500A
PHASE CONTROL THYRISTORS
Hockey Puk Version
ST280C..C SERIES
1
Bulletin I25159 rev. C 02/00
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Features
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
I
T(AV)
500
A
@ T
hs
55
C
I
T(RMS)
960
A
@ T
hs
25
C
I
TSM
@
50Hz
7850
A
@ 60Hz
8220
A
I
2
t
@
50Hz
308
KA
2
s
@ 60Hz
281
KA
2
s
V
DRM
/V
RRM
400 to 600
V
t
q
typical
100
s
T
J
- 40 to 125
C
Parameters
ST280C..C
Units
Major Ratings and Characteristics
case style TO-200AB (A-PUK)
ST280C..C Series
2
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Bulletin I25159 rev. C 02/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ T
J
= T
J
max
V
V
mA
04
400
500
06
600
700
I
T(AV)
Max. average on-state current
500 (185)
A
180 conduction, half sine wave
@ Heatsink temperature
55 (85)
C
double side (single side) cooled
I
T(RMS)
Max. RMS on-state current
960
DC @ 25C heatsink temperature double side cooled
I
TSM
Max. peak, one-cycle
7850
t = 10ms
No voltage
non-repetitive surge current
8220
A
t = 8.3ms
reapplied
6600
t = 10ms
100% V
RRM
6900
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
308
t = 10ms
No voltage
Initial T
J
= T
J
max.
281
t = 8.3ms
reapplied
218
t = 10ms
100% V
RRM
200
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
3080
KA
2
s t = 0.1 to 10ms, no voltage reapplied
V
T(TO) 1
Low level value of threshold
voltage
V
T(TO) 2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage
1.36
V
I
pk
= 1050A, T
J
= 125C, t
p
= 10ms sine pulse
I
H
Maximum holding current
600
I
L
Max. (typical) latching current
1000 (300)
0.84
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
0.50
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
0.47
(I >
x I
T(AV)
),T
J
= T
J
max.
Parameter
ST280C..C
Units Conditions
0.88
(I >
x I
T(AV)
),T
J
= T
J
max.
On-state Conduction
KA
2
s
V
m
mA
T
J
= 25 C, anode supply 12V resistive load
di/dt
Max. non-repetitive rate of rise
Gate drive 20V, 20
, t
r
1s
of turned-on current
T
J
= T
J
max, anode voltage
80% V
DRM
Gate current 1A, di
g
/dt = 1A/s
V
d
= 0.67% V
DRM
,
T
J
= 25C
I
TM
= 300A, T
J
= T
J
max, di/dt
= 20A/s, V
R
= 50V
dv/dt
= 20V/s, Gate 0V 100
, t
p
= 500s
Parameter
ST280C..C
Units Conditions
Switching
1000
A/s
t
d
Typical delay time
1.0
t
q
Typical turn-off time
100
s
ST280C..C
30
ST280C..C Series
3
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Bulletin I25159 rev. C 02
P
GM
Maximum peak gate power
10.0
T
J
= T
J
max, t
p
5ms
P
G(AV)
Maximum average gate power
2.0
T
J
= T
J
max, f = 50Hz, d% = 50
I
GM
Max. peak positive gate current
3.0
A
T
J
= T
J
max, t
p
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
T
J
= - 40C
mA
T
J
= 25C
T
J
= 125C
T
J
= - 40C
V
T
J
= 25C
T
J
= 125C
I
GD
DC gate current not to trigger
10
mA
Parameter
ST280C..C
Units Conditions
20
5.0
Triggering
TYP.
MAX.
180
-
90
150
40
-
2.9
-
1.8
3.0
1.2
-
V
GD
DC gate voltage not to trigger
0.30
V
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
T
J
= T
J
max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
V
GT
DC gate voltage required
to trigger
I
GT
DC gate current required
to trigger
W
V
T
J
= T
J
max, t
p
5ms
T
J
Max. operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 150
R
thJ-hs
Max. thermal resistance,
0.17
DC operation single side cooled
junction to heatsink
0.08
DC operation double side cooled
R
thC-hs
Max. thermal resistance,
0.033
DC operation single side cooled
case to heatsink
0.017
DC operation double side cooled
F
Mounting force, 10%
4900
N
(500)
(Kg)
wt
Approximate weight
50
g
Parameter
ST280C..C
Units
Conditions
K/W
Thermal and Mechanical Specification
C
Case style
TO - 200AB (A-PUK)
See Outline Table
K/W
dv/dt
Maximum critical rate of rise of
off-state voltage
I
DRM
Max. peak reverse and off-state
I
RRM
leakage current
Blocking
500
V/
s T
J
= T
J
max. linear to 80% rated V
DRM
Parameter
ST280C..C
Units Conditions
30
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
ST280C..C Series
4
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Bulletin I25159 rev. C 02/00
Ordering Information Table
R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Device Code
5
1
2
3
4
ST
28
0
C
06
C
1
7
6
8
Single Side Double Side
Single Side
Double Side
180
0.016
0.016
0.011
0.011
T
J
= T
J
max.
120
0.019
0.019
0.019
0.019
90
0.024
0.024
0.026
0.026
K/W
60
0.035
0.035
0.036
0.037
30
0.060
0.060
0.060
0.061
Sinusoidal conduction
Rectangular conduction
Conduction angle
Units
Conditions
1
-
Thyristor
2
-
Essential part number
3
-
0 = Converter grade
4
-
C = Ceramic Puk
5
-
Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6
-
C = Puk Case TO-200AB (A-PUK)
7
-
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8
-
Critical dv/dt: None = 500V/sec (Standard selection)
L
= 1000V/sec (Special selection)
ST280C..C Series
5
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Bulletin I25159 rev. C 02
Outline Table
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
DIA. MAX.
4.75 (0.19)
28 (1.10)
6.5 (0.26)
19 (0.75)
0.3 (0.01) MIN.
0.3 (0.01) MIN.
13.7 / 14.4
(0.54 / 0.57)
25 5
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
42 (1.65) MAX.
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (
C)
Maximum Allowable Heatsink Temperature (
C)
Average On-state Current (A)
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
1 3 0
0
5 0
1 0 0 1 5 0 2 0 0 2 5 0 3 0 0 3 5 0
30
60
90
1 2 0
1 8 0
Conduction Angle
S T 2 8 0 C . . C S e r i e s
(Single Side Cooled)
R (DC) = 0.17 K/W
thJ-hs
2 0
3 0
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
1 3 0
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
D C
30
60
90
1 2 0
1 8 0
Conduction Period
S T 2 8 0 C . . C S e r i e s
(Single Side Cooled)
R (DC) = 0.17 K/W
thJ-hs
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
ST280C..C Series
6
Bulletin I25159 rev. C 02/00
www.irf.com
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5- On-state Power Loss Characteristics
Fig. 6- On-state Power Loss Characteristics
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (
C)
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (
C)
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (
C)
Maximum Allowable Heatsink Temperature (
C)
Average On-state Current (A)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Peak Half Sine Wave On-state Current (A)
2 0
3 0
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
1 3 0
0
1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0
30
60
90
1 2 0
1 8 0
Conduction Angle
S T 2 8 0 C . . C S e r i e s
(Double Side Cooled)
R (DC) = 0.08 K/W
thJ-hs
2 0
3 0
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
1 3 0
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
D C
30
60
90
1 2 0
1 8 0
Conduction Period
S T 2 8 0 C . . C S e r i e s
(Double Side Cooled)
R (DC) = 0.08 K/W
thJ-hs
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
7 0 0
8 0 0
9 0 0
1 0 0 0
0
1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0
1 8 0
1 2 0
90
60
30
RMS Limit
Conduction Angle
S T 2 8 0 C . . C S e r i e s
T = 125C
J
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
7 0 0
8 0 0
9 0 0
1 0 0 0
1 1 0 0
1 2 0 0
1 3 0 0
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
D C
1 8 0
1 2 0
90
60
30
RMS Limit
Conduction Period
S T 2 8 0 C . . C S e r i e s
T = 125C
J
3 0 0 0
3 5 0 0
4 0 0 0
4 5 0 0
5 0 0 0
5 5 0 0
6 0 0 0
6 5 0 0
7 0 0 0
1
1 0
1 0 0
Initial T = 125C
@ 6 0 H z 0 . 0 0 8 3 s
@ 5 0 H z 0 . 0 1 0 0 s
J
S T 2 8 0 C . . C S e r i e s
A t A n y R a t e d L o a d C o n d i t i o n A n d W i t h
R a t e d V A p p l i e d F o l l o w i n g S u r g e .
R R M
3 0 0 0
3 5 0 0
4 0 0 0
4 5 0 0
5 0 0 0
5 5 0 0
6 0 0 0
6 5 0 0
7 0 0 0
7 5 0 0
8 0 0 0
0.01
0.1
1
V e r s u s P u l s e T r a i n D u r a t i o n . C o n t r o l
S T 2 8 0 C . . C S e r i e s
M a x i m u m N o n R e p e t i t i v e S u r g e C u r r e n t
O f C o n d u c t i o n M a y N o t B e M a i n t a i n e d .
Initial T = 125C
N o V o l t a g e R e a p p l i e d
R a t e d V R e a p p l i e d
R R M
J
ST280C..C Series
7
Bulletin I25159 rev. C 02/00
www.irf.com
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 11 - Gate Characteristics
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z (K/W)
thJ-hs
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
1 0 0
1 0 0 0
1 0 0 0 0
0.5
1
1.5
2
2.5
3
3.5
4
T = 25C
J
T = 125C
J
S T 2 8 0 C . . C S e r i e s
0 . 0 0 1
0.01
0.1
1
0.001
0.01
0.1
1
1 0
S T 2 8 0 C . . C S e r i e s
Steady State Value
R = 0.17 K/W
(Single Side Cooled)
R = 0.08 K/W
(Double Side Cooled)
(DC Operation)
thJ-hs
thJ-hs
0.1
1
1 0
1 0 0
0.001
0.01
0.1
1
1 0
1 0 0
V G D
IG D
(b )
( a)
T
j
=
25
C
Tj
=
1
2
5
C
Tj
=
-
4
0
C
( 1 ) (2) (3)
a ) R e c o m m e n d e d l o a d l i n e f o r
b ) R e c o m m e n d e d l o a d l i n e f o r
< = 3 0 % r a t e d d i / d t : 1 0 V , 1 0 o h m s
F r e q u e n c y L i m i t e d b y P G ( A V )
r a t e d d i / d t : 2 0 V , 1 0 o h m s ; t r < = 1 s
tr<=1 s
( 1 ) P G M = 1 0 W , t p = 4 m s
( 2 ) P G M = 2 0 W , t p = 2 m s
( 3 ) P G M = 4 0 W , t p = 1 m s
( 4 ) P G M = 6 0 W , t p = 0 . 6 6 m s
R e c t a n g u l a r g a t e p u l s e
D e v i c e : S T 2 8 0 C . . C S e r i e s
(4)
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