HEXFET
Power MOSFET
IRLZ24N
PD - 91357C
l
Logic-Level Gate Drive
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
V
DSS
= 55V
R
DS(on)
= 0.06
I
D
= 18A
S
D
G
TO-220AB
07/12/02
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case
3.3
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
C/W
R
JA
Junction-to-Ambient
62
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Description
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
18
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
13
A
I
DM
Pulsed Drain Current
72
P
D
@T
C
= 25C
Power Dissipation
45
W
Linear Derating Factor
0.30
W/C
V
GS
Gate-to-Source Voltage
16
V
E
AS
Single Pulse Avalanche Energy
68
mJ
I
AR
Avalanche Current
11
A
E
AR
Repetitive Avalanche Energy
4.5
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.
10 lbfin (1.1Nm)
Absolute Maximum Ratings
IRLZ24N
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.061
V/C Reference to 25C, I
D
= 1mA
0.060
V
GS
= 10V, I
D
= 11A
0.075
V
GS
= 5.0V, I
D
= 11A
0.105
V
GS
= 4.0V, I
D
= 9.0A
V
GS(th)
Gate Threshold Voltage
1.0
2.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
8.3
S
V
DS
= 25V, I
D
= 11A
25
V
DS
= 55V, V
GS
= 0V
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 16V
Gate-to-Source Reverse Leakage
-100
V
GS
= -16V
Q
g
Total Gate Charge
15
I
D
= 11A
Q
gs
Gate-to-Source Charge
3.7
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
8.5
V
GS
= 5.0V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
7.1
V
DD
= 28V
t
r
Rise Time
74
I
D
= 11A
t
d(off)
Turn-Off Delay Time
20
R
G
= 12
,
V
GS
= 5.0V
t
f
Fall Time
29
R
D
= 2.4
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
480
V
GS
= 0V
C
oss
Output Capacitance
130
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
61
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
S
D
G
I
DSS
Drain-to-Source Leakage Current
I
GSS
L
S
Internal Source Inductance
7.5
L
D
Internal Drain Inductance
4.5
A
nA
ns
nH
R
DS(on)
Static Drain-to-Source On-Resistance
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 11A, V
GS
= 0V
t
rr
Reverse Recovery Time
60
90
ns
T
J
= 25C, I
F
= 11A
Q
rr
Reverse RecoveryCharge
130 200
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
72
18
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
11A, di/dt
290A/s, V
DD
V
(BR)DSS
,
T
J
175C
Notes:
V
DD
= 25V, starting T
J
= 25C, L = 790H
R
G
= 25
, I
AS
= 11A. (See Figure 12)
Pulse width
300s; duty cycle
2%.
IRLZ24N
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
0.1
1
10
100
0.1
1
10
100
I , D
r
a
i
n
-
to
-S
o
u
rc
e
C
u
rre
n
t
(A
)
D
V , Drain-to-Source Voltage (V)
DS
A
20s PULSE WIDTH
T = 25C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
0.1
1
10
100
0.1
1
10
100
I , D
r
a
i
n
-
to
-S
o
u
rc
e
C
u
rre
n
t
(A
)
D
V , Drain-to-Source Voltage (V)
DS
A
20s PULSE WIDTH
T = 175C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
J
0.1
1
10
100
2
3
4
5
6
7
8
9
10
T = 25C
J
GS
V , Gate-to-Source Voltage (V)
D
I
, Dra
i
n
-
to
-
S
o
u
rc
e
C
u
rre
n
t
(A)
T = 175C
J
A
V = 15V
20s PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20
0
20
40
60
80
100 120 140 160 180
J
T , Junction Temperature (C)
R
, D
r
a
i
n
-
to
-S
o
u
rc
e
O
n
R
e
s
i
s
t
a
n
c
e
DS
(
o
n)
(
N
or
m
a
l
i
z
ed)
V = 10V
GS
A
I = 18A
D
IRLZ24N
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
200
400
600
800
1
10
100
C
,
C
a
p
a
c
i
ta
n
c
e
(p
F
)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
3
6
9
12
15
0
4
8
12
16
20
Q , Total Gate Charge (nC)
G
V
, G
a
te
-to
-
S
o
u
r
c
e
V
o
lta
g
e
(V
)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 13
V = 44V
V = 28V
I = 11A
DS
DS
D
1
10
100
0.4
0.8
1.2
1.6
2.0
T = 25C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , R
e
v
e
rs
e
D
r
a
i
n
C
u
rre
n
t
(A
)
SD
SD
A
T = 175C
J
1
10
100
1000
1
10
100
V , Drain-to-Source Voltage (V)
DS
I
, D
r
a
i
n
C
u
rre
n
t
(A
)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
10s
100s
1ms
10ms
A
T = 25C
T = 175C
Single Pulse
C
J
IRLZ24N
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
5.0V
+
-
V
DD
0
4
8
12
16
20
25
50
75
100
125
150
175
C
I , D
r
a
i
n
C
u
rre
n
t
(
A
m
p
s
)
D
T , Case Temperature (C)
A
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
thJC
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
A
T
her
m
a
l Res
pons
e
(
Z
)
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1
2
J
DM
thJC
C
PDF 
ZIP