IRLMS1902
V
DSS
= 20V
R
DS(on)
= 0.10
HEXFET
Power MOSFET
Fifth Generation HEXFET
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET
power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micro6
package with its customized leadframe
produces a HEXFET
power MOSFET with R
DS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R
DS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
Description
3/18/04
l
Generation V Technology
l
Micro6 Package Style
l
Ultra Low
R
DS(on)
l
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Max.
Units
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 4.5V
3.2
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 4.5V
2.6
A
I
DM
Pulsed Drain Current
18
P
D
@T
A
= 25C
Power Dissipation
1.7
W
Linear Derating Factor
13
mW/C
V
GS
Gate-to-Source Voltage
12
V
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
Parameter
Min.
Typ. Max Units
R
JA
Maximum Junction-to-Ambient
75 C/W
Thermal Resistance Ratings
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1
Micro6
PD - 91540C
Top View
1
2
D
G
A
D
D
D
S
3
4
5
6
IRLMS1902
2
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Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
20
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
0.032
V/C Reference to 25C, I
D
= 1mA
0.10
V
GS
= 4.5V, I
D
= 2.2A
0.17
V
GS
= 2.7V, I
D
= 1.1A
V
GS(th)
Gate Threshold Voltage
0.70
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
3.2
S
V
DS
= 10V, I
D
= 1.1A
1.0
V
DS
= 16V, V
GS
= 0V
25
V
DS
= 16V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
100
V
GS
= 12V
Gate-to-Source Reverse Leakage
-100
V
GS
= -12V
Q
g
Total Gate Charge
4.7
7.0
I
D
= 2.2A
Q
gs
Gate-to-Source Charge
0.97 1.5
nC
V
DS
= 16V
Q
gd
Gate-to-Drain ("Miller") Charge
1.8
2.6
V
GS
= 4.5V, See Fig. 6 and 9
t
d(on)
Turn-On Delay Time
7.0
V
DD
= 10V
t
r
Rise Time
11
I
D
= 2.2A
t
d(off)
Turn-Off Delay Time
12
R
G
= 6.0
t
f
Fall Time
4.0
R
D
= 4.4, See Fig. 10
C
iss
Input Capacitance
300
V
GS
= 0V
C
oss
Output Capacitance
120
pF
V
DS
= 15V
C
rss
Reverse Transfer Capacitance
50
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
A
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.2
V
T
J
= 25C, I
S
= 2.2A, V
GS
= 0V
t
rr
Reverse Recovery Time
40
60
ns
T
J
= 25C, I
F
= 2.2A
Q
rr
Reverse RecoveryCharge
37
55
nC
di/dt = 100A/s
Source-Drain Ratings and Characteristics
A
18
1.7
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
2.2A, di/dt 110A/s, V
DD
V
(BR)DSS
,
T
J
150C
Notes:
Pulse width 300s; duty cycle 2%.
Surface mounted on FR-4 board, t 5sec.
IRLMS1902
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3
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
0.1
1
10
100
0.1
1
10
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
1.75V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
0.1
1
10
100
0.1
1
10
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
1.75V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
0.1
1
10
100
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V = 10V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 150 C
J
T = 25 C
J
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature( C)
R
, D
r
ain-to-S
ource O
n
R
e
sistance
(N
orm
a
lized)
J
DS(on)
V
=
I =
GS
D
4.5V
2.2A
1.75V
1.75V
IRLMS1902
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
100
200
300
400
500
600
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
C
iss
C
oss
C
rss
0
2
4
6
8
0
2
4
6
8
10
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
9
2.2A
V
= 16V
DS
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
V ,Source-to-Drain Voltage (V)
I
,
Rever
s
e Dr
ai
n Cur
r
ent
(
A
)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
0.1
1
10
100
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
100us
1ms
10ms
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
+
-
V
DS
4.5V
Pulse Width 1 s
Duty Factor 0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
4.5V
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
Fig 9a. Basic Gate Charge Waveform
Fig 9b. Gate Charge Test Circuit
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
hermal
Response
(Z
)
1
th
J
A
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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