Parameter
Max.
Units
V
DS
Drain- Source Voltage
20
V
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 4.5V
6.5
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 4.5V
5.2
A
I
DM
Pulsed Drain Current
20
P
D
@T
A
= 25C
Power Dissipation
2.0
P
D
@T
A
= 70C
Power Dissipation
1.3
Linear Derating Factor
0.016
W/C
V
GS
Gate-to-Source Voltage
12
V
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
01/13/03
Parameter
Max.
Units
R
JA
Maximum Junction-to-Ambient
62.5
C/W
Thermal Resistance
Absolute Maximum Ratings
W
www.irf.com
1
IRLMS2002
HEXFET
Power MOSFET
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The Micro6
package with its customized leadframe
produces a HEXFET
power MOSFET with R
DS(on)
60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and R
DS(on)
reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
V
DSS
= 20V
R
DS(on)
= 0.030
Description
l
Ultra Low On-Resistance
l
N-Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
2.5V Rated
Top View
1
2
D
G
A
D
D
D
S
3
4
5
6
Micro6
PD- 93758D
IRLMS2002
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
20
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.016
V/C
Reference to 25C, I
D
= 1mA
0.030
V
GS
= 4.5V, I
D
= 6.5A
0.045
V
GS
= 2.5V, I
D
= 5.2A
V
GS(th)
Gate Threshold Voltage
0.60
1.2
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
13
S
V
DS
= 10V, I
D
= 6.5A
1.0
V
DS
= 16V, V
GS
= 0V
25
V
DS
= 16V, V
GS
= 0V, T
J
= 70C
Gate-to-Source Forward Leakage
-100
V
GS
= -12V
Gate-to-Source Reverse Leakage
100
V
GS
= 12V
Q
g
Total Gate Charge
15
22
I
D
= 6.5A
Q
gs
Gate-to-Source Charge
2.2
3.3
nC
V
DS
= 10V
Q
gd
Gate-to-Drain ("Miller") Charge
3.5
5.3
V
GS
= 5.0V
t
d(on)
Turn-On Delay Time
8.5
V
DD
= 10V
t
r
Rise Time
11
I
D
= 1.0A
t
d(off)
Turn-Off Delay Time
36
R
G
= 6.0
t
f
Fall Time
16
R
D
= 10
C
iss
Input Capacitance
1310
V
GS
= 0V
C
oss
Output Capacitance
150
pF
V
DS
= 15V
C
rss
Reverse Transfer Capacitance
36
= 1.0MHz
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
A
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.2
V
T
J
= 25C, I
S
= 1.7A, V
GS
= 0V
t
rr
Reverse Recovery Time
19
29
ns
T
J
= 25C, I
F
= 1.7A
Q
rr
Reverse Recovery Charge
13
20
nC
di/dt = 100A/s
Source-Drain Ratings and Characteristics
A
20
2.0
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
Pulse width
400s; duty cycle
2%.
Surface mounted on FR-4 board, t
5sec.
S
D
G
IRLMS2002
www.irf.com
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
D
S
(
on)
V
=
I =
GS
D
4.5V
5.3A
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
1.50V
V , Drain-to-Source Voltage (V)
I , D
r
ain-to-Source C
u
rrent (A)
DS
D
1.50V
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
1.50V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
1
10
100
1.5
2.0
2.5
3.0
3.5
V = 15V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
IRLMS2002
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
4
8
12
16
20
24
0
2
4
6
8
10
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
5.3A
V
= 10V
DS
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
1
10
100
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
1ms
10ms
1
10
100
0
400
800
1200
1600
2000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
C
iss
C
oss
C
rss
6.5A
IRLMS2002
www.irf.com
5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Typical Vgs(th) Variance Vs.
Juction Temperature
25
50
75
100
125
150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
T , Case Temperature ( C)
I , Drain Current (A)
C
D
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Ther
m
a
l
R
e
sponse
(Z
)
1
th
JA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
-50
-25
0
25
50
75
100
125
150
TJ , Temperature ( C )
-0.40
-0.30
-0.20
-0.10
0.00
0.10
0.20
V
G
S
(
t
h
)
,
V
a
r
i
a
c
e
(
V
)
Id = 250A
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