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N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high current
applications
100% R
G
Tested
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRLR8103V has been optimized for all parameters
that are critical in synchronous buck converters including
R
DS(on)
, gate charge and Cdv/dt-induced turn-on immunity.
The IRLR8103V offers an extremely low combination of
Q
sw
& R
DS(on)
for reduced losses in both control and
synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
DEVICE CHARACTERISTICS
10/22/04
D-Pak
IRLR8103V
www.irf.com
1
S
D
G
IRLR8103V
R
DS(on)
7.9 m
Q
G
27 nC
Q
SW
12 nC
Q
OSS
29nC
Absolute Maximum Ratings
Symbol
Units
V
DS
V
GS
Continuous Drain or Source Current TC = 25C
(V
GS
> 10V)
TC= 90C
I
DM
TC = 25C
TC = 90C
T
J
, T
STG
C
I
S
I
SM
Thermal Resistance
Symbol
Typ.
Max.
Units
R
JA
50
R
JC
1.09
C/W
A
V
A
I
D
P
D
W
IRLR8103V
91
363
30
20
63
91
363
115
-55 to 150
60
Power Dissipation
e
Parameter
Maximum Junction-to-Ambient
eh
Maximum Junction-to-Case
h
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Parameter
Drain-Source Voltage
Gate-Source Voltage
Pulsed Drain Current
PD-94021C
www.irf.com
2
IRLR8103V
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
400 s; duty cycle
2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Q
oss
Typical values of R
DS
(on) measured at V
GS
= 4.5V, Q
G
, Q
SW
and Q
OSS
measured at V
GS
= 5.0V, I
F
= 15A.
R
is measured at T
J
approximately 90C
Electrical Characteristics
Parameter
Symbol Min Typ Max Units
Drain-to-Source Breakdown Voltage
BV
DSS
30
V
Static Drain-Source
R
DS(on)
6.9
9.0
On-Resistance
7.9
10.5
Gate Threshold Voltage
V
GS(th)
1.0
3.0
V
Drain-to-Source Leakage Current
I
DSS
50
A
20
100
Gate-Source Leakage Current
I
GSS
100
nA
Total Gate Charge, Control FET
Q
G
27
Total Gate Charge, Synch FET
Q
G
23
Pre-Vth Gate-Source Charge
Q
GS1
4.7
Post-Vth Gate-Source Charge
Q
GS2
2.0
Gate to Drain Charge
Q
GD
9.7
Switch Charge (Q
gs2
+ Q
gd
)
Q
SW
12
Output Charge
Q
OSS
29
Gate Resistance
R
G
0.8
3.1
Turn-On Delay Time
t
d(on)
10
Rise Time
t
r
9
Turn-Off Delay Time
t
d(off)
24
Fall Time
t
f
18
Input Capacitance
C
iss
2672
Output Capacitance
C
oss
1064
Reverse Transfer Capacitance
C
rss
109
Source-Drain Rating & Characteristics
Parameter
Symbol Min Typ Max Units
Diode Forward Voltage
V
SD
0.9
1.3
V
Reverse Recovery Charge
f
Q
rr
103
nC
Reverse Recovery Charge
Q
rr(s)
96
nC
(with Parallel Schottky)
f
V
GS
= 5V, I
D
= 15A, V
DS
= 16V
V
DS
= 24V, V
GS
= 0
V
DD
= 16V
V
DS
= 24V, V
GS
= 0, T
J
= 100C
Conditions
V
GS
= 0V, I
D
= 250A
V
GS
= 10V, I
D
= 15A
d
Conditions
di/dt = 700A/s , (with 10BQ040)
V
DS
= 16V, V
GS
= 0V, I
F
= 15A
di/dt ~ 700A/s
V
DS
= 16V, V
GS
= 0V, I
F
= 15A
IS = 15A
d
, V
GS
= 0V
V
GS
= 4.5V, I
D
= 15A
d
nC
m
A
V
DS
= 16V, V
GS
= 0
V
DS
= 16V, I
D
= 15A
V
GS
= 5V, V
DS
< 100mV
V
DS
= V
GS
, I
D
= 250A
V
DS
= 30V, V
GS
= 0V
V
GS
= 20V
ns
pF
V
GS
= 16V, V
GS
=0
I
D
= 15A
V
GS
= 5.0V
Clamped Inductive Load
www.irf.com
3
IRLR8103V
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
V , Drain-to-Source Voltage (V)
I , D
r
ain-to-S
ource C
u
rrent (A
)
DS
D
2.7V
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
V , Drain-to-Source Voltage (V)
I , D
r
a
i
n
-
to
-S
o
u
r
ce
C
u
rre
n
t
(A
)
DS
D
2.7V
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R
, D
r
a
i
n
-
to
-S
o
u
r
c
e
On
R
e
s
i
s
t
a
n
c
e
(
N
or
m
a
l
i
z
ed)
J
D
S
(
on)
V
=
I =
GS
D
10V
15A
10
100
1000
2.0
3.0
4.0
5.0
6.0
7.0
V = 15V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , D
r
a
i
n
-
to
-S
o
u
r
c
e
C
u
rre
n
t
(A
)
GS
D
T = 25 C
J
T = 150 C
J
www.irf.com
4
IRLR8103V
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
1
10
100
0
1000
2000
3000
4000
5000
V , Drain-to-Source Voltage (V)
C,
Capaci
t
ance (
p
F)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
5
10
15
20
25
30
0
1
2
3
4
5
6
Q , Total Gate Charge (nC)
V ,
G
a
t
e
-
t
o-
Sour
ce Vol
t
age (
V
)
G
GS
I =
D
15A
V
= 15V
DS
V
= 24V
DS
1
10
100
1000
10000
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
I
,
D
r
ai
n C
u
r
r
ent
(
A
)
I
,
D
r
ai
n C
u
r
r
ent
(
A
)
DS
D
10us
100us
1ms
10ms
0.1
1
10
100
1000
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V ,Source-to-Drain Voltage (V)
I
,
R
e
ver
s
e D
r
ai
n C
u
r
r
ent
(
A
)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
www.irf.com
5
IRLR8103V
R
D
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
Pulse Width 1 s
Duty Factor 0.1 %
V
GS
R
G
D.U.T.
10V
+
-
25
50
75
100
125
150
0
20
40
60
80
100
T , Case Temperature ( C)
I
,
D
r
ai
n C
u
r
r
ent
(
A
)
C
D
LIMITED BY PACKAGE
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width 1 s
Duty Factor 0.1 %
V
GS
R
G
D.U.T.
10V
V
DD
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Ther
mal R
e
s
pons
e
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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