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Электронный компонент: PVD1052

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Data Sheet No. PD10023E
Series PVD10
Microelectronic Power IC
BOSFET
Photovoltaic Relay
Single-Pole, 160mA, 0-100V DC
General Description
The Photovoltaic DC Relay (PVD) is a single-pole,
normally open solid state replacement for electro-
mechanical relays used for general purpose switch-
ing of analog signals. It utilizes as an output switch a
unique bidirectional (AC or DC) MOSFET power IC
termed a BOSFET. The BOSFET is controlled by a
photovoltaic generator of novel construction, which
is energized by radiation from a dielectrically iso-
lated light emitting diode (LED).
The PVD overcomes the limitations of both conven-
tional and reed electromechanical relays by offering
the solid state advantages of long life, high operat-
ing speed, low pick-up power, bounce-free opera-
tion, low thermal voltages and miniaturization. These
advantages allow product improvement and design
innovations in many applications such as process
control, multiplexing, telecommunications, automatic
test equipment and data acquisition.
The PVD can switch analog signals from thermo-
couple level to 100 volts peak DC. Signal frequen-
cies into the RF range are easily controlled and
switching rates up to 18kHz are achievable. The
extremely small thermally generated offset voltages
allow increased measurement accuracies.
Unique silicon technology developed by International
Rectifier forms the heart of the PVD. The monolithic
BOSFET contains a bidirectional N-channel power
MOSFET output structure. In addition, this power IC
chip has input circuitry for fast turn-off and gate
protection functions. This section of the BOSFET chip
utilizes both bipolar and MOS technology to form
NPN transistors, P-channel MOSFETs, resistors,
diodes and capacitors.
The photovoltaic generator similarly utilizes a unique
International Rectifier alloyed multijunction structure.
The excellent current conversion efficiency of this
technique results in the very fast response of the
PVD microelectronic power IC relay.
This advanced semiconductor technology has cre-
ated a radically new control device. Designers can
now develop switching systems to new standards of
electrical performance and mechanical compactness.
Features
BOSFET Power IC
s
s
s
s
s
10
10
Operations
s
s
s
s
s
25sec Operating Time
s
s
s
s
s
3 milliwatts Pick-Up Power
s
s
s
s
s
1000V/sec dv/dt
s
s
s
s
s
Bounce-Free
s
s
s
s
s
8-pin DIP Package
s
s
s
s
s
-40C to 85C
s
s
s
s
s
UL recognized
s
s
s
s
s
Part Identification
Part Number
Operating
Sensitivity
Off-State
Voltage (DC)
Resistance
PVD1052
10
8
Ohms
0 100V
5 mA
PVD1054
10
10
Ohms
(BOSFET is a trademark of International Rectifier)
Series PVD10
2
INPUT CHARACTERISTICS
PVD1052
PVD1054
Units
Minimum Control Current
(see figures 1 and 2)
DC
For 80mA Continuous Load Current
2.0
mA@25C
For 130mA Continuous Load Current
5.0
mA@40C
For 50mA Continuous Load Current
5.0
mA@80C
Maximum Control Current for Off-State Resistance at 25C
10
A(DC)
Control Current Range (Caution: current limit input LED. See figure 6)
2.0 to 25
mA(DC)
Maximum Reverse Voltage
7.0
V(DC)
Electrical Specifications (-40
C
T
A
+85
C unless otherwise specified
)
GENERAL CHARACTERISTICS (PVD1052 and PVD1054)
Units
Dielectric Strength: Input-Output
2500
V
RMS
Insulation Resistance: Input-Output @ 90V
DC
10
12
@ 25C - 50% RH
Maximum Capacitance: Input-Output
1.0
pF
Max. Pin Soldering Temperature
(1.6mm below seating plane, 10 seconds max.)
+260
Ambient Temperature Range:
Operating
-40 to +85
C
Storage
-40 to +100
OUTPUT CHARACTERISTICS
PVD1052
PVD1054
Units
Operating Voltage Range
0 to 100
V
(RMS)
Maxiumum Load Current 40C (see figures 1and 2)
160
mA
(DC)
Response Time @25C (see figures 7 and 8)
Max. T(on) @ 12mA Control, 50 mA Load, 50 VDC, 0 to 90%
25
s
Max. T(off) @ 12mA Control, 50 mA Load, 50 VDC, 100% to 10%
15
s
Max. On-state Resistance 25C
(Pulsed) (fig. 4) 50 mA Load, 5mA Control
8.0
Min. Off-state Resistance 25C @ 80 VDC (see figure 5)
10
8
10
10
Max. Thermal Offset Voltage @ 5.0mA Control
0.2
volts
Min. Off-State dv/dt
1000
V/s
Output Capacitance
8.0
pF @ 50VDC
Series PVD10
3
Max. Load Current mA
Figure 1. Current Derating Curves
Figure 2. Typical Control Current Requirements
Figure 3.Typical On Characteristics
Figure 4. Typical On-Resistance
Input Current (mA)
ILED (mA)
LED Forward Voltage Drop (Volts DC)
Max. Load Current mA
Ambient Temperature (C)
Load Current (mA)
VDS (Volts)
Series PVD10
4
I D
O
f
f/I
D
O
f
f 25C
Figure 5. Normalized Off-State Leakage
Figure 6. Input Characteristics
(Current Controlled)
Figure 7.Typical Delay Times
Figure 8. Delay Time Definitions
LED Forward Voltage Drop (Volts DC)
Input Current (mA)
Ambient Temperature (C)
I LED
(mA)
Delay Time (microseconds)
Series PVD10
5
Figure 9. Typical Output Capacitance
T
ypical Capacitance (picofarads)
VDD Drain to Drain Voltage
Wiring Diagram