SCHOTTKY RECTIFIER
1 Amp
MBRS190TR
MBRS1100TR
Bulletin PD-20592 rev. C 05/02
1
www.irf.com
I
F(AV)
Rectangular waveform
1.0
A
V
RRM
90 - 100
V
I
FSM
@ tp = 5 s sine
870
A
V
F
@
1.0 Apk, T
J
=125C
0.63
V
T
J
range
- 55 to 175
C
Characteristics
Units
The MBRS190TR, MBRS1100TR surface-mount Schottky
rectifier has been designed for applications requiring low
forward drop and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, free-wheeling diodes, battery charging, and
reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Description/Features
SMB
3.80 (.150)
3.30 (.130)
4.70 (.185)
4.10 (.161)
2.15 (.085)
1.80 (.071)
2.40 (.094)
1.90 (.075)
1.30 (.051)
0.76 (.030)
0.30 (.012)
0.15 (.006)
5.60 (.220)
5.00 (.197)
4.0 (.157)
2.0 TYP.
(.079 TYP.)
2.5 TYP.
(.098 TYP.)
SOLDERING PAD
CATHODE
ANODE
1
2
1
2
POLARITY
PART NUMBER
4.2 (.165)
MBR190TR
MBR1100TR
Device Marking: IR19/ IR10
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Major Ratings and Characteristics
MBRS190TR, MBRS1100TR
Bulletin PD-20592 rev. C 05/02
2
www.irf.com
Voltage Ratings
V
FM
Max. Forward Voltage Drop (1)
0.78
V
@ 1A
T
J
= 25 C
* See Fig. 1
0.62
V
@ 1A
T
J
= 125 C
I
RM
Max. Reverse Leakage Current (1)
0.5
mA
T
J
= 25 C
* See Fig. 2
1.0
mA
T
J
= 125 C
C
T
Typical Junction Capacitance
42
pF
V
R
= 5V
DC
, (test signal range 100kHz to 1MHz) 25C
L
S
Typical Series Inductance
2.0
nH
Measured lead to lead 5mm from package body
dv/dt Max. Volatge Rate of Charge
10000
V/ s
(Rated V
R
)
V
R
= rated V
R
Electrical Specifications
Parameters
Value Units
Conditions
(1) Pulse Width < 300s, Duty Cycle < 2%
I
F(AV)
Max. Average Forward Current
1.0
A
50% duty cycle @ T
L
= 147 C, rectangular wave form
I
FSM
Max. Peak One Cycle Non-Repetitive
870
A
5s Sine or 3s Rect. pulse
Surge Current
50
10ms Sine or 6ms Rect. pulse
E
AS
Non- Repetitive Avalanche Energy
5.0
mJ
T
J
= 25 C, I
AS
= 0.5A, L = 10mH
I
AR
Repetitive Avalanche Current
0.2
A
Parameters
Value Units Conditions
Absolute Maximum Ratings
Following any rated
load condition and
with rated V
RRM
applied
V
R
Max. DC Reverse Voltage (V)
90
100
V
RWM
Max. Working Peak Reverse Voltage (V)
Part number
MBRS190TR
MBRS1100TR
T
J
Max. Junction Temperature Range (*) - 55 to 175
C
T
stg
Max. Storage Temperature Range
- 55 to 175
C
R
thJL
Max. Thermal Resistance
36
C/W DC operation (See Fig. 4)
Junction to Lead
(**)
R
thJA
Max. Thermal Resistance
80
C/W DC operation
Junction to Ambient
wt
Approximate Weight
0.10 (0.003) g (oz.)
Case Style
SMB
Similar to DO-214AA
Device Marking
IR19-IR10
Thermal-Mechanical Specifications
Parameters
Value Units
Conditions
(**) Mounted 1 inch square PCB
<
thermal runaway condition for a diode on its own heatsink
(*) dPtot
1
dTj
Rth( j-a)
MBRS190TR, MBRS1100TR
Bulletin PD-20592 rev. C 05/02
3
www.irf.com
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Instantaneous Forward Current - I
F
(A)
Forward Voltage Drop - V
FM
(V)
Reverse Current - I
R
(m A)
Reverse Voltage - V
R
(V)
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
(p F)
0.1
1
10
0.2
0.4
0.6
0.8
1
Tj = 175C
Tj = 125C
Tj = 25C
.00001
0.0001
0.001
0.01
0.1
1
10
0
20
40
60
80
100
75C
25C
Tj = 175C
150C
125C
100C
50C
10
100
0
20
40
60
80
100
T = 25C
J
Thermal Impedance Z
thJC
(C/W)
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics (Per Leg)
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Single Pulse
(Thermal Resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2
.
2. Peak Tj = Pdm x ZthJC + Tc
.
MBRS190TR, MBRS1100TR
Bulletin PD-20592 rev. C 05/02
4
www.irf.com
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
Average Forward Current - I
F(AV)
(A)
Allowable Lead Temperature (C)
Average Forward Current - I
F(AV)
(A)
Average Power Loss (Watts)
Square Wave Pulse Duration - T
p
(Microsec)
Non-Repetitive Surge Current - I
FSM
(A)
0
0.2
0.4
0.6
0.8
1
0
0.3
0.6
0.9
1.2
1.5
DC
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
110
120
130
140
150
160
170
180
0
0.4
0.8
1.2
1.6
DC
Square wave (D = 0.50)
Rated Vr applied
see note (2)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10
100
1000
10
100
1000
10000
At Any Rated Load Condition
And With rated Vrrm Applied
Following Surge
MBRS190TR, MBRS1100TR
Bulletin PD-20592 rev. C 05/02
5
www.irf.com
IR LOGO
YEAR
CURRENT
IR10
VOLTAGE
YYWWX
WEEK
SITE ID
Tape & Reel Information
Dimensions in millimetres and (inches)
Marking & Identification
Ordering Information
MBRS1100TR - TAPE AND REEL
WHEN ORDERING, INDICATE THE PART NUMBER
AND THE QUANTITY ( IN MULTIPLES OF 3000
PIECES).
EXAMPLE:
MBRS1100TR - 6000 PIECES
Each device has 2 rows for identification. The first row
designates the device as manufactured by International
Rectifier as indicated by the letters "IR", and the Part
Number (indicates the current and the voltage rating).
The second row indicates the year, the week of
manufacturing and the Site ID.
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