Parameter
Typ.
Max.
Units
R
JA
Maximum Junction-to-Ambient
75
100
C/W
IRLML6402
HEXFET
Power MOSFET
These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in battery and
load management.
A thermally enhanced large pad leadframe has been incorporated
into the standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This package,
dubbed the Micro3
TM
, is ideal for applications where printed
circuit board space is at a premium. The low profile (<1.1mm)
of the Micro3 allows it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
The thermal resistance and power dissipation are the best
available.
Thermal Resistance
V
DSS
= -20V
R
DS(on)
= 0.065
l
Ultra Low On-Resistance
l
P-Channel MOSFET
l
SOT-23 Footprint
l
Low Profile (<1.1mm)
l
Available in Tape and Reel
l
Fast Switching
Description
8/13/99
www.irf.com
1
S
D
G
PD- 93755
Parameter
Max.
Units
V
DS
Drain- Source Voltage
-20
V
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ -4.5V
-3.7
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ -4.5V
-2.2
A
I
DM
Pulsed Drain Current
-22
P
D
@T
A
= 25C
Power Dissipation
1.3
P
D
@T
A
= 70C
Power Dissipation
0.8
Linear Derating Factor
0.01
W/C
E
AS
Single Pulse Avalanche Energy
11
mJ
V
GS
Gate-to-Source Voltage
12
V
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
Absolute Maximum Ratings
W
Micro3
TM
IRLML6402
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.2
V
T
J
= 25C, I
S
= -1.0A, V
GS
= 0V
t
rr
Reverse Recovery Time
29
43
ns
T
J
= 25C, I
F
= -1.0A
Q
rr
Reverse RecoveryCharge
11
17
nC
di/dt = -100A/s
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width
300s; duty cycle
2%.
Source-Drain Ratings and Characteristics
-1.3
-22
A
S
D
G
** For recommended footprint and soldering techniques refer to application note #AN-994.
Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
Starting T
J
= 25C, L = 1.65mH
R
G
= 25
, I
AS
= -3.7A.
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-20
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
-0.009
V/C
Reference to 25C, I
D
= -1mA
0.050 0.065
V
GS
= -4.5V, I
D
= -3.7A
0.080 0.135
V
GS
= -2.5V, I
D
= -3.1A
V
GS(th)
Gate Threshold Voltage
-0.40 -0.55 -0.95
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
6.0
S
V
DS
= -10V, I
D
= -3.7A
-1.0
V
DS
= -20V, V
GS
= 0V
-25
V
DS
= -20V, V
GS
= 0V, T
J
= 70C
Gate-to-Source Forward Leakage
-100
V
GS
= -12V
Gate-to-Source Reverse Leakage
100
V
GS
= 12V
Q
g
Total Gate Charge
8.0
12
I
D
= -3.7A
Q
gs
Gate-to-Source Charge
1.2
1.8
nC
V
DS
= -10V
Q
gd
Gate-to-Drain ("Miller") Charge
2.8
4.2
V
GS
= -5.0V
t
d(on)
Turn-On Delay Time
350
V
DD
= -10V
t
r
Rise Time
48
I
D
= -3.7A
t
d(off)
Turn-Off Delay Time
588
R
G
= 89
t
f
Fall Time
381
R
D
= 2.7
C
iss
Input Capacitance
633
V
GS
= 0V
C
oss
Output Capacitance
145
pF
V
DS
= -10V
C
rss
Reverse Transfer Capacitance
110
= 1.0MHz
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
A
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
IRLML6402
www.irf.com
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
-2.25V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-2.25V
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
-2.25V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-2.25V
10
100
2.0
3.0
4.0
5.0
6.0
7.0
8.0
V = -15V
20s PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
-4.5V
-3.7A
IRLML6402
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
1
10
100
VDS, Drain-to-Source Voltage (V)
0
200
400
600
800
1000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
3
6
9
12
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-3.7A
V
= -10V
DS
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
IRLML6402
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
25
50
75
100
125
150
0.0
1.0
2.0
3.0
4.0
T , Case Temperature ( C)
-I , Drain Current (A)
C
D
25
50
75
100
125
150
0
5
10
15
20
25
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
ID
TOP
BOTTOM
-1.7A
-3.0A
-3.7A
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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