IRLZ14S/L
HEXFET
Power MOSFET
PD - 9.903A
l
Advanced Process Technology
l
Surface Mount (IRLZ14S)
l
Low-profile through-hole (IRLZ14L)
l
175C Operating Temperature
l
Fast Switching
V
DSS
= 60V
R
DS(on)
= 0.20
I
D
= 10A
2
D P a k
T O - 2 6 2
8/25/97
S
D
G
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
3.5
R
JA
Junction-to-Ambient ( PCB Mounted,steady-state)**
40
Thermal Resistance
C/W
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
10
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
7.2
A
I
DM
Pulsed Drain Current
40
P
D
@T
A
= 25C
Power Dissipation
3.7
W
P
D
@T
C
= 25C
Power Dissipation
43
W
Linear Derating Factor
0.29
W/C
V
GS
Gate-to-Source Voltage
10
V
E
AS
Single Pulse Avalanche Energy
68
mJ
dv/dt
Peak Diode Recovery dv/dt
4.5
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Absolute Maximum Ratings
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ14L) is available for low-
profile applications.
C
IRLZ14S/L
V
DD
= 25V
,
starting T
J
= 25C, L = 790H
R
G
= 25
, I
AS
= 10A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
I
SD
10A, di/dt
90A/s, V
DD
V
(BR)DSS
,
T
J
175C
Pulse width
300s; duty cycle
2%.
Uses IRLZ14 data and test conditions
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.6
V
T
J
= 25C, I
S
= 10A, V
GS
= 0V
t
rr
Reverse Recovery Time
93
130
ns
T
J
= 25C, I
F
= 10A
Q
rr
Reverse Recovery Charge
340
650
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
10
40
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
60
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.07
V/C
Reference to 25C, I
D
= 1mA
0.2
V
GS
= 5.0V, I
D
= 6.0A
0.28
V
GS
= 4.0V, I
D
= 5.0A
V
GS(th)
Gate Threshold Voltage
1.0
2.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
3.5
S
V
DS
= 25V, I
D
= 6.0A
25
A
V
DS
= 60V, V
GS
= 0V
250
V
DS
= 48V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 10V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -10V
Q
g
Total Gate Charge
8.4
I
D
= 10A
Q
gs
Gate-to-Source Charge
3.5
nC
V
DS
= 48V
Q
gd
Gate-to-Drain ("Miller") Charge
6.0
V
GS
= 5.0V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
9.3
V
DD
= 30V
t
r
Rise Time
110
I
D
= 10A
t
d(off)
Turn-Off Delay Time
17
R
G
= 12
t
f
Fall Time
26
R
D
= 2.8
,
See Fig. 10
Between lead,
and center of die contact
C
iss
Input Capacitance
400
V
GS
= 0V
C
oss
Output Capacitance
170
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
42
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance
7.5
nH
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