OBSOLETE
Data Sheet No. PD10024E
Series PVD13
Microelectronic Power IC
BOSFET
Photovoltaic Relay
Single-Pole, 500mA, 0-100V DC
General Description
The Photovoltaic DC Relay (PVD) is a single-pole,
normally open solid state replacement for electro-
mechanical relays used for general purpose switch-
ing of analog signals. It utilizes as an output switch a
unique bidirectional (AC or DC) MOSFET power IC
termed a BOSFET. The BOSFET is controlled by a
photovoltaic generator of novel construction, which
is energized by radiation from a dielectrically iso-
lated light emitting diode (LED).
The PVD overcomes the limitations of both conven-
tional and reed electromechanical relays by offering
the solid state advantages of long life, high operat-
ing speed, low pick-up power, bounce-free opera-
tion, low thermal voltages and miniaturization. These
advantages allow product improvement and design
innovations in many applications such as process
control, multiplexing, telecommunications, automatic
test equipment and data acquisition.
The PVD can switch analog signals from thermo-
couple level to 100 volts peak DC. Signal frequen-
cies into the RF range are easily controlled and
switching rates up to 2kHz are achievable. The ex-
tremely small thermally generated offset voltages
allow increased measurement accuracies.
Unique silicon technology developed by International
Rectifier forms the heart of the PVD. The monolithic
BOSFET contains a bidirectional N-channel power
MOSFET output structure. In addition, this power IC
chip has input circuitry for fast turn-off and gate pro-
tection functions. This section of the BOSFET chip
utilizes both bipolar and MOS technology to form
NPN transistors, P-channel MOSFETs, resistors, di-
odes and capacitors.
The photovoltaic generator similarly utilizes a unique
International Rectifier alloyed multijunction structure.
The excellent current conversion efficiency of this
technique results in the very fast response of the
PVD microelectronic power IC relay.
This advanced semiconductor technology has cre-
ated a radically new control device. Designers can
now develop switching systems to new standards of
electrical performance and mechanical compactness.
Features
BOSFET Power IC
s
s
s
s
s
10
10
Operations
s
s
s
s
s
300sec Operating Time
s
s
s
s
s
3 milliwatts Pick-Up Power
s
s
s
s
s
1000V/sec dv/dt
s
s
s
s
s
Bounce-Free
s
s
s
s
s
8-pin DIP Package
s
s
s
s
s
-40C to 85C
s
s
s
s
s
UL recognized
s
s
s
s
s
Part Identification
Part Number
Operating
Sensitivity
Off-State
Voltage (DC)
Resistance
PVD1352
10
8
Ohms
0 100V
5 mA
PVD1354
10
10
Ohms
(BOSFET is a trademark of International Rectifier)
Replaced by PVD13N
5AHEAI28,!
2
Replaced by PVD13N
OBSOLETE
INPUT CHARACTERISTICS
PVD1352
PVD1354
Units
Minimum Control Current
(see figures 1 and 2)
DC
For 300mA Continuous Load Current
2.0
mA@25C
For 400mA Continuous Load Current
5.0
mA@40C
For 150mA Continuous Load Current
5.0
mA@85C
Maximum Control Current for Off-State Resistance at 25C
10
A(DC)
Control Current Range (Caution: current limit input LED. See figure 6)
2.0 to 25
mA(DC)
Maximum Reverse Voltage
7.0
V(DC)
Electrical Specifications (-40
C
T
A
+85
C unless otherwise specified
)
GENERAL CHARACTERISTICS (PVD1352 and PVD1354)
Units
Dielectric Strength: Input-Output
2500
V
RMS
Insulation Resistance: Input-Output @ 90V
DC
10
12
@ 25C - 50% RH
Maximum Capacitance: Input-Output
1.0
pF
Max. Pin Soldering Temperature
(1.6mm below seating plane, 10 seconds max.)
+260
Ambient Temperature Range:
Operating
-40 to +85
C
Storage
-40 to +100
OUTPUT CHARACTERISTICS
PVD1352
PVD1354
Units
Operating Voltage Range
0 to + 100
V
(PEAK)
Maxiumum Load Current 40C (see figures 1and 2)
500
mA
(DC)
Response Time @25C (see figures 7 and 8)
Max. T(on) @ 12mA Control, 50 mA Load, 100 VDC
300
s
Max. T(off) @ 12mA Control, 50 mA Load, 100 VDC
50
s
Max. On-state Resistance 25C
(Pulsed) (fig. 4) 200 mA Load, 5mA Control
1.5
Min. Off-state Resistance 25C @ 80 VDC (see figure 5)
10
8
10
10
Max. Thermal Offset Voltage @ 5.0mA Control
0.2
volts
Min. Off-State dv/dt
1000
V/s
Output Capacitance
12
pF @ 50VDC
5AHEAI28,!
3
Replaced by PVD13N
OBSOLETE
Max. Load Current (mA)
Figure 1. Current Derating Curves
Figure 2. Typical Control Current Requirements
Figure 3.Typical On Characteristics
RDS
(on)
(Normalized to 25C)
ILED (mA)
Ambient Temperature (C)
Load Current (mA)
Ambient Temperature (C)
VDS (Volts)
Load Current (mA)
Figure 4. Typical Normalized On-Resistance
5AHEAI28,!
4
Replaced by PVD13N
OBSOLETE
I D
O
f
f/I
D
O
f
f 25C
Figure 5. Normalized Off-State Leakage
Figure 6. Input Characteristics
(Current Controlled)
Figure 7.Typical Delay Times
Figure 8. Delay Time Definitions
LED Forward Voltage Drop (Volts DC)
Input Current (mA)
Ambient Temperature (C)
I LED
(mA)
Delay Time (microseconds)
5AHEAI28,!
5
Replaced by PVD13N
OBSOLETE
T
ypical Capacitance (picofarads)
Wiring Diagram
Figure 10. Typical Output Capacitance
VDS Drain to Source Voltage
Normalized T
ransfer Ratio
Figure 9. Typical Control Threshold and Transfer Ratio
Ambient Temperature C
Normalized Control Threshold Current
5AHEAI28,!
6
Replaced by PVD13N
OBSOLETE
Case Outline
(Dimensions in millimeters (inches))
Mechanical Specifications:
Package: 8-pin DIP
Tolerances: .015 (.38) unless otherwise specified
Case Material: molded epoxy
Weight: .07 oz. (2 gr.)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
http://www.irf.com/
Data and specifications subject to change without notice. 12/6/2000
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