SCHOTTKY RECTIFIER JANTX1N6844U3
15A, 100V
Major Ratings and Characteristics
Description/Features
09/08/05
CASE STYLE
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1
Characteristics
Limits
Units
I
F(AV)
Rectangular Waveform
15
A
V
RRM
100
V
I
FSM
@tp = 8.3ms half-sine
250
A
V
F
@15Apk, T
J
=125C
0.72
V
T
J
, T
stg
Operating and Storage
-65 to 150
C
HIGH EFFICIENCY SERIES
JANTXV1N6844U3
Case Outline and Dimensions - SMD-0.5
( ISOLATED BASE )
CATHODE ANODE ANODE
The1N6844U3 Schottky rectifier has been expressly
designed to meet the rigorous requirements of Hirel
environments. It is packaged in the hermetic surface
mount SMD-0.5 ceramic package. The device's
forward voltage drop and reverse leakage current are
optimized for the lowest power loss and the highest
circuit efficiency for typical high frequency switching
power supplies and resonent power converters. Full
MIL-PRF-19500 quality conformance testing is available
on source controlled drawings to S, TX and TXV levels.
Hermetically Sealed
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long Term
Reliability
Surface Mount
Lightweight
JANS1N6844U3
15LJQ100
REF: MIL-PRF-19500/679
PD-91855B
15LJQ100, 1N6844U3
2
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Voltage Ratings
Parameters
Limits Units
Conditions
I
F(AV)
Max. Average Forward Current
15
A
50% duty cycle @ T
C
= 125C, rectangular waveform
See Fig. 5
I
FSM
Max. Peak One Cycle Non - Repetitive
250
A
@ t
p
= 8.3 ms half-sine
Surge Current
Absolute Maximum Ratings
Pulse Width < 300s, Duty Cycle < 2%
Parameters
Limits Units Conditions
T
J
Max.Junction Temperature Range
-65 to 150
C
T
stg
Max. Storage Temperature Range
-65 to 150
C
R
thJC
Max. Thermal Resistance, Junction
2.0
C/W
DC operation
See Fig. 4
to Case
wt
Weight (Typical)
1.0 g
Die Size
125X125 mils
Case Style
SMD-0.5
Thermal-Mechanical Specifications
Parameters
Limits Units Conditions
V
FM
Max. Forward Voltage Drop
0.70
V
@ 5.0A
See Fig. 1
0.90
V
@ 15A
1.0
V
@ 20A
0.58
V
@ 5.0A
0.72
V
@ 15A
0.85
V
@ 5.0A
T
J
= -55C
I
RM
Max. Reverse Leakage Current
50
A
T
J
= 25C
V
R
= rated V
R
See Fig. 2
10
mA
T
J
= 125C
C
T
Max. Junction Capacitance
600
pF
V
R
= 5V
DC
( 1MHz, 25C )
L
S
Typical Series Inductance
4.8
nH
Measured from center of cathode pad to center of
anode pad
Electrical Specifications
T
J
= 25C
T
J
=1 25C
100
Part number
1N6844U3
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
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3
15LJQ100, 1N6844U3
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
Fig. 1 - Max. Forward Voltage Drop Characteristics
0.1
1
10
100
0.0
0.5
1.0
1.5
FM
F
I
n
s
t
ant
an
eou
s
F
o
r
w
a
r
d
C
u
r
r
ent
-
I
(
A
)
Forward Voltage Drop - V (V)
T = 150C
T = 125C
T = 25C
T = -55C
J
J
J
J
0.0001
0.001
0.01
0.1
1
10
100
1000
0
20
40
60
80
100
R
R
75C
50C
25C
Reverse Voltage - V (V)
Re
v
e
r
s
e
Cu
r
r
e
n
t
- I
(
m
A)
125C
150C
T = 175C
J
A
100
1000
0
20
40
60
80
100
T = 25C
J
Reverse Voltage - V (V)
R
T
J
u
n
c
ti
o
n
C
a
p
a
c
i
ta
n
c
e
-
C
(
p
F
)
A
15LJQ100, 1N6844U3
4
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Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/05
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
D = 0.4
D = 0.5
D = 0.2
D = 0.1
D = 0.3
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0
5
10
15
20
25
Average Forward Current - I F(AV) (A)
0
20
40
60
80
100
120
140
160
A
l
l
o
w
a
b
l
e
C
a
s
e
T
e
m
p
e
r
a
t
u
r
e
-
(
C
)
RthJC (DC) = 2C/W
Square Wave (D=0.50)
80% Rated VR applied
DC
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