620A
INVERTER GRADE THYRISTORS
Puk Version
ST303C..C SERIES
1
Bulletin I25172 rev. B 04/00
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case style TO-200AB (E-PUK)
Features
Metal case with ceramic insulator
International standard case TO-200AB (E-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
(*) t
q
= 10 to 20s for 400 to 800V devices
t
q
= 15 to 30s for 1000 to 1200V devices
I
T(AV)
620
A
@ T
hs
55
C
I
T(RMS)
1180
A
@ T
hs
25
C
I
TSM
@
50Hz
7950
A
@ 60Hz
8320
A
I
2
t
@
50Hz
316
KA
2
s
@ 60Hz
289
KA
2
s
V
DRM
/V
RRM
400 to 1200
V
t
q
range (*)
10 to 30
s
T
J
- 40 to 125
C
Parameters
ST303C..C
Units
ST303C..C Series
2
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Bulletin I25172 rev. B 04/00
Voltage
V
DRM
/V
RRM
, maximum
V
RSM
, maximum
I
DRM
/I
RRM
max.
Type number
Code
repetitive peak voltage
non-repetitive peak voltage
@ T
J
= T
J
max.
V
V
mA
04
400
500
08
800
900
10
1000
1100
12
1200
1300
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Frequency
Units
50Hz
1314
1130
2070
1940
6930
6270
400Hz
1260
1040
2190
1880
3440
2960
1000Hz
900
700
1900
1590
1850
1540
A
2500Hz
340
230
910
710
740
560
Recovery voltage Vr
50
50
50
50
50
50
Voltage before turn-on Vd
V
DRM
V
DRM
V
DRM
Rise of on-state current di/dt
50
50
-
-
-
-
A/
s
Heatsink temperature
40
55
40
55
40
55
C
Equivalent values for RC circuit
10
/ 0.47F
10
/ 0.47F
10
/ 0.47F
I
TM
180
o
el
180
o
el
100
s
I
TM
I
TM
Current Carrying Capability
V
ST303C..C
50
I
T(AV)
Max. average on-state current
620 (230)
A
180 conduction, half sine wave
@ Heatsink temperature
55 (85)
C
double side (single side) cooled
I
T(RMS)
Max. RMS on-state current
1180
DC @ 25C heatsink temperature double side cooled
I
TSM
Max. peak, one half cycle,
7950
t = 10ms
No voltage
non-repetitive surge current
8320
A
t = 8.3ms
reapplied
6690
t = 10ms
100% V
RRM
7000
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
316
t = 10ms
No voltage
Initial T
J
= T
J
max
289
t = 8.3ms
reapplied
224
t = 10ms
100% V
RRM
204
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
3160
KA
2
s t = 0.1 to 10ms, no voltage reapplied
Parameter
ST303C..C
Units
Conditions
On-state Conduction
KA
2
s
ST303C..C Series
3
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Bulletin I25172 rev. B 04/00
V
TM
Max. peak on-state voltage
2.16
I
TM
= 1255A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
Low level value of forward
slope resistance
r
t
2
High level value of forward
slope resistance
I
H
Maximum holding current
600
T
J
= 25C, I
T
> 30A
I
L
Typical latching current
1000
T
J
= 25C, V
A
= 12V, Ra = 6
, I
G
= 1A
Parameter
ST303C..C
Units
Conditions
On-state Conduction
1.44
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
V
0.56
(I >
x I
T(AV)
), T
J
= T
J
max.
m
mA
di/dt
Max. non-repetitive rate of rise
T
J
= T
J
max, V
DRM
= rated V
DRM
of turned-on current
I
TM
= 2 x di/dt
T
J
= 25C, V
DM
= rated V
DRM
,
I
TM
= 50A DC, t
p
= 1s
Resistive load, Gate pulse: 10V, 5
source
T
J
= T
J
max,
I
TM
= 550A, commutating di/dt
= 40A/s
V
R
= 50V, t
p
= 500s, dv/dt: see table in device code
Switching
Parameter
ST303C..C
Units
Conditions
1000
A/s
t
d
Typical delay time
0.83
Min
Max
dv/dt
Maximum critical rate of rise of
T
J
= T
J
max. linear to 80% V
DRM
, higher value
off-state voltage
available on request
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Parameter
ST303C..C
Units
Conditions
Blocking
500
V/
s
50
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
60
P
G(AV)
Maximum average gate power
10
I
GM
Max. peak positive gate current
10
A
T
J
= T
J
max, t
p
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
to trigger
V
GT
Max. DC gate voltage required
to trigger
I
GD
Max. DC gate current not to trigger
20
mA
V
GD
Max. DC gate voltage not to trigger
0.25
V
Triggering
Parameter
ST303C..C
Units
Conditions
20
5
V
T
J
= T
J
max, t
p
5ms
200
mA
3
V
s
t
q
Max. turn-off time (*)
10
30
W
T
J
= T
J
max, f = 50Hz, d% = 50
(*) t
q
= 10 to 20s for 400 to 800V devices; t
q
= 15 to 30s for 1000 to 1200V devices.
1.48
(I >
x I
T(AV)
), T
J
= T
J
max.
0.57
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
T
J
= T
J
max, rated V
DRM
applied
T
J
= 25C, V
A
= 12V, Ra = 6
ST303C..C Series
4
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Bulletin I25172 rev. B 04/00
Ordering Information Table
5
6
8
9
ST
30
3
C
12
C
H
K
1
3
4
7
Device Code
1
2
10
1
- Thyristor
2
- Essential part number
3
- 3 = Fast turn off
4
- C = Ceramic Puk
5
- Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6
- C = Puk Case TO-200AB (E-PUK)
7
- Reapplied dv/dt code (for t
q
test condition)
8
- t
q
code
9
- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
- Critical dv/dt:
None = 500V/sec (Standard value)
L
= 1000V/sec (Special selection)
only for
1000/1200V
up to 800V
dv/dt - t
q
combinations available
dv/dt (V/s)
20
50
100
200
400
t
q
(s)
10
CN
DN
EN
FN * HN
12
CM
DM
EM
FM
HM
15
CL
DL
EL
FL *
HL
20
CK
DK
EK
FK *
HK
t
q
(s)
15
CL
--
--
--
--
18
CP
DP
--
--
--
20
CK
DK
EK
FK *
HK
25
CJ
DJ
EJ
FJ *
HJ
30
--
DH
EH
FH
HH
10
*
Standard part number.
All other types available only on request.
T
J
Max. operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 150
R
thJ-hs
Max. thermal resistance,
0.09
DC operation single side cooled
junction to heatsink
0.04
DC operation double side cooled
R
thC-hs
Max. thermal resistance,
0.020
DC operation single side cooled
case to heatsink
0.010
DC operation double side cooled
F
Mounting force, 10%
9800
N
(1000)
(Kg)
wt
Approximate weight
83
g
Parameter
ST303C..C
Units
Conditions
K/W
Thermal and Mechanical Specification
C
K/W
Case style
TO - 200AB (E-PUK)
See Outline Table
Single Side Double Side
Single Side Double Side
180
0.010
0.010
0.007
0.007
120
0.012
0.012
0.012
0.013
90
0.015
0.015
0.016
0.017
K/W
T
J
= T
J
max.
60
0.022
0.022
0.023
0.023
30
0.036
0.036
0.036
0.037
Sinusoidal conduction
Rectangular conduction
Conduction angle
Units
Conditions
R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
ST303C..C Series
5
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Bulletin I25172 rev. B 04/00
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
2 0
3 0
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
1 3 0
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
7 0 0
D C
3 0
6 0
9 0
1 2 0
1 8 0
A v e ra g e O n -st a t e C u rre n t ( A )
C o nd u ctio n Pe rio d
M
a
xi
m
u
m
A
l
l
o
w
a
bl
e
He
at
s
i
n
k
T
e
m
p
e
r
at
u
r
e
(
C
)
S T 3 0 3 C ..C Se rie s
( S in g le Sid e C o o le d )
R ( D C ) = 0 .0 9 K / W
th J-hs
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
1 3 0
0
5 0
1 0 0 1 5 0 2 0 0 2 5 0 3 0 0 3 5 0 4 0 0
3 0
6 0
9 0
1 2 0
1 8 0
A v e ra g e O n -st a t e C u rre n t ( A )
C o nd uc tio n A ng le
M
a
x
i
m
u
m
A
l
l
o
w
a
bl
e
He
at
s
i
n
k
T
e
m
p
e
r
at
u
r
e
(
C)
ST 3 0 3 C ..C S e rie s
( Sin g le S id e C o o le d )
R ( D C ) = 0 .0 9 K / W
thJ -hs
Outline Table
Case Style TO-200AB (E-PUK)
All dimensions in millimeters (inches)
DIA. MAX.
4.75 (0.19)
28 (1.10)
6.5 (0.26)
0.3 (0.01) MIN.
0.3 (0.01) MIN.
ANODE TO GATE
CREEPAGE DISTANCE: 11.18 (0.44) MIN.
STRIKE DISTANCE: 7.62 (0.30) MIN.
25.3 (0.99)
14.1 / 15.1
(0.56 / 0.59)
25 5
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
25.3 (0.99)
40.5 (1.59) DIA. MAX.
DIA. MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
42 (1.65) MAX.
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
ST303C..C Series
6
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Bulletin I25172 rev. B 04/00
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-state Power Loss Characteristics
Fig. 6 - On-state Power Loss Characteristics
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
2 0
3 0
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
1 3 0
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1 2 0 0
D C
3 0
6 0
9 0
1 2 0
1 8 0
A v e ra g e O n -st a t e C u rre n t ( A )
C o nd uc tio n P e rio d
M
a
x
i
m
u
m
A
l
l
o
w
a
bl
e
He
at
s
i
n
k
T
e
m
p
e
r
a
t
u
r
e
(
C)
S T 3 0 3 C ..C Se rie s
( D o ub le S id e C o o le d )
R ( D C ) = 0 .0 4 K / W
th J -hs
2 0
3 0
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
1 3 0
0
1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0
3 0
6 0
9 0
1 2 0
1 8 0
A v e ra g e O n -st a t e C u rre n t ( A )
Co nd uc tio n A ng le
M
a
xi
m
u
m
A
l
l
o
w
a
bl
e
He
at
s
i
n
k
T
e
m
p
e
r
at
u
r
e
(
C)
ST 3 0 3 C ..C S e rie s
(D o u b le S id e C o o le d )
R ( D C ) = 0 .0 4 K / W
thJ -hs
0
4 0 0
8 0 0
1 2 0 0
1 6 0 0
2 0 0 0
2 4 0 0
2 8 0 0
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1 2 0 0
D C
1 8 0
1 2 0
9 0
6 0
3 0
R M S L im it
Co nd uc tio n Pe rio d
M
a
x
i
mu
m A
v
e
r
a
g
e
O
n
-
s
t
a
t
e
P
o
w
e
r
L
o
s
s
(
W
)
A v e ra g e O n -st a te C u rre n t ( A )
ST 3 0 3 C ..C S e rie s
T = 1 2 5 C
J
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1 2 0 0
1 4 0 0
1 6 0 0
1 8 0 0
2 0 0 0
0
1 0 0 2 0 0 3 0 0 4 0 0
5 0 0 6 0 0 7 0 0 8 0 0
1 8 0
1 2 0
9 0
6 0
3 0
R M S L im it
C o nd uc tio n An g le
M
a
x
i
mu
m A
v
e
r
a
g
e
O
n
-
s
t
a
t
e
P
o
w
e
r
L
o
s
s
(
W
)
A v e ra g e O n - st a te C u rre n t ( A )
S T 3 0 3 C ..C Se rie s
T = 1 2 5 C
J
30 0 0
35 0 0
40 0 0
45 0 0
50 0 0
55 0 0
60 0 0
65 0 0
70 0 0
75 0 0
1
1 0
1 00
N um b e r O f E q ua l A m p litud e H a lf C y c le C urre nt Pulse s (N )
P
e
ak
Hal
f
S
i
n
e
W
a
v
e
O
n
-
s
t
a
t
e
C
u
r
r
e
n
t
(
A
)
In itial T = 125 C
@ 6 0 Hz 0.0083 s
@ 5 0 Hz 0.0100 s
J
ST30 3C..C Ser ies
At An y Rated L oad Con dition And W ith
Rated V Applied Followin g Surge.
RRM
3 0 00
3 5 00
4 0 00
4 5 00
5 0 00
5 5 00
6 0 00
6 5 00
7 0 00
7 5 00
8 0 00
0.0 1
0 .1
1
P u ls e Tr a in D u ra t io n ( s)
V e r su s P u lse T ra in D ura t io n . C o n tro l
O f C o n d u c tio n M a y N o t B e M a in t a in e d .
P
e
ak
Hal
f
S
i
n
e
W
a
v
e
O
n
-
s
t
a
t
e
C
u
r
r
e
n
t
(
A
)
In it ia l T = 1 2 5 C
N o V o lt a g e R e a pp lie d
R a te d V R e a p p lie d
RRM
J
ST 3 0 3 C ..C Se rie s
M a x im u m N o n R e p e t it iv e Su rg e C u rre n t
ST303C..C Series
7
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Bulletin I25172 rev. B 04/00
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
Fig. 13 - Frequency Characteristics
1 0 0
1 0 0 0
1 00 0 0
0
1
2
3
4
5
6
7
8
T = 2 5C
J
In
st
a
n
t
a
n
e
o
u
s O
n
-
s
t
a
t
e
C
u
rr
e
n
t
(
A
)
Ins tan taneous O n-state Volta ge (V )
T = 1 25 C
J
ST 303 C..C Series
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
1 8 0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
8 0
9 0 1 0 0
M
a
x
i
m
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
u
rre
n
t
-
I
rr
(
A
)
R a te O f Fa ll O f Fo rw a rd C ur re n t - d i/ d t ( A / s)
I = 5 00 A
3 00 A
20 0 A
1 00 A
50 A
T M
ST 3 0 3 C ..C S e r ie s
T = 1 2 5 C
J
0 .0 0 1
0 .0 1
0 .1
0 .0 0 1
0 .0 1
0 .1
1
1 0
Sq u a re W a v e Pu lse D u ra tio n ( s)
th
J
-
h
s
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
Z
(
K
/
W
)
S T 3 0 3 C ..C Se rie s
St e a d y S ta t e V a lue
R = 0 .0 9 K / W
( Sin g le S id e C o o le d )
R = 0 .0 4 K / W
( D o u b le Sid e C o o le d )
( D C O p e ra t io n )
th J- hs
t hJ -hs
8 0
1 0 0
1 2 0
1 4 0
1 6 0
1 8 0
2 0 0
2 2 0
2 4 0
2 6 0
2 8 0
3 0 0
3 2 0
1 0
2 0
3 0
40
5 0
60
7 0
8 0
9 0 1 0 0
I = 50 0 A
3 00 A
20 0 A
10 0 A
5 0 A
Rate O f Fall O f O n-state Current - di/dt (A/s)
M
a
x
i
m
u
m
R
e
ve
rse
R
e
c
o
ve
ry
C
h
a
r
g
e
-
Q
rr
(
C
)
TM
ST303 C..C Series
T = 1 25 C
J
1 E 1
1 E 2
1 E 3
1 E 4
5 0 H z
40 0
25 00
10 0
P u lse B ase w idt h ( s)
10 00
1 5 00
3 00 0
20 0
500
Snub b e r c ircu it
R = 1 0 o hm s
C = 0.4 7 F
V = 80 % V
s
s
D
D RM
ST30 3C ..C S erie s
Sinus o id a l p uls e
T = 5 5C
C
2 0 00
tp
1 E 1
1 E 2
1 E 3
1 E 4
1 E 1
1 E 2
1 E 3
1 E 4
50 H z
4 00
2 50 0
10 0
P u lse Ba se w id t h ( s)
P
e
a
k
O
n
-
s
ta
te
C
u
r
r
e
n
t
(
A
)
10 00
1 50 0
3 00 0
2 00
5 00
Sn ub b e r circ uit
R = 1 0 o hm s
C = 0 .47 F
V = 8 0 % V
s
s
D
D RM
ST30 3C ..C Se ries
Sin uso id a l p uls e
T = 40C
C
2 00 0
tp
1 E 4
ST303C..C Series
8
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Bulletin I25172 rev. B 04/00
Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
1 E 2
1 E 3
1 E 4
1 E 1
1 E 2
1 E 3
1 E 4
5 0 H z
40 0
2 50 0
1 00
10 0 0
15 0 0
2 00 0
30 00
20 0
5 00
P u lse Ba se w id t h ( s)
P
e
a
k
O
n
-
s
ta
te
C
u
r
r
e
n
t
(
A
)
Snub b e r c irc uit
R = 1 0 o hm s
C = 0.47 F
V = 8 0% V
s
s
D
D RM
ST3 03C ..C Serie s
Tra p e zo id a l p ulse
T = 40 C
d i/d t = 100 A/s
C
tp
1 E 4
1 E 2
1 E 3
1 E 4
1 E 1
1 E 2
1 E 3
1 E 4
50 H z
4 00
2 50 0
100
100 0
1 50 0
2 00 0
3 00 0
20 0
50 0
P ulse B a se w id th ( s)
P
e
a
k
O
n
-
s
t
a
t
e
C
u
rre
n
t
(
A
)
Snub b er circuit
R = 10 o hm s
C = 0.4 7 F
V = 80 % V
s
s
D
D RM
ST303 C. .C Se ries
Tra p ezo id a l p uls e
T = 40 C
d i/d t = 50 A/s
C
t p
1 E 4
1 E 1
1 E 2
1 E 3
1 E 4
50 H z
4 00
2 50 0
100
Pu lse B a se w id th ( s)
1 00 0
1 50 0
20 00
200
5 00
ST30 3C ..C Se rie s
Tra p e zoid a l p ulse
T = 55C
d i/d t = 1 00 A/s
C
Snub b e r circuit
R = 1 0 o hm s
C = 0.47 F
V = 80 % V
s
s
D
D R M
tp
3 00 0
1 E 1
1 E 1
1 E 2
1 E 3
1 E 4
5 0 H z
40 0
2 50 0
1 00
P ulse Ba se w id th ( s)
1 00 0
1 50 0
2 00 0
20 0
5 00
ST303 C. .C Se ries
Tra p ezo id a l p uls e
T = 5 5C
d i/d t = 5 0A / s
C
Snu b b e r c irc uit
R = 1 0 o hm s
C = 0 .47 F
V = 8 0% V
s
s
D
D RM
30 00
1 E 1
tp
1 E 1
1 E 2
1 E 3
1 E 4
1 E 5
1 E 1
1 E 2
1 E 3
1 E 4
P ulse Ba se w id th ( s)
2 0 jo ule s p er p ulse
2
1
0. 5
10
5
P
e
a
k
O
n
-
s
ta
te
C
u
r
r
e
n
t
(
A
)
3
ST3 03C ..C Serie s
Sinus oid a l p ulse
0.4
tp
1 E 4 1 E 1
1 E 2
1 E 3
1 E 4
P u lse B a se w id th ( s)
2 0 jo ule s p e r p uls e
2
1
0 .5
ST30 3C. .C Se ries
Re cta ngu la r p u ls e
d i/d t = 50 A/s
10
5
3
0.4
tp
1 E 1
ST303C..C Series
9
www.irf.com
Bulletin I25172 rev. B 04/00
Fig. 17 - Gate Characteristics
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VGD
IGD
(b)
(a)
T
j
=
25
C
Tj
=
1
2
5
C
Tj
=
-
4
0
C
(1)
(2)
Instantaneous Gate Current (A)
I
n
st
a
n
t
a
n
e
o
u
s G
a
t
e
V
o
l
t
a
g
e
(
V
)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
rated di/dt : 20V, 10ohms; tr<=1 s
tr<=1 s
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(3)
Device: ST303C..C Series Frequency Limited by PG(AV)
(4)
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