IRLMS6702
V
DSS
= -20V
R
DS(on)
= 0.20
HEXFET
Power MOSFET
Fifth Generation HEXFET
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET
power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micro6
package with its customized leadframe
produces a HEXFET
power MOSFET with R
DS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R
DS(on)
reduction enables a current-handling increase of
nearly 300% compared to the SOT-23.
Description
3/18/04
l
Generation V Technology
l
Micro6 Package Style
l
Ultra Low
R
DS(on)
l
P-Channel MOSFET
Absolute Maximum Ratings
Parameter
Max.
Units
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ -4.5V
-2.4
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ -4.5V
-1.9
A
I
DM
Pulsed Drain Current
-13
P
D
@T
A
= 25C
Power Dissipation
1.7
W
Linear Derating Factor
13
mW/C
V
GS
Gate-to-Source Voltage
12
V
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
Top View
1
2
D
G
A
D
D
D
S
3
4
5
6
Parameter Min. Typ. Max Units
R
JA
Maximum Junction-to-Ambient
75 C/W
Thermal Resistance Ratings
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1
Micro6
PD - 91414C
IRLMS6702
2
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Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-20
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
-0.005
V/C Reference to 25C, I
D
= -1mA
0.200
V
GS
= -4.5V, I
D
= -1.6A
0.375
V
GS
= -2.7V, I
D
= -0.80A
V
GS(th)
Gate Threshold Voltage
-0.70
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
1.5
S
V
DS
= -10V, I
D
= -0.80A
-1.0
V
DS
= -16V, V
GS
= 0V
-25
V
DS
= -16V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
-100
V
GS
= -12V
Gate-to-Source Reverse Leakage
100
V
GS
= 12V
Q
g
Total Gate Charge
5.8
8.8
I
D
= -1.6A
Q
gs
Gate-to-Source Charge
1.8
2.6
nC
V
DS
= -16V
Q
gd
Gate-to-Drain ("Miller") Charge
2.1
3.1
V
GS
= -4.5V, See Fig. 6 and 9
t
d(on)
Turn-On Delay Time
13
V
DD
= -10V
t
r
Rise Time
20
I
D
= -1.6A
t
d(off)
Turn-Off Delay Time
21
R
G
= 6.0
t
f
Fall Time
18
R
D
= 6.1, See Fig. 10
C
iss
Input Capacitance
210
V
GS
= 0V
C
oss
Output Capacitance
130
pF
V
DS
= -15V
C
rss
Reverse Transfer Capacitance
73
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
A
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.2
V
T
J
= 25C, I
S
= -1.6A, V
GS
= 0V
t
rr
Reverse Recovery Time
25
37
ns
T
J
= 25C, I
F
= -1.6A
Q
rr
Reverse RecoveryCharge
15
22
nC
di/dt = -100A/s
Source-Drain Ratings and Characteristics
A
-13
-1.7
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
-1.6A, di/dt -100A/s, V
DD
V
(BR)DSS
,
T
J
150C
Notes:
Pulse width 300s; duty cycle 2%.
Surface mounted on FR-4 board, t 5sec.
IRLMS6702
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3
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
0.1
1
10
100
0.1
1
10
D
DS
20s PULSE WIDTH
T = 25C
A
-I , D
r
a
i
n
-
to
-
S
o
u
rc
e
C
u
rr
e
n
t (A
)
-V , Drain-to-Source Voltage (V)
J
-1.75V
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM -1.75V
0.1
1
10
100
0.1
1
10
D
DS
20s PULSE WIDTH
T = 150C
A
-I , D
r
a
i
n
-
to
-S
o
u
rce
C
u
rren
t
(A
)
-V , Drain-to-Source Voltage (V)
J
-1.75V
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM -1.75V
0.1
1
10
100
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
T = 25C
T = 150C
J
J
GS
D
A
-I
,
Dra
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A)
-V , Gate-to-Source Voltage (V)
V = -10V
20s PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60
-40
-20
0
20
40
60
80
100 120 140 160
J
T , Junction Temperature (C)
R
, D
r
a
i
n
-
to
-
S
o
u
rc
e
O
n
R
e
s
i
s
t
a
n
c
e
DS
(
on)
(N
o
r
m
a
l
i
ze
d)
A
I = -1.6A
V = -4.5V
D
GS
IRLMS6702
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
100
200
300
400
1
10
100
C
,
C
a
p
a
c
i
ta
n
c
e
(p
F
)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
0
2
4
6
8
10
G
GS
A
-V
, G
a
te
-to
-
S
o
u
r
c
e
V
o
lta
g
e
(V
)
Q , Total Gate Charge (nC)
I = -1.6A
V = -16V
FOR TEST CIRCUIT
SEE FIGURE 9
D
DS
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
T = 25C
T = 150C
J
J
V = 0V
GS
SD
SD
A
-
I
, R
e
v
e
rs
e
D
r
a
i
n
C
u
rre
n
t
(
A
)
-V , Source-to-Drain Voltage (V)
0.1
1
10
100
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 25C
T = 150C
Single Pulse
A
-I , D
r
a
i
n C
u
rre
nt (A
)
-V , Drain-to-Source Voltage (V)
DS
D
A
J
100s
1ms
10ms
IRLMS6702
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5
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
Fig 9a. Basic Gate Charge Waveform
Fig 9b. Gate Charge Test Circuit
V
DS
-4.5V
Pulse Width 1 s
Duty Factor 0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
Q
G
Q
GS
Q
GD
V
G
Charge
-4.5V
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
D.U.T.
V
DS
I
D
I
G
-3mA
V
GS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Ther
m
a
l
R
e
sponse
(
Z
)
1
th
J
A
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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