynamic dv/dt Rating
l
Logic-Level Gate Drive
l
Fast Switching
l
Ease of Paralleling
l
Advanced Process Technology
l
Ultra Low On-Resistance
S O T -2 2 3
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
Parameter
Typ.
Max.
Units
R
JA
Junction-to-Amb. (PCB Mount, steady state)*
93
120
R
JA
Junction-to-Amb. (PCB Mount, steady state)**
48
60
Thermal Resistance
C/W
Parameter
Max.
Units
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 10V**
6.5
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 10V*
4.6
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 10V*
3.7
I
DM
Pulsed Drain Current
37
P
D
@T
A
= 25C
Power Dissipation (PCB Mount)**
2.1
W
P
D
@T
A
= 25C
Power Dissipation (PCB Mount)*
1.0
W
Linear Derating Factor (PCB Mount)*
8.3
mW/C
V
GS
Gate-to-Source Voltage
16
V
E
AS
Single Pulse Avalanche Energy
140
mJ
I
AR
Avalanche Current
4.6
A
E
AR
Repetitive Avalanche Energy
0.10
mJ
dv/dt
Peak Diode Recovery dv/dt
1.3
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
Absolute Maximum Ratings
A
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1
PD- 91379C
IRLL3303
2
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Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
30
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.034
V/C
Reference to 25C, I
D
= 1mA
0.031
V
GS
= 10V, I
D
= 4.6A
0.045
V
GS
= 4.5V, I
D
= 2.3A
V
GS(th)
Gate Threshold Voltage
1.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
5.5
S
V
DS
= 10V, I
D
= 2.3A
25
V
DS
= 30V, V
GS
= 0V
250
V
DS
= 24V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
-100
V
GS
= -16V
Gate-to-Source Reverse Leakage
100
V
GS
= 16V
Q
g
Total Gate Charge
34
50
I
D
= 4.6A
Q
gs
Gate-to-Source Charge
4.4
6.5
nC
V
DS
= 24V
Q
gd
Gate-to-Drain ("Miller") Charge
10
16
V
GS
= 10V, See Fig. 6 and 9
t
d(on)
Turn-On Delay Time
7.2
V
DD
= 15V
t
r
Rise Time
22
I
D
= 4.6A
t
d(off)
Turn-Off Delay Time
33
R
G
= 6.2
t
f
Fall Time
28
R
D
= 3.2
,
See Fig. 10
C
iss
Input Capacitance
840
V
GS
= 0V
C
oss
Output Capacitance
340
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
170
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
A
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 4.6A, V
GS
= 0V
t
rr
Reverse Recovery Time
65
98
ns
T
J
= 25C, I
F
= 4.6A
Q
rr
Reverse RecoveryCharge
160
240
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
37
0.91
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
4.6A, di/dt
110A/s, V
DD
V
(BR)DSS
,
T
J
150C
Notes:
V
DD
= 15V, starting T
J
= 25C, L = 13mH
R
G
= 25
, I
AS
= 4.6A. (See Figure 12)
Pulse width
300s; duty cycle
2%.
Rev. #
Parameters
Old spec.
New spec.
Comments
Revision Date
1
V
GS(th)
(Max.)
2.5V
No spec.
Removed V
GS(th)
(Max). Specification
11/1/96
1
V
GS
(Max.)
20
16
Decrease V
GS
(Max). Specification
11/1/96
Specification changes
IRLL3303
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3
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1
1 0
1 0 0
0 . 1
1
1 0
20 s P U LS E W ID TH
T = 2 5C
A
J
D S
V , D ra in -to -S o urc e V o ltag e (V )
3 .0V
VGS
TO P 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOT TOM 3.0V
DI
,
D
r
ai
n-
t
o
-
S
o
u
r
c
e C
u
r
r
ent
(
A
)
1
1 0
1 0 0
0 . 1
1
1 0
A
D S
V , D rain-to-S ource V oltage (V )
DI
,
D
r
a
i
n-
t
o
-
S
our
c
e
C
u
r
r
en
t
(
A
)
2 0 s P U L S E W ID T H
T = 15 0C
J
3 .0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1
1 0
1 0 0
3 . 0
3 . 5
4 . 0
4 . 5
5 . 0
5 . 5
T = 2 5 C
T = 1 5 0 C
J
J
G S
V , G a te -to -S o u rc e V o lta g e (V )
D
I
,
D
r
a
i
n
-
t
o
-
S
o
u
rc
e
C
u
rre
n
t
(A
)
A
V = 1 0 V
2 0 s P U L S E W ID T H
D S
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
J
T , Junction T em perature (C )
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
ta
n
c
e
D
S
(
on)
(N
o
r
m
a
l
i
z
e
d
)
V = 10 V
G S
A
I = 4 .6A
D
IRLL3303
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1 2 0 0
1 4 0 0
1 6 0 0
1
1 0
1 0 0
C
,
Cap
ac
i
t
a
n
c
e
(
p
F
)
D S
V , D rain-to-S ourc e V oltage (V )
A
V = 0V , f = 1 M H z
C = C + C , C S H O R TE D
C = C
C = C + C
G S
iss g s g d d s
rs s g d
o ss ds g d
C
is s
C
os s
C
rs s
0
4
8
1 2
1 6
2 0
0
1 0
2 0
3 0
4 0
5 0
Q , T ota l G ate C h a rg e (n C )
G
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
GS
A
F O R TE S T C IR C U IT
S E E F IG U R E 9
V = 2 4V
V = 1 5V
D S
D S
I = 4.6 A
D
1
1 0
1 0 0
0.1
1
1 0
1 0 0
V , D rain-to-S ource V oltage (V )
D S
I
,
Dr
ai
n
C
u
r
r
e
nt
(
A
)
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D
D S (o n)
T = 25 C
T = 15 0C
S ing le P u ls e
1 0 0 s
1 m s
1 0 m s
A
A
J
1
1 0
1 0 0
0 . 4
0 . 6
0 . 8
1 . 0
1 . 2
1 . 4
T = 2 5C
T = 1 5 0C
J
J
V = 0V
G S
V , S o urc e-to -D ra in V o lta ge (V )
I , R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
S D
SD
A
IRLL3303
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5
+
-
V
DS
10V
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
10V
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
Fig 9a. Basic Gate Charge Waveform
Fig 9b. Gate Charge Test Circuit
0 . 0 1
0 . 1
1
1 0
1 0 0
1 0 0 0
0 . 0 0 0 0 1
0 . 0 0 0 1
0 . 0 0 1
0 . 0 1
0 . 1
1
1 0
1 0 0
1 0 0 0
1 0 0 0 0
t , R e cta n g u la r P u lse D u ra tio n (se c )
1
D = 0 .5 0
0 .01
0 .02
0 .0 5
0 .1 0
0 .2 0
S IN G L E P U L S E
( T H E R M A L R E S P O N S E )
A
T
her
m
a
l
R
e
s
pons
e
(
Z
)
th
J
A
P
t 2
1
t
D M
N o te s :
1 . D u ty fac t or D = t / t
2 . P e a k T = P x Z + T
1
2
J
D M
th J A
A
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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