Data Sheet No. 1.039
PVDZ172N
Microelectronic
Power IC Relay
Single Pole, Normally Open
0-60V DC, 1.5A
HEXFET
POWER MOSFET PHOTOVOLTAIC RELAY
General Description
The PVDZ172N Photovoltaic Relay is a single-
pole, normally open solid state relay that can
replace electromechanical relays used for gen-
eral purpose switching of DC loads. It utilizes
International Rectifier's HEXFET power MOS-
FET as the output switch, driven by an integrated
circuit photovoltaic generator of novel construc-
tion. The output switch is controlled by radiation
from a GaAlAs light emitting diode (LED) which
is optically isolated from the photovoltaic gen-
erator.
These units overcome the limitations of both
electromechanical and reed relays by offering
the solid-state advantages of high sensitivity,
miniaturization, no contact bounce, long opera-
tional life, insensitivity to external magnetic fields,
shock and vibration, and high reliability inherent
with solid state technology. They are ideally
suited for switching high currents or low level
signals without distortion or injection of electri-
cal noise.
These relays are packaged in 8-pin, molded
DIP packages and available with thru-hole and
SMT (gull-wing) leads, in plastic shipping tubes.
PVDZ172N Features
250mW On-Resistance
s
s
s
s
s
Bounce-free Operation
s
s
s
s
s
1.5 Amp capacity
s
s
s
s
s
4000 V
RMS
I/O isolation
s
s
s
s
s
Solid-State reliability
s
s
s
s
s
UL recognition and CSA certification pending
s
s
s
s
s
Applications
Portable Electronics
s
s
s
s
s
Programmable Logic Controllers
s
s
s
s
s
Computers and Peripheral Devices
s
s
s
s
s
Audio Equipment
s
s
s
s
s
Power Supplies and Power Distribution
s
s
s
s
s
Instrumentation
s
s
s
s
s
Part Identification
PVDZ172N
thru-hole
PVDZ172NS
SMT (gull-wing)
(HEXFET is the registered trademark for International Rectifier Power MOSFETs)
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PVDZ172N Photovoltaic Relay
Electrical Specifications (-40C
T
A
=+85C unless otherwise specified
)
INPUT CHARACTERISTICS
Limits
Units
Min. Control Current (see Figures 1 and 2)
10
mA
Max. Control Current for Off-State Resistance @ T
A
=+25C
0.4
mA
Control Current Range (Caution: Current limit input LED, see Fig.6)
5.0 to 25
mA
Max. Reverse Voltage
7.0
V
OUTPUT CHARACTERISTICS
Operating Voltage Range
0 to 60
V(DC)
Max. Load Current 40
C (See Fig. 1 and 2)
1.5
A(DC)
Max. Pulsed Load Current @T
A
=+25C (100 ms @ 10% duty Cycle)
4.0
A(DC)
Max. Turn-On Time @T
A
=+25C (see Fig. 7)
2.0
ms
For 500mA, 50VDC Load, 10mA Control
Max. Turn-Off Time @TA=+25C (see Fig. 7)
0.5
ms
For 500mA, 50VDC Load, 10mA Control
Max. On State Resistance @TA=+25C(pulsed) (See Fig. 4)
250
m
1.0A Load, 10mA Control
Min. Off State Resistance @T
A
=+25C @ 48 VDC (see Fig. 5)
10
8
Ohms
Min. Off-State dv/dt
1000
V/
s
Output Capacitance (See Fig. 9)
150
pF @ 50 VDC
GENERAL CHARACTERISTICS
Limits
Units
Dielectric Strength, Input-Output
4000
V
(RMS)
Insulation Resistance, Input-Output , 90 V
DC
10
12
@T
A
=+25C - 50% RH
Capacitance, Input-Output
1.0
pF
Lead Temperature (1.6mm below seating plane) for 10 sec.
+260
C
Ambient Temperature Range:
Operating
-40 to +85
C
Storage
-40 to +100
C
(HEXFET is the registered trademark for International Rectifier Power MOSFETs)
Wiring Diagrams
Electromechanical
Analogy
Schematic
Anode
Cathode
Source
Drain
5
8
DC
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R
ECTIFIER
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PVDZ172N PhotoVoltaic Relay
Figure 2. Typical Control Current
Requirements
Figure 3. Typical On-Characteristics
Figure 5. Typical Normalized Off-State Leakage
Figure 6. Input Characteristics
(Current Controlled)
Figure 1. Current Derating Curves
Figure 4. Typical On-Resistance
0
M
a
x
.
Lo
a
d
C
u
r
r
e
nt (A)
Ambient Temperature (deg. C)
1. 8
1. 5
1. 2
0. 9
0. 6
0. 3
20
0
40
60
80
10 0
ILED = 10mA
ILED = 5mA (Typical)
LED Control Current (mA)
M
a
x
.
Lo
a
d
C
u
r
r
e
n
t (A)
0. 25
0
0. 50
0. 75
1. 00
1. 25
1. 50
1. 75
2. 00
1
5
4
3
2
+25 deg. C
+40 deg. C
+60 deg. C
+80 deg. C
1.4
Vds (V)
Lo
ad
C
u
r
r
en
t
(
A
)
1.6
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
0
0.2
0.3
0.4
0.5
ILED = 10mA
+25 deg. C
+60 deg. C
+80 deg. C
+40 deg. C
60
0
-40
0
20
40
80
100
-20
Ambient Temperature (deg. C)
250
50
100
150
200
300
350
400
R
d
-
on (
mOh
m)
Inp
ut Cu
r
r
e
n
t
(
m
A
)
LED Forward Voltage Drop (Volts DC)
16
20
12
8
4
0
0.5
1.0
1.5
2.0
0
CAUTION: provide current limiting
so that 25 mA maximum s teady-
state control current rating is
not exceeded
TYP
ICA
L
Min
.
de
v
i
c
e
a
nd
+8
5
deg.
C
limit
Ma
x.
dev
ic
e
a
nd
-40
d
eg.
C l
imit
Ambient Temperature (deg. C)
-35
-15
5
25
45
65
85
105
100
30
10
3.0
1.0
0.3
0.1
I
d
-
off/
I
d
-
o
f
f
2
5
d
eg. C
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Mechanical Specifications
(Dimensions in millimeters (inches)
Dimensions: mm (Inches)
Package Size: 8 Pin DIP
Tolerances: .015 (.38)
unless otherwise specified
Case Material: Molded epoxy
Weight: .07 oz. (2 grams)
Typica
l
C
a
p
acitan
c
e
(
p
F
)
Vds, Drain to Source Voltage (V)
10
0
20
30
40
50
1000
750
500
250
0
Figure 9. Typical Output Capacitance
LED
C
u
r
r
e
n
t
(
m
A
)
Delay Time (microseconds)
50
100
200
500
20
1000
2000
20
10
5
3
t
of f
dl y
t
on
t
Figure 7. Typical Delay Times
90 %
10 %
I
I
LE D
D
t
dl y
t
on
t
of f
Figure 8. Delay Time Definitions
PVDZ172N Photovoltaic Relay
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www/irf.com/
Data and specifications subject to change without notice.3/96
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ECTIFIER
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