ChipFind - документация

Электронный компонент: ST2600C30R0L

Скачать:  PDF   ZIP
2630A
PHASE CONTROL THYRISTORS
Hockey Puk Version
ST2600C..R SERIES
1
Bulletin I25199 rev. B 02/00
www.irf.com
Features
Double side cooling
High surge capability
High mean current
Fatigue free
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
I
T(AV)
2220
A
@ T
C
80
C
I
T(AV)
2630
A
@ T
hs
55
C
I
T(RMS)
4800
A
@ T
hs
25
C
I
TSM
@
50Hz
46000
A
@
60Hz
48200
A
I
2
t
@
50Hz
10580
KA
2
s
@
60Hz
9640
KA
2
s
V
DRM
/V
RRM
2000 to 3000
V
t
q
typical
400
s
T
J
max.
125
C
Parameters
ST2600C..R
Units
Major Ratings and Characteristics
(R-PUK)
ST2600C..R Series
2
Bulletin I25199 rev. B 02/00
www.irf.com
Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ T
C
= 125C
V
V
mA
20
2000
2100
22
2200
2300
24
2400
2500
26
2600
2700
28
2800
2900
30
3000
3100
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Parameter
ST2600C..R
Units Conditions
Switching
di/dt
Max. repetitive 50Hz (no repetitive)
From 67% V
DRM
gate drive 20V, 20
, t
r
= 1s
rate of rise of turned-on current
T
J
= T
J
max.
Gate drive 30V, 15
,
V
d
= 67% V
DRM
,
T
J
= 25C
Rise time 0.5s
I
T
= 800A, t
p
= 1ms, T
J
= T
J
max, V
RM
= 50V,
dI
RR
/dt = 20A/s, V
DR
=
67% V
DRM
,
dV/dt
= 20V/s linear
150 (300)
A/s
s
t
q
Typical turn-off time
400
t
d
Maximum delay time
2.0
I
T(AV)
Max. average on-state current
2220 (1440)
A
@ Case temperature
80
C
I
T(AV)
Max. average on-state current
2630 (1160)
A
@ Heatsink temperature
55 (85)
C
I
T(RMS)
Max. RMS on-state current
4800
A
DC @ 25C heatsink temperature double side cooled
I
TSM
Max. peak, one-cycle
No voltage
non-repetitive surge current
reapplied
50% V
RRM
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
No voltage
Initial T
C
= 125C
reapplied
50% V
RRM
reapplied
V
T(TO)
Max. value of threshold voltage
0.89
V
T
J
= T
J
max.
r
t
Max. value of on-state slope
resistance
V
TM
Max. on-state voltage
1.45
V
I
pk
= 2900A, T
C
= 25C
I
L
Max. (typical) latching current
300 (100)
mA
T
J
= 25C, V
D
=
5V
Parameter
ST2600C..R
Units
Conditions
On-state Conduction
A
KA
2
s
m
180 conduction, half sine wave
double side (single side [anode side]) cooled
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
46000
48200
36800
38500
10580
9640
6770
6150
ST2600C..R
250
0.19
T
J
= T
J
max.
ST2600C..R Series
3
Bulletin I25199 rev. B 02/00
www.irf.com
dv/dt
Maximum linear rate of rise of
off-state voltage
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Blocking
500
V/s
T
J
= T
J
max. to 67% rated V
DRM
Parameter
ST2600C..R
Units
Conditions
250
mA
T
J
= 125C rated V
DRM
/V
RRM
applied
Triggering
P
GM
Maximum peak gate power
150
t
p
= 100s
P
G(AV)
Maximum average gate power
10
I
GM
Max. peak positive gate current
30
A
Anode positive with respect to cathode
V
GM
Max. peak positive gate voltage
30
V
Anode positive with respect to cathode
-V
GM
Max. peak negative gate voltage
0.25
V
Anode negative with respect to cathode
I
GT
Maximum DC gate current
required to trigger
V
GT
Maximum gate voltage required
to trigger
Parameter
ST2600C..R
Units
Conditions
W
400
mA
T
C
= 25C, V
DRM
= 5V
4
V
T
C
= 25C, V
DRM
= 5V
V
GD
DC gate voltage not to trigger
0.25
V
T
C
= 125C
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
180
0.0010
0.0010
T
J
= T
J
max.
120
0.0017
0.0017
K/W
60
0.0044
0.0044
R
thJ-C
Conduction
(The following table shows the increment of thermal resistence R
thJ-C
when devices operate at different conduction angles than DC)
Conduction angle
Single side
Double side
Units
Conditions
T
J
max. Max. operating temperature
125
On-state (conducting)
T
stg
Max. storage temperature range
-55 to 125
R
thJ-C
Thermal resistance, junction
0.019
DC operation single side cooled
to case
0.0095
DC operation double side cooled
R
th(C-h)
Thermal resistance, case
0.004
Single side cooled
to heatsink
0.002
Double side cooled
F
Mounting force 10%
wt
Approximate weight
1600
g
Case style
(R-PUK)
See Outline Table
Parameter
ST2600C..R
Units
Conditions
Thermal and Mechanical Specification
C
Clamping force 43KN with
mounting compound
43000
(4400)
N
(Kg)
K/W
K/W
ST2600C..R Series
4
Bulletin I25199 rev. B 02/00
www.irf.com
Ordering Information Table
Device Code
5
1
2
3
4
ST 260
0
C
30
R
1
7
6
8
1
-
Thyristor
2
-
Essential part number
3
-
0 = Converter grade
4
-
C = Ceramic Puk
5
-
Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6
-
R = Puk Case
7
-
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8
-
Critical dv/dt: None = 500V/sec (Standard selection)
L
= 1000V/sec (Special selection)
Outline Table
(R-PUK)
All dimensions in millimeters (inches)
112.5 (4.4) DIA. MAX.
73.2 (2.9) DIA. MAX.
TWO PLACES
GATE
1.5 (0.06) DIA.
3
7
.7
(
1
.5
)

M
A
X
.
ANODE
3.7 (0.15) DIA. NOM. X
2.1 (0.1) DEEP MIN.
BOTH ENDS
CATHODE
HOLE 1.5 (0.06)
DIA. MAX.
4.76 (0.2)
20 5
6 .3
(0
. 2
4 )
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
ST2600C..R Series
5
www.irf.com
Bulletin I25199 rev. B 02/00
Fig.5 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3- On-state Power Loss Characteristics
Fig. 4- On-state Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (

C)
Average On-state Current (A)
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Peak Half Sine Wave On-state Current (A)
Maximum Allowable Heatsink Temperature (

C)
20
30
40
50
60
70
80
90
100
110
120
130
0
1000
2000
3000
4000
60
120
180
Conduction Angle
DC
ST2600C..R Series
(Single Side Cooled)
R (DC) = 0.023 K/W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0
1000
2000
3000
4000
5000
60
120
180
Conduction Angle
DC
ST2600C..R Series
(Double Side Cooled)
R (DC) = 0.0115 K/W
thJ-hs
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
0
1000
2000
3000
4000
5000
RMS Limit
Conduction Angle
ST2600C..R Series
T = 125C
J
DC
180
120
60
100
1000
10000
0.5
1
1.5
2
2.5
3
T = 125C
J
ST2600C..R Series
10000
15000
20000
25000
30000
35000
40000
45000
1
10
100
ST2600C..R Series
Initial T = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
50% Rated V Applied Following Surge
RRM
J
30000
35000
40000
45000
50000
55000
60000
65000
70000
75000
1
10
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
ST2600C..R Series
Maximum Non Repetitive Surge Current
Initial T = 125C
J
50% Rated V Reapplied
RRM
ST2600C..R Series
6
www.irf.com
Bulletin I25199 rev. B 02/00
Fig. 7 - Stored Charged
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 11 - Gate Characteristics
Rate Of Decay Of On-state Current - di/dt (A/s)
Total Stroed Charge - Qrr (C)
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z
thJ-hs
(K/W)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
1000
10000
1
10
100
T = 125C
J
ST2600C..R Series
Q max.
Q min.
rr
rr
Q
rr
I
T
dI
I
(REC)
RM
t
dt
T
t = 3ms
p
0.0001
0.001
0.01
0.1
0.001
0.01
0.1
1
10
100
Steady State Value
R = 0.019 K/W
(Single Side Cooled)
R = 0.0095 K/W
(Double Side Cooled)
(DC Operation)
thJ-C
thJ-C
ST2600C..R Series
0.1
1
10
100
0.001
0.01
0.1
1
10
VGD
IGD
T
j
=25

C
T
j
=125

C
Tj
=-
4
0


C
(1)
(2)
Frequency Limited by PG(AV)
(1) PGM = 2W
(2) PGM = 4W
(3) PGM = 8W
(4) PGM = 20W
(5) PGM = 50W
(6) PGM =100W
Device: ST2600C..R Series
(3)
(4)
(5)
(6)