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Features
Center amplifying gate
High surge current capability
Low thermal impedance
High speed performance
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
I
T(AV)
330
A
@ T
C
75
C
I
T(RMS)
518
A
I
TSM
@
50Hz
11000
A
@ 60Hz
11520
A
I
2
t
@
50Hz
605
KA
2
s
@ 60Hz
550
KA
2
s
V
DRM
/V
RRM
400 to 800
V
t
q
15
s
T
J
- 40 to 125
C
Parameters
ST333S
Units
Major Ratings and Characteristics
case style
TO-209AE (TO-118)
ST333S SERIES
INVERTER GRADE THYRISTORS
Stud Version
330A
Bulletin I25171 rev. D 03/03
1
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ST333S Series
2
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Bulletin I25171 rev. D 03/03
Voltage
V
DRM
/V
RRM
, maximum
V
RSM
, maximum
I
DRM
/I
RRM
max.
Type number
Code
repetitive peak voltage
non-repetitive peak voltage
@ T
J
= T
J
max.
V
V
mA
04
400
500
08
800
900
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Frequency
Units
50Hz
840
600
1280
1040
5430
4350
400Hz
650
450
1280
910
2150
1560
1000Hz
430
230
1090
730
1080
720
A
2500Hz
140
60
490
250
400
190
Recovery voltage Vr
50
50
50
50
50
50
Voltage before turn-on Vd
V
DRM
V
DRM
V
DRM
Rise of on-state current di/dt
50
50
-
-
-
-
A/
s
Case temperature
50
75
50
75
50
75
C
Equivalent values for RC circuit
10
/ 0.47F
10
/ 0.47F
10
/ 0.47F
I
TM
180
o
el
180
o
el
100
s
I
TM
I
TM
Current Carrying Capability
V
I
T(AV)
Max. average on-state current
330
A
180 conduction, half sine wave
@ Case temperature
75
C
I
T(RMS)
Max. RMS on-state current
518
DC @ 63C case temperature
I
TSM
Max. peak, one half cycle,
11000
t = 10ms
No voltage
non-repetitive surge current
11520
A
t = 8.3ms
reapplied
9250
t = 10ms
100% V
RRM
9700
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
605
t = 10ms
No voltage
Initial T
J
= T
J
max
550
t = 8.3ms
reapplied
430
t = 10ms
100% V
RRM
390
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
6050
KA
2
s
t = 0.1 to 10ms, no voltage reapplied
Parameter
ST333S
Units Conditions
On-state Conduction
KA
2
s
ST333S
50
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ST333S Series
3
Bulletin I25171 rev. D 03/03
V
TM
Max. peak on-state voltage
1.96
I
TM
= 1810A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
Low level value of forward
slope resistance
r
t
2
High level value of forward
slope resistance
I
H
Maximum holding current
600
T
J
= 25C, I
T
> 30A
I
L
Typical latching current
1000
T
J
= 25C, V
A
= 12V, Ra = 6
,
I
G
= 1A
Parameter
ST333S
Units
Conditions
On-state Conduction
0.91
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
0.92
(I >
x I
T(AV)
), T
J
= T
J
max.
V
0.58
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
0.58
(I >
x I
T(AV)
), T
J
= T
J
max.
m
mA
di/dt
Max. non-repetitive rate of rise
T
J
= T
J
max, V
DRM
= rated V
DRM
of turned-on current
I
TM
= 2 x di/dt
T
J
= 25C, V
DM
= rated V
DRM
,
I
TM
= 50A DC, t
p
= 1s
Resistive load, Gate pulse: 10V, 5
source
T
J
= T
J
max,
I
TM
= 550A, commutating di/dt
= 40A/s
V
R
= 50V, t
p
= 500s, dv/dt = 200V/s
Switching
Parameter
ST333S
Units
Conditions
1000
A/s
t
d
Typical delay time
1.0
dv/dt
Maximum critical rate of rise of
T
J
= T
J
max. linear to 80% V
DRM
, higher value
off-state voltage
available on request
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Parameter
ST333S
Units
Conditions
Blocking
500
V/
s
50
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
60
P
G(AV)
Maximum average gate power
10
I
GM
Max. peak positive gate current
10
A
T
J
= T
J
max, t
p
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
to trigger
V
GT
Max. DC gate voltage required
to trigger
I
GD
Max. DC gate current not to trigger
20
mA
V
GD
Max. DC gate voltage not to trigger
0.25
V
Triggering
Parameter
ST333S
Units
Conditions
20
5
V
T
J
= T
J
max, t
p
5ms
200
mA
3
V
T
J
= 25C, V
A
= 12V, Ra = 6
T
J
= T
J
max, rated V
DRM
applied
t
q
Max. turn-off time
15
s
W
T
J
= T
J
max, f = 50Hz, d% = 50
ST333S Series
4
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Bulletin I25171 rev. D 03/03
T
J
Max. junction operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 150
R
thJC
Max. thermal resistance, junction to case
0.10
DC operation
R
thCS
Max. thermal resistance, case to heatsink
0.03
Mounting surface, smooth, flat and greased
T
Mounting torque, 10%
48.5
Nm
(425)
(Ibf-in)
wt
Approximate weight
535
g
Case style
TO-209AE (TO-118)
See Outline Table
Parameter
ST333S
Units
Conditions
Thermal and Mechanical Specifications
C
K/W
Non lubricated threads
Ordering Information Table
5
6
8
9
ST
33
3
S
08
P
F
L
0
3
4
7
Device Code
2
1
180
0.011
0.008
120
0.013
0.014
90
0.017
0.018
K/W
T
J
= T
J
max.
60
0.025
0.026
30
0.041
0.042
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
1
- Thyristor
2
- Essential part number
3
- 3 = Fast turn off
4
- S = Compression bonding Stud
5
- Voltage code: Code x 100 = V
RRM
(See Voltage Ratings table)
6
- P = Stud base 3/4" 16UNF-2A
7
- Reapplied dv/dt code (for t
q
test condition) F = 200V/s
8
- t
q
code (L = 15s)
9
- 0 = Eyelet terminals (Gate and Aux. Cathode Leads)
1 = Fast-on terminals (Gate and Aux. Cathode Leads)
NOTE: For Metric Device M24 x 1.5 Contact Factory
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ST333S Series
5
Bulletin I25171 rev. D 03/03
Fast-on Terminals
Outline Table
RED CATHODE
RED SILICON RUBBER
10.5 (0.41)
24
5 (
9
.
6
5)
1
0
(
0
.
3
9)
WHITE GATE
4.3 (0.17) DIA.
CERAMIC HOUSING
WHITE SHRINK
NOM.
47
(
1
.
8
5
)
MAX
.
245
(
9
.
6
5
)
38 (1.50)
MAX. DIA.
22 (0.87) MAX.
MAX
.
21
(
0
.
8
2
)
M
A
X
.
SW 45
2
FLEXIBLE LEAD
4.5 (0.18) MAX.
C.S. 50mm
(0.078 s.i.)
2
5
5 (
1
0.
04
)
RED SHRINK
22
(0
.8
6)
M
IN
.
49 (1.92) MAX.
3/4"16 UNF-2A
27.
5 (
1
.
0
8
)
9.
5
(0
.3
7)
M
IN
.
Case Style TO-209AE (TO-118)
All dimensions in millimeters (inches)
AMP. 280000-1
REF-250
* FOR METRIC DEVICE: M16 X 1.5 - LENGHT 21 (0.83) MAX.
CONTACT FACTORY
Fig. 2 - Current Ratings Characteristics
70
80
90
100
110
120
130
0
50
100 150 200 250 300 350
M
a
x
i
m
u
m
A
l
l
o
w
abl
e
C
a
s
e
T
e
mpe
r
atu
r
e
(
C
)
30
60
90
120
180
Average On-state Current (A)
Conduc tion Angle
ST333S Series
R (DC) = 0.10 K/ W
thJC
60
70
80
90
100
110
120
130
0
100
200
300
400
500
600
DC
30
60
90
120
180
Average On-state Current (A)
M
a
x
i
mu
m A
l
l
o
w
a
b
l
e
C
a
s
e
T
e
mp
er
a
t
u
r
e
(
C)
Conduc tion Period
ST333S Series
R (DC) = 0.10 K/ W
thJC
Fig. 1 - Current Ratings Characteristics
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