Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. B
11/08/05

ISSI

Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.

IS64WV6416BLL
IS61WV6416BLL

FUNCTIONAL BLOCK DIAGRAM

64K x 16 HIGH-SPEED CMOS STATIC RAM

NOVEMBER 2005

FEATURES

· High-speed access time:

12 ns: 3.3V + 10%

15 ns: 2.5V-3.6V

· CMOS low power operation:

50 mW (typical) operating

25 µW (typical) standby

· TTL compatible interface levels

· Fully static operation: no clock or refresh

required

· Three state outputs

· Data control for upper and lower bytes

· Automotive Temperature Available

· Lead-free available

DESCRIPTION

The

ISSI

IS61/64WV6416BLL is a high-speed, 1,048,576-

bit static RAM organized as 65,536 words by 16 bits. It is
fabricated using

ISSI

's high-performance CMOS

technology. This highly reliable process coupled with inno-
vative circuit design techniques, yields access times as
fast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with low
power consumption.

When

is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be
reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,

and

. The active LOW

Write Enable (

) controls both writing and reading of the

memory. A data byte allows Upper Byte (

) and Lower

Byte (

) access.

The IS61/64WV6416BLL is packaged in the JEDEC stan-
dard 44-pin TSOP-II, and 48-pin mini BGA (6mm x 8mm).

A0-A15

CE
OE

64K x 16

MEMORY ARRAY

DECODER

COLUMN I/O

CONTROL

CIRCUIT

GND

I/O

DATA

CIRCUIT

I/O0-I/O7

Lower Byte

I/O8-I/O15

Upper Byte

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. B

11/08/05

ISSI

IS64WV6416BLL
IS61WV6416BLL

PIN CONFIGURATIONS

44-Pin TSOP-II

48-Pin mini BGA (6mm x 8mm)

PIN DESCRIPTIONS

A0-A15

Address Inputs

I/O0-I/O15

Data Inputs/Outputs

Chip Enable Input

Output Enable Input

Write Enable Input

Lower-byte Control (I/O0-I/O7)

Upper-byte Control (I/O8-I/O15)

No Connection

Power

GND

Ground

1 2 3 4 5 6

I/O

GND

I/O

GND

I/O

A14

A15

I/O

A12

A13

I/O

A10

A11

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22

44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23

A15
A14
A13
A12
A11

I/O0
I/O1
I/O2
I/O3

GND

I/O4
I/O5
I/O6
I/O7

A10

A9
A8
A7

A0
A1
A2

OE
UB
LB

I/O15
I/O14
I/O13
I/O12
GND
V

I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. B
11/08/05

ISSI

IS64WV6416BLL
IS61WV6416BLL

OPERATING RANGE (V

)

Range

Ambient Temperature

(15 ns)

(12 ns)

Commercial

0°C to +70°C

2.5V-3.6V

3.3V + 10%

Industrial

40°C to +85°C

2.5V-3.6V

3.3V + 10%

Automotive

40°C to +125°C

2.5V-3.6V

3.3V + 10%

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol

Parameter

Value

Unit

TERM

Terminal Voltage with Respect to GND

0.5 to V

+0.5

STG

Storage Temperature

65 to +150

°C

Power Dissipation

1.5

Related to GND

-0.2 to +3.9

Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.

TRUTH TABLE

I/O PIN

Mode

I/O0-I/O7

I/O8-I/O15

Current

Not Selected

High-Z

, I

Output Disabled

High-Z

Read

OUT

High-Z

OUT

Write

High-Z

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. B

11/08/05

ISSI

IS64WV6416BLL
IS61WV6416BLL

DC ELECTRICAL CHARACTERISTICS

(Over Operating Range)

= 2.5V-3.6V

Symbol

Parameter

Test Conditions

Min.

Max.

Unit

Output HIGH Voltage

= Min., I

= 1.0 mA

2.3

Output LOW Voltage

= Min., I

= 1.0 mA

0.4

Input HIGH Voltage

2.0

+ 0.3

Input LOW Voltage

(1)

0.3

0.8

Input Leakage

GND

µA

Output Leakage

GND

OUT

, Outputs Disabled

µA

Note:

(min.) = 0.3V DC; V

(min.) = 2.0V AC (pulse width - 2.0 ns). Not 100% tested.

(max.) = V

+ 0.3V DC; V

(max.) = V

+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.

DC ELECTRICAL CHARACTERISTICS

(Over Operating Range)

= 3.3V + 10%

Symbol

Parameter

Test Conditions

Min.

Max.

Unit

Output HIGH Voltage

= Min., I

= 4.0 mA

2.4

Output LOW Voltage

= Min., I

= 8.0 mA

0.4

Input HIGH Voltage

+ 0.3

Input LOW Voltage

(1)

0.3

0.8

Input Leakage

GND

µA

Output Leakage

GND

OUT

, Outputs Disabled

µA

Note:

(min.) = 0.3V DC; V

(min.) = 2.0V AC (pulse width - 2.0 ns). Not 100% tested.

(max.) = V

+ 0.3V DC; V

(max.) = V

+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. B
11/08/05

ISSI

IS64WV6416BLL
IS61WV6416BLL

CAPACITANCE

(1)

Symbol

Parameter

Conditions

Max.

Unit

Input Capacitance

= 0V

OUT

Input/Output Capacitance

OUT

= 0V

Note:
1. Tested initially and after any design or process changes that may affect these parameters.

POWER SUPPLY CHARACTERISTICS

(1)

(Over Operating Range)

-12 ns

-15 ns

Symbol Parameter

Test Conditions

Options

Min.

Max.

Min.

Max.

Unit

Dynamic Operating

= Max.,

COM

Supply Current

OUT

= 0 mA, f = f

MAX

IND

AUTO

typ.

(2)

Operating Supply

= Max.,

COM

Current

Iout = 0mA, f = 0

IND

AUTO

CMOS Standby

= Max.,

COM

Current (CMOS Inputs)

0.2V,

IND

0.2V, or

AUTO

0.2V, f = 0

typ.

(2)

Note:
1. At f = f

MAX

, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

2. Typical values are measured at V

=2.5V, T

=25

C. Not 100% tested.

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. B

11/08/05

ISSI

IS64WV6416BLL
IS61WV6416BLL

AC TEST CONDITIONS

Parameter

Unit

(2.5V-3.6V)

(3.3V + 10%)

Input Pulse Level

0V to V

Input Rise and Fall Times

1.5ns

Input and Output Timing

/2 + 0.05

and Reference Level (V

Ref

)

Output Load

See Figures 1a and 1b

AC TEST LOADS

Figure 1a.

Figure 1b.

30 pF
Including
jig and
scope

Zo=50

OUTPUT

Ref

319

5 pF

Including

jig and

scope

353

OUTPUT

2.5V

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. B
11/08/05

ISSI

IS64WV6416BLL
IS61WV6416BLL

READ CYCLE SWITCHING CHARACTERISTICS

(1)

(Over Operating Range)

-12 ns

-15 ns

Symbol

Parameter

Min. Max.

Unit

Read Cycle Time

Address Access Time

OHA

Output Hold Time

ACE

Access Time

DOE

Access Time

HZOE

(2)

to High-Z Output

LZOE

(2)

to Low-Z Output

HZCE

to High-Z Output

LZCE

(2)

to Low-Z Output

Access Time

HZB

to High-Z Output

LZB

to Low-Z Output

Notes:
1. Test conditions assume signal transition times of 1.5 ns or less, timing reference levels of 1.25V, input pulse levels of 0V to

V and output loading specified in Figure 1a.

2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. B

11/08/05

ISSI

IS64WV6416BLL
IS61WV6416BLL

READ CYCLE NO. 2

(1,3)

AC WAVEFORMS

READ CYCLE NO. 1

(1,2)

(Address Controlled) (

= V

)

Notes:
1.

is HIGH for a Read Cycle.

2. The device is continuously selected.

, or

= V

3. Address is valid prior to or coincident with

LOW transition.

OHA

DOE

LZOE

ACE

LZCE

HZOE

HIGH-Z

DATA VALID

HZB

ADDRESS

OUT

HZCE

LZB

DATA VALID

PREVIOUS DATA VALID

OHA

OUT

ADDRESS

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. B
11/08/05

ISSI

IS64WV6416BLL
IS61WV6416BLL

WRITE CYCLE SWITCHING CHARACTERISTICS

(1,2)

(Over Operating Range)

-12 ns

-15 ns

Symbol

Parameter

Min.

Max.

Min.

Max.

Unit

Write Cycle Time

SCE

to Write End

Address Setup Time

to Write End

Address Hold from Write End

Address Setup Time

PWB

Valid to End of Write

PWE

Pulse Width (

= HIGH)

PWE

Pulse Width (

= LOW)

Data Setup to Write End

Data Hold from Write End

HZWE

(3)

LOW to High-Z Output

LZWE

(3)

HIGH to Low-Z Output

Notes:
1. Test conditions for IS61WV6416BLL assume signal transition times of 1.5ns or less, timing reference levels of 1.25V, input

pulse levels of 0V to V

V and output loading specified in Figure 1a.

2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of

LOW and

, and

LOW. All signals must be in valid states to

initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to
the rising or falling edge of the signal that terminates the write.

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. B
11/08/05

ISSI

IS64WV6416BLL
IS61WV6416BLL

WRITE CYCLE NO. 2

(1)

(

Controlled,

= HIGH during Write Cycle)

DATA UNDEFINED

LOW

VALID ADDRESS

PWE1

HIGH-Z

PBW

HZWE

ADDRESS

OUT

DATA

VALID

LZWE

UB_CEWR2.eps

WRITE CYCLE NO. 3

(

Controlled:

is LOW During Write Cycle)

DATA UNDEFINED

VALID ADDRESS

LOW

PWE2

HIGH-Z

PBW

HZWE

ADDRESS

OUT

DATA

VALID

LZWE

UB_CEWR3.eps

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. B

11/08/05

ISSI

IS64WV6416BLL
IS61WV6416BLL

DATA UNDEFINED

ADDRESS 1

ADDRESS 2

HIGH-Z

PBW

WORD 1

LOW

WORD 2

UB_CEWR4.eps

HZWE

ADDRESS

OUT

DATA

VALID

LZWE

PBW

DATA

VALID

WRITE CYCLE NO. 4

(

Controlled, Back-to-Back Write)

(1,3)

Notes:
1. The internal Write time is defined by the overlap of

= LOW,

and/or

= LOW, and

= LOW. All signals must be

in valid states to initiate a Write, but any can be deasserted to terminate the Write. The

, and

timing is

referenced to the rising or falling edge of the signal that terminates the Write.

2. Tested with

HIGH for a minimum of 4 ns before

= LOW to place the I/O in a HIGH-Z state.

may be held LOW across many address cycles and the

pins can be used to control the Write function.

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. B
11/08/05

ISSI

IS64WV6416BLL
IS61WV6416BLL

DATA RETENTION WAVEFORM

(

Controlled)

DATA RETENTION SWITCHING CHARACTERISTICS

Symbol

Parameter

Test Condition

Operations

Min.

Typ.

(1)

Max.

Unit

for Data Retention

See Data Retention Waveform

1.8

3.6

Data Retention Current

= 1.8V,

0.2V

COM

µA

IND

AUTO

SDR

Data Retention Setup Time

See Data Retention Waveform

RDR

Recovery Time

See Data Retention Waveform

Note:

1. Typical values are measured at V

= 2.5V, T

= 25

C. Not 100% tested.

- 0.2V

SDR

RDR

GND

1.65V

1.4V

Data Retention Mode

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. B

11/08/05

ISSI

IS64WV6416BLL
IS61WV6416BLL

ORDERING INFORMATION

Industrial Temperature Range: 40°C to +85°C

Speed (ns)

Order Part No.

Package

IS61WV6416BLL-12TI

Plastic TSOP

IS61WV6416BLL-12TLI

Plastic TSOP, Lead-free

IS61WV6416BLL-12BI

mini BGA (6mm x 8mm)

IS61WV6416BLL-12BLI

mini BGA (6mm x 8mm), Lead-free

Temperature Range (A3): 40°C to +125°C

Speed (ns)

Order Part No.

Package

15 (12

)

IS64WV6416BLL-15TA3

Plastic TSOP

15 (12

)

IS64WV6416BLL-15TLA3

Plastic TSOP, Lead-free

15 (12

)

IS64WV6416BLL-15BA3

mini BGA (6mm x 8mm)

15 (12

)

IS64WV6416BLL-15BLA3

mini BGA (6mm x 8mm), Lead-free

Note:
1. Speed = 12ns for V

= 3.3V + 10%. Speed = 15ns for V

= 2.5V- 3.6V.

PACKAGING INFORMATION

ISSI

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. D
01/15/03

Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Mini Ball Grid Array
Package Code: B (48-pin)

Notes:
1. Controlling dimensions are in millimeters.

mBGA - 6mm x 8mm

MILLIMETERS

INCHES

Sym.

Min. Typ. Max.

N0.
Leads

1.20

0.047

0.24

0.30

0.009

0.012

0.60

0.024

7.90

8.10

0.311

0.319

5.25 BSC

0.207 BSC

5.90

6.10

0.232

0.240

3.75 BSC

0.148 BSC

0.75 BSC

0.030 BSC

0.30

0.35

0.40

0.012 0.014 0.016

mBGA - 8mm x 10mm

MILLIMETER

INCHES

Sym.

Min. Typ. Max.

N0.
Leads

1.20

0.047

0.24

0.30

0.009

0.012

0.60

0.024

9.90

10.10

0.390

0.398

5.25 BSC

0.207 BSC

7.90

8.10

0.311

0.319

3.75 BSC

0.148 BSC

0.75 BSC

0.030 BSC

0.30

0.35

0.40

0.012 0.014 0.016

SEATING PLANE

b (48x)

Top View

Bottom View

6 5 4 3 2 1

1 2 3 4 5 6

PACKAGING INFORMATION

ISSI

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. F
06/18/03

Plastic TSOP
Package Code: T (Type II)

SEATING PLANE

N/2

N/2+1

Notes:
1. Controlling dimension: millimieters,

unless otherwise specified.

2. BSC = Basic lead spacing

between centers.

3. Dimensions D and E1 do not

include mold flash protrusions and
should be measured from the
bottom of the package.

4. Formed leads shall be planar with

respect to one another within
0.004 inches at the seating plane.

Plastic TSOP (T - Type II)

Millimeters

Inches

Millimeters

Inches

Millimeters

Inches

Symbol Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Ref. Std.

No. Leads (N)

1.20

0.047

1.20

0.047

1.20

0.047

0.05

0.15

0.002 0.006

0.05

0.15

0.002 0.006

0.05

0.15

0.002 0.006

0.30

0.52

0.012 0.020

0.30

0.45

0.012 0.018

0.30

0.45

0.012 0.018

0.12

0.21

0.005 0.008

0.12

0.21

0.005 0.008

0.12

0.21

0.005 0.008

20.82 21.08

0.820 0.830

18.31 18.52

0.721 0.729

20.82 21.08

0.820 0.830

10.03 10.29

0.391 0.400

10.03 10.29

0.395 0.405

10.03 10.29

0.395 0.405

11.56 11.96

0.451 0.466

11.56 11.96

0.455 0.471

11.56 11.96

0.455 0.471

1.27 BSC

0.050 BSC

0.80 BSC

0.032 BSC

0.80 BSC

0.031 BSC

0.40

0.60

0.016 0.024

0.41

0.60

0.016 0.024

0.40

0.60

0.016 0.024

ZD 0.95 REF 0.037 REF 0.81 REF 0.032 REF 0.88 REF 0.035 REF

0°

5°

0°

5°

0°

5°

0°

5°

0°

5°

0°

5°

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