HEXFET
Power MOSFET
S
D
G
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
3.3
R
JA
Case-to-Ambient (PCB mount)**
50
C/W
R
JA
Junction-to-Ambient
110
Thermal Resistance
V
DSS
= 55V
R
DS(on)
= 0.065
I
D
= 17A
Description
2/10/00
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1
l
Logic-Level Gate Drive
l
Surface Mount (IRLR024N)
l
Straight Lead (IRLU024N)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
Fifth Generation HEXFET
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the lowest possible on-
resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient device for use in
a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
17
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
12
A
I
DM
Pulsed Drain Current
72
P
D
@T
C
= 25C
Power Dissipation
45
W
Linear Derating Factor
0.3
W/C
V
GS
Gate-to-Source Voltage
16
V
E
AS
Single Pulse Avalanche Energy
68
mJ
I
AR
Avalanche Current
11
A
E
AR
Repetitive Avalanche Energy
4.5
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Absolute Maximum Ratings
PD- 91363E
D-Pak I-Pak
IRLR024N IRLU024N
IRLR024N
IRLU024N
IRLR/U024N
2
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S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 11A, V
GS
= 0V
t
rr
Reverse Recovery Time
60
90
ns
T
J
= 25C, I
F
= 11A
Q
rr
Reverse RecoveryCharge
130
200
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
17
72
A
V
DD
= 25V, starting T
J
= 25C, L = 790H
R
G
= 25
, I
AS
= 11A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Pulse width
300s; duty cycle
2%.
Uses IRLZ24N data and test conditions.
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact
I
SD
11A, di/dt
290A/s, V
DD
V
(BR)DSS
,
T
J
175C
Notes:
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.061
V/C
Reference to 25C, I
D
= 1mA
0.065
V
GS
= 10V, I
D
= 10A
0.080
V
GS
= 5.0V, I
D
= 10A
0.110
V
GS
= 4.0V, I
D
= 9.0A
V
GS(th)
Gate Threshold Voltage
1.0
2.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
8.3
S
V
DS
= 25V, I
D
= 11A
25
A
V
DS
= 55V, V
GS
= 0V
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
nA
V
GS
= 16V
Gate-to-Source Reverse Leakage
-100
V
GS
= -16V
Q
g
Total Gate Charge
15
I
D
= 11A
Q
gs
Gate-to-Source Charge
3.7
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
8.5
V
GS
= 5.0V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
7.1
V
DD
= 28V
t
r
Rise Time
74
ns
I
D
= 11A
t
d(off)
Turn-Off Delay Time
20
R
G
= 12
,
V
GS
= 5.0V
t
f
Fall Time
29
R
D
= 2.4
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
480
V
GS
= 0V
C
oss
Output Capacitance
130
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
61
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
nH
I
GSS
S
D
G
L
S
Internal Source Inductance
7.5
R
DS(on)
Static Drain-to-Source On-Resistance
L
D
Internal Drain Inductance
4.5
I
DSS
Drain-to-Source Leakage Current
IRLR/U024N
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3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
1 0
1 0 0
0.1
1
1 0
1 0 0
I , D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
D
V , D ra in-to-S ource V o ltage (V )
D S
A
20 s P U L S E W ID T H
T = 2 5C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5 V
0.1
1
1 0
1 0 0
0.1
1
1 0
1 0 0
I , D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
D
V , D rain-to-S ource V oltage (V )
D S
A
2 0 s P U LS E W ID T H
T = 1 75 C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2 .5V
J
0 . 1
1
1 0
1 0 0
2
3
4
5
6
7
8
9
1 0
T = 2 5 C
J
G S
V , G ate-to -S o urce V oltag e (V )
D
I
,
D
r
a
i
n
-
t
o
-
S
o
u
rc
e
C
u
rre
n
t
(A
)
T = 1 7 5 C
J
A
V = 1 5V
2 0 s P U L S E W ID TH
DS
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
3 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , J unc tion T em perature (C )
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
DS
(
o
n
)
(
N
or
m
a
l
i
z
ed)
V = 1 0V
G S
A
I = 18 A
D
17 A
IRLR/U024N
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
2 0 0
4 0 0
6 0 0
8 0 0
1
1 0
1 0 0
C
,
Cap
ac
i
t
a
n
c
e
(
p
F
)
D S
V , D rain-to-S ourc e V oltage (V )
A
V = 0V , f = 1M H z
C = C + C , C S H O R T E D
C = C
C = C + C
G S
is s g s g d d s
rs s g d
o ss d s gd
C
iss
C
os s
C
rs s
0
3
6
9
1 2
1 5
0
4
8
1 2
1 6
2 0
Q , T otal G ate C harge (nC )
G
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
GS
A
F O R T E S T C IR C U IT
S E E F IG U R E 1 3
V = 4 4V
V = 2 8V
I = 11 A
D S
D S
D
1
1 0
1 0 0
0 . 4
0 . 8
1 . 2
1 . 6
2 . 0
T = 25C
J
V = 0V
G S
V , S ou rce-to -D rain V olta ge (V)
I
, R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t (
A
)
S D
SD
A
T = 1 75 C
J
1
1 0
1 0 0
1 0 0 0
1
1 0
1 0 0
V , D ra in-to-So urce Vo ltage (V)
D S
I
,
D
r
ai
n
C
u
r
r
ent
(
A
)
O P E R AT ION IN TH IS AR E A LIM ITE D
B Y R
D
D S (on)
1 0 s
1 00 s
1 m s
1 0m s
A
T = 25C
T = 175C
S ingle P ulse
C
J
IRLR/U024N
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5
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
5V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
t , R e ctan g ula r P ulse D u ratio n (sec )
1
th
J
C
D = 0 .5 0
0 .0 1
0 .0 2
0 .0 5
0 .1 0
0 .2 0
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
A
T
h
e
r
m
a
l
R
e
sp
o
n
se
(
Z
)
P
t 2
1
t
D M
N ote s:
1 . D u ty fac tor D = t / t
2. P e a k T = P x Z + T
1
2
J
D M
th JC
C
25
50
75
100
125
150
175
0
5
10
15
20
T , Case Temperature ( C)
I , Drain Current (A)
C
D
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