Lz24nsl.p65
IRLZ24NS/L
HEXFET
Power MOSFET
PD - 91358E
l
Advanced Process Technology
l
Surface Mount (IRLZ24NS)
l
Low-profile through-hole (IRLZ24NL)
l
175C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
3.3
R
JA
Junction-to-Ambient ( PCB Mounted,steady-state)**
40
Thermal Resistance
C/W
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
18
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
13
A
I
DM
Pulsed Drain Current
72
P
D
@T
A
= 25C
Power Dissipation
3.8
W
P
D
@T
C
= 25C
Power Dissipation
45
W
Linear Derating Factor
0.30
W/C
V
GS
Gate-to-Source Voltage
16
V
E
AS
Single Pulse Avalanche Energy
68
mJ
I
AR
Avalanche Current
11
A
E
AR
Repetitive Avalanche Energy
4.5
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ24NL) is available for low-
profile applications.
Description
V
DSS
= 55V
R
DS(on)
= 0.06
I
D
= 18A
2
D P ak
T O -26 2
S
D
G
5/12/98
l
Logic-Level Gate Drive
IRLZ24NS/L
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.061
V/C
Reference to 25C, I
D
= 1mA
0.060
V
GS
= 10V, I
D
= 11A
0.075
V
GS
= 5.0V, I
D
= 11A
0.105
V
GS
= 4.0V, I
D
= 9.0A
V
GS(th)
Gate Threshold Voltage
1.0
2.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
8.3
S
V
DS
= 25V, I
D
= 11A
25
V
DS
= 55V, V
GS
= 0V
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
n A
V
GS
= 16V
Gate-to-Source Reverse Leakage
-100
V
GS
= -16V
Q
g
Total Gate Charge
15
I
D
= 11A
Q
gs
Gate-to-Source Charge
3.7
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
8.5
V
GS
= 5.0V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
7.1
V
DD
= 28V
t
r
Rise Time
74
I
D
= 11A
t
d(off)
Turn-Off Delay Time
20
R
G
= 12
,
V
GS
= 5.0V
t
f
Fall Time
29
R
D
= 2.4
,
See Fig. 10
Between lead,
and center of die contact
C
iss
Input Capacitance
480
V
GS
= 0V
C
oss
Output Capacitance
130
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
61
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
nH
I
GSS
R
DS(on)
Static Drain-to-Source On-Resistance
L
S
Internal Source Inductance
7.5
ns
I
DSS
Drain-to-Source Leakage Current
A
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 11A, V
GS
= 0V
t
rr
Reverse Recovery Time
60
90
ns
T
J
= 25C, I
F
= 11A
Q
rr
Reverse Recovery Charge
130
200
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
S
D
G
A
18
72
Pulse width
300s; duty cycle
2%.
Notes:
Uses IRLZ24N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
I
SD
11A, di/dt
290A/s, V
DD
V
(BR)DSS
,
T
J
175C
V
DD
= 25V, starting T
J
= 25C, L = 790H
R
G
= 25
, I
AS
= 11A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
IRLZ24NS/L
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
0.1
1
1 0
1 0 0
0.1
1
1 0
1 0 0
I , D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
D
V , D rain-to-S ou rce V o ltage (V )
D S
A
2 0 s P U LS E W ID T H
T = 2 5C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2 .5V
0.1
1
1 0
1 0 0
0.1
1
1 0
1 0 0
I , D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
D
V , D rain-to-S ource V oltage (V )
D S
A
2 0 s P U LS E W ID T H
T = 1 75 C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2 .5V
J
0 . 1
1
1 0
1 0 0
2
3
4
5
6
7
8
9
1 0
T = 2 5 C
J
G S
V , G ate-to -S o urce V oltag e (V )
D
I
,
D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T = 1 7 5 C
J
A
V = 1 5V
2 0 s P U L S E W ID TH
DS
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
3 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , Junction T em perature (C )
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
DS
(
o
n
)
(
N
or
m
a
l
i
z
ed)
V = 10 V
G S
A
I = 1 8A
D
IRLZ24NS/L
Fig 7. Typical Source-Drain Diode
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
2 0 0
4 0 0
6 0 0
8 0 0
1
1 0
1 0 0
C
,
Cap
ac
i
t
a
n
c
e
(
p
F
)
D S
V , D rain-to-S ourc e V oltage (V )
A
V = 0V , f = 1M H z
C = C + C , C S H O R T E D
C = C
C = C + C
G S
is s g s g d d s
rs s g d
o ss d s gd
C
iss
C
os s
C
rs s
0
3
6
9
1 2
1 5
0
4
8
1 2
1 6
2 0
Q , T otal G ate C harge (nC )
G
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
GS
A
F O R T E S T C IR C U IT
S E E F IG U R E 1 3
V = 44 V
V = 28 V
I = 1 1A
D S
D S
D
1
1 0
1 0 0
0 . 4
0 . 8
1 . 2
1 . 6
2 . 0
T = 2 5C
J
V = 0 V
G S
V , S o urc e-to -D ra in V o lta ge (V )
I , R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
S D
SD
A
T = 1 75 C
J
1
1 0
1 0 0
1 0 0 0
1
1 0
1 0 0
V , D ra in-to-S o u rce V o lta ge (V )
D S
I , D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D
D S (o n)
1 0 s
1 0 0 s
1 m s
1 0 m s
A
T = 25 C
T = 17 5C
S ing le P u ls e
C
J
IRLZ24NS/L
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
5.0V
+
-
V
DD
0
4
8
1 2
1 6
2 0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
1 7 5
C
I , D
r
a
i
n
C
u
r
r
e
n
t
(
A
m
p
s
)
D
T , C ase T em pe ra ture (C )
A
0 . 0 1
0 . 1
1
1 0
0 . 0 0 0 0 1
0 . 0 0 0 1
0 . 0 0 1
0 . 0 1
0 . 1
1
t , R ectan gu lar P ulse D u ratio n (se c)
1
th
J
C
D = 0 .50
0 .01
0 .0 2
0 .0 5
0 .1 0
0 .2 0
SIN G LE P U LSE
(T H ER M AL R ES PO N SE )
A
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
)
P
t
2
1
t
D M
N o te s :
1 . D u ty fa c to r D = t / t
2 . P e a k T = P x Z + T
1
2
J
D M
th J C
C
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