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Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V (Silicon limited)
61
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V (See Fig.9)
43
A
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V (Package limited)
30
I
DM
Pulsed Drain Current
240
P
D
@T
C
= 25C
Power Dissipation
120
W
Linear Derating Factor
0.77
W/C
V
GS
Gate-to-Source Voltage
16
V
E
AS
Single Pulse Avalanche Energy
200
mJ
E
AS
(6 sigma)
Single Pulse Avalanche Energy Tested Value
600
I
AR
Avalanche Current
See Fig.12a, 12b, 15, 16
A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
IRLR3915
IRLU3915
HEXFET
Power MOSFET
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
1.3
R
JA
Junction-to-Ambient (PCB mount)
50
C/W
R
JA
Junction-to-Ambient
110
Thermal Resistance
V
DSS
= 55V
R
DS(on)
= 14m
I
D
= 30A
09/06/02
www.irf.com
1
AUTOMOTIVE MOSFET
PD - 94543
HEXFET(R) is a registered trademark of International Rectifier.
Description
Specifically designed for Automotive applications,
this HEXFET Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this product are a 175C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
S
D
G
Features
Advanced Process Technology
Ultra Low On-Resistance
175C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
D-Pak
IRLR3915
I-Pak
IRLU3915
IRLR/U3915
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 30A, V
GS
= 0V
t
rr
Reverse Recovery Time
62
93
ns
T
J
= 25C, I
F
= 30A, V
DD
= 25xjkl V
Q
rr
Reverse Recovery Charge
110
170
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.057
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
12
14
V
GS
= 10V, I
D
= 30A
14
17
V
GS
= 5.0V, I
D
= 26A
V
GS(th)
Gate Threshold Voltage
1.0
3.0
V
V
DS
= 10V, I
D
= 250A
g
fs
Forward Transconductance
42
S
V
DS
= 25V, I
D
= 30A
20
A
V
DS
= 55V, V
GS
= 0V
250
V
DS
= 55V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
200
V
GS
= 16V
Gate-to-Source Reverse Leakage
-200
nA
V
GS
= -16V
Q
g
Total Gate Charge
61
92
I
D
= 30A
Q
gs
Gate-to-Source Charge
9.0
14
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
17
25
V
GS
= 10V
t
d(on)
Turn-On Delay Time
7.4
V
DD
= 28V
t
r
Rise Time
51
I
D
= 30A
t
d(off)
Turn-Off Delay Time
83
R
G
= 8.5
t
f
Fall Time
100
V
GS
= 10V
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
1870
V
GS
= 0V
C
oss
Output Capacitance
390
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
74
pF
= 1.0MHz, See Fig. 5
C
oss
Output Capacitance
2380
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
290
V
GS
= 0V, V
DS
= 44V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
540
V
GS
= 0V, V
DS
= 0V to 44V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
S
D
G
Source-Drain Ratings and Characteristics
61
240
A
m
IRLR/U3915
www.irf.com
3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
100
1000
10000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.0V
20s PULSE WIDTH
Tj = 25C
VGS
TOP
15V
10V
5.0V
3.0V
2.7V
2.5V
2.25V
BOTTOM
2.0V
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.0V
20s PULSE WIDTH
Tj = 175C
VGS
TOP
15V
10V
5.0V
3.0V
2.7V
2.5V
2.25V
BOTTOM
2.0V
1.0
3.0
5.0
7.0
9.0
11.0
13.0
15.0
VGS, Gate-to-Source Voltage (V)
0.10
1.00
10.00
100.00
1000.00
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
)
TJ = 25C
TJ = 175C
VDS = 25V
20s PULSE WIDTH
Fig 4. Typical Forward Transconductance
vs. Drain Current
0
10
20
30
40
50
60
ID,Drain-to-Source Current (A)
0
10
20
30
40
50
60
70
G
f
s
,
F
o
r
w
a
r
d
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
TJ = 25C
TJ = 175C
IRLR/U3915
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
10
20
30
40
50
60
70
0
2
4
6
8
10
12
Q , Total Gate Charge (nC)
V ,
Gat
e
-t
o-Sourc
e
Volt
age (V)
G
GS
I
=
D
30A
V
= 11V
DS
V
= 27V
DS
V
= 44V
DS
0.1
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
V ,Source-to-Drain Voltage (V)
I
,
R
e
v
e
rs
e D
r
ai
n C
u
rrent
(A)
SD
SD
V = 0 V
GS
T = 175 C
J
T = 25 C
J
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25C
Tj = 175C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100sec
IRLR/U3915
www.irf.com
5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
T , Case Temperature ( C)
I
,
D
r
ai
n C
u
r
r
ent
(
A
)
C
D
LIMITED BY PACKAGE
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
her
m
a
l
Res
pons
e
(
Z
)
1
th
JC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10. Normalized On-Resistance
vs. Temperature
-60
-40
-20
0
20
40
60
80
100 120
140
160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature
( C)
R
, D
r
a
i
n
-
to
-
S
o
u
r
ce
O
n
R
e
si
sta
n
ce
(N
orm
a
liz
ed)
J
DS
(
on)
V
=
I
=
GS
D
10V
61A
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