Parameter
Max.
Units
V
DS
Drain- Source Voltage
-30
V
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ -10V
-8.0
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ -10V
-6.4
A
I
DM
Pulsed Drain Current
-50
P
D
@T
A
= 25C
Power Dissipation
2.5
P
D
@T
A
= 70C
Power Dissipation
1.6
Linear Derating Factor
0.02
W/C
V
GS
Gate-to-Source Voltage
20
V
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
10/14/99
Parameter
Max.
Units
R
JA
Maximum Junction-to-Ambient
50
C/W
Thermal Resistance
Absolute Maximum Ratings
W
www.irf.com
1
Si4435DY
HEXFET
Power MOSFET
These P-channel HEXFET
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance per
silicon area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
V
DSS
= -30V
R
DS(on)
= 0.020
Description
l
Ultra Low On-Resistance
l
P-Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
PD- 93768A
T o p V ie w
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
SO-8
Si4435DY
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.2
V
T
J
= 25C, I
S
= -2.5A, V
GS
= 0V
t
rr
Reverse Recovery Time
34
51
ns
T
J
= 25C, I
F
= -2.5A
Q
rr
Reverse Recovery Charge
33
50
nC
di/dt = -100A/s
Source-Drain Ratings and Characteristics
A
-50
-2.5
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width
300s; duty cycle
2%.
Surface mounted on FR-4 board, t
5sec.
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-30
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
-0.019
V/C
Reference to 25C, I
D
= -1mA
0.015 0.020
V
GS
= -10V, I
D
= -8.0A
0.026 0.035
V
GS
= -4.5V, I
D
= -5.0A
V
GS(th)
Gate Threshold Voltage
-1.0
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
11
S
V
DS
= -15V, I
D
= -8.0A
-10
V
DS
= -24V, V
GS
= 0V
-10
V
DS
= -15V, V
GS
= 0V, T
J
= 70C
Gate-to-Source Forward Leakage
-100
V
GS
= -20V
Gate-to-Source Reverse Leakage
100
V
GS
= 20V
Q
g
Total Gate Charge
40
60
I
D
= -4.6A
Q
gs
Gate-to-Source Charge
7.1
nC
V
DS
= -15V
Q
gd
Gate-to-Drain ("Miller") Charge
8.0
V
GS
= -10V
t
d(on)
Turn-On Delay Time
16
24
V
DD
= -15V, V
GS
= -10V
t
r
Rise Time
76
110
I
D
= -1.0A
t
d(off)
Turn-Off Delay Time
130
200
R
G
= 6.0
t
f
Fall Time
90
140
R
D
= 15
C
iss
Input Capacitance
2320
V
GS
= 0V
C
oss
Output Capacitance
390
pF
V
DS
= -15V
C
rss
Reverse Transfer Capacitance
270
= 1.0kHz
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
A
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Si4435DY
www.irf.com
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
-10V
-8.0A
0.1
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
-2.7V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-2.70V
0.1
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
-2.7V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-2.70V
1
10
100
2.0
3.0
4.0
5.0
6.0
V = -15V
20s PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
Si4435DY
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
10
20
30
40
50
60
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-4.6A
V
= -15V
DS
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
1
10
100
1000
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
DS
D
100us
1ms
10ms
1
10
100
0
500
1000
1500
2000
2500
3000
3500
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
Si4435DY
www.irf.com
5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
25
50
75
100
125
150
0.0
2.0
4.0
6.0
8.0
T , Case Temperature ( C)
-I , Drain Current (A)
C
D
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10. Typical Vgs(th) Variance Vs.
Juction Temperature
-50
-25
0
25
50
75
100
125
150
TJ , Temperature ( C )
-0.40
-0.30
-0.20
-0.10
0.00
0.10
0.20
-V
GS(th)
, Variace ( V )
Id = -250A
Si4435DY
6
www.irf.com
Fig 13. Typical On-Resistance Vs.
Drain Current
Fig 12. Typical On-Resistance Vs.
Gate Voltage
2
4
6
8
10
12
14
16
-VGS, Gate -to -Source Voltage ( V )
0.00
0.02
0.04
0.06
0.08
0.10
R
DS(on)
, Drain-to -Source Voltage (
)
Id = -8.0A
0
10
20
30
40
-ID , Drain Current ( A )
0.00
0.02
0.04
0.06
0.08
0.10
R
DS
( on) , Drain-to-Source On Resistance (
)
VGS = -10V
VGS= - 4.5V
Si4435DY
www.irf.com
7
SO-8 Package Details
SO-8
Part Marking
K x 45
C
8 X
L
8 X
H
0.25 (.010) M A M
A
0.10 (.004)
B 8 X
0.25 (.010) M C A S B S
- C -
6 X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
R E C O M M E N D E D F O O T P R I N T
0.72 (.028 )
8 X
1.78 (.070)
8X
6.46 ( .255 )
1.27 ( .050 )
3X
D I M
INCHES MILLIMETERS
MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
0 8 0 8
N O T E S :
1 . D I M E N S I O N I N G A N D T O L E R A N C I N G P E R A N S I Y 1 4 . 5 M - 1 9 8 2 .
2 . C O N T R O L L I N G D I M E N S I O N : I N C H .
3 . D I M E N S I O N S A R E S H O W N I N M I L L I M E T E R S ( I N C H E S ) .
4 . O U T L I N E C O N F O R M S T O J E D E C O U T L I N E M S - 0 1 2 A A .
D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S
M O L D P R O T R U S I O N S N O T T O E X C E E D 0 . 2 5 ( . 0 0 6 ) .
D I M E N S I O N S I S T H E L E N G T H O F L E A D F O R S O L D E R I N G T O A S U B S T R A T E . .
5
6
A 1
e 1
Si4435DY
8
www.irf.com
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 10/99
3 3 0 .0 0
( 1 2 .9 9 2 )
M A X .
1 4 .4 0 ( .5 66 )
1 2 .4 0 ( .4 88 )
N O T E S :
1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
F E E D D IR E C T IO N
T E R M IN A L N U M B E R 1
1 2 .3 ( .4 8 4 )
1 1 .7 ( .4 6 1 )
8 .1 ( .3 1 8 )
7 .9 ( .3 1 2 )
N O T E S :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ) .
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA - 5 4 1 .
SO-8
Tape and Reel
PDF 
ZIP