Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
1
Rev. A
01/17/05
ISSI
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
IS61C6416AL
IS64C6416AL
IS62C6416AL
IS65C6416AL
FEATURES
IS61C6416AL and IS64C6416AL
High-speed access time: 12 ns, 15ns
Low Active Power: 175 mW (typical)
Low Standby Power: 1 mW (typical)
CMOS standby
IS62C6416AL and IS65C6416AL
High-speed access time: 35 ns, 45ns
Low Active Power: 50 mW (typical)
Low Standby Power: 100 W (typical)
CMOS standby
TTL compatible interface levels
Single 5V 10% power supply
Fully static operation: no clock or refresh
required
Available in 44-pin SOJ package and
44-pin TSOP (Type II)
Commercial, Industrial and Automotive tempera-
ture ranges available
Lead-free available
DESCRIPTION
The
ISSI
IS61C6416AL, IS62C6416AL, IS64C6416AL and
IS65C6416AL are high-speed, 1,048,576-bit static RAMs
organized as 65,536 words by 16 bits. They are fabricated
using
ISSI
's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design tech-
niques, yields access times as fast as 12 ns with low power
consumption.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be reduced
down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE
. The active LOW Write
Enable (
WE
) controls both writing and reading of the memory.
A data byte allows Upper Byte (
UB
) and Lower Byte (
LB
)
access.
The IS61C6416AL, IS62C6416AL, IS64C6416AL and
IS65C6416AL are packaged in the JEDEC standard 44-pin
400-mil SOJ and 44-pin TSOP (Type II).
FUNCTIONAL BLOCK DIAGRAM
JANUARY 2005
A0-A15
CE
OE
WE
64K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
UB
LB
64K x 16 HIGH-SPEED CMOS STATIC RAM
2
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. A
01/17/05
ISSI
IS61C6416AL
IS64C6416AL
IS62C6416AL
IS65C6416AL
PIN CONFIGURATIONS
44-Pin SOJ
PIN DESCRIPTIONS
A0-A15
Address Inputs
I/O0-I/O15
Data Inputs/Outputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
44-Pin TSOP (Type II)
LB
Lower-byte Control (I/O0-I/O7)
UB
Upper-byte Control (I/O8-I/O15)
NC
No Connection
V
DD
Power
GND
Ground
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A15
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
VDD
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
A8
A7
NC
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
VDD
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A15
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
VDD
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
A8
A7
NC
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
VDD
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
3
Rev. A
01/17/05
ISSI
IS61C6416AL
IS64C6416AL
IS62C6416AL
IS65C6416AL
TRUTH TABLE
I/O PIN
Mode
WE
WE
WE
WE
WE
CE
CE
CE
CE
CE
OE
OE
OE
OE
OE
LB
LB
LB
LB
LB
UB
UB
UB
UB
UB
I/O0-I/O7
I/O8-I/O15
V
DD
Current
Not Selected
X
H
X
X
X
High-Z
High-Z
I
SB
1
, I
SB
2
Output Disabled
H
L
H
X
X
High-Z
High-Z
I
CC
1
, I
CC
2
X
L
X
H
H
High-Z
High-Z
Read
H
L
L
L
H
D
OUT
High-Z
I
CC
1
, I
CC
2
H
L
L
H
L
High-Z
D
OUT
H
L
L
L
L
D
OUT
D
OUT
Write
L
L
X
L
H
D
IN
High-Z
I
CC
1
, I
CC
2
L
L
X
H
L
High-Z
D
IN
L
L
X
L
L
D
IN
D
IN
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
TERM
Terminal Voltage with Respect to GND
0.5 to +7.0
V
T
STG
Storage Temperature
65 to +150
C
P
T
Power Dissipation
1.5
W
I
OUT
DC Output Current (LOW)
20
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
OPERATING RANGE (IS64C/65C6416AL)
Range
Ambient Temperature
V
DD
Automotive
-40C to +125C
5V 10%
OPERATING RANGE (IS61C/62C6416AL)
Range
Ambient Temperature
V
DD
Commercial
0C to +70C
5V 10%
Industrial
-40C to +85C
5V 10%
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
5
Rev. A
01/17/05
ISSI
IS61C6416AL
IS64C6416AL
IS62C6416AL
IS65C6416AL
IS61C6416AL/IS64C6416AL
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-12 ns
-15 ns
Symbol Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
I
CC
1
V
DD
Operating
V
DD
= V
DD
MAX
.,
CE
= V
IL
Com.
--
40
mA
Supply Current
I
OUT
= 0 mA, f = 0
Ind.
--
45
Auto.
--
50
I
CC
2
V
DD
Dynamic Operating
V
DD
= V
DD
MAX
.,
CE
= V
IL
Com.
--
50
mA
Supply Current
I
OUT
= 0 mA, f = f
MAX
Ind.
--
55
Auto.
--
60
typ.
(2)
--
35
I
SB
1
TTL Standby Current
V
DD
= V
DD
MAX
.,
Com.
--
1
mA
(TTL Inputs)
V
IN
= V
IH
or V
IL
Ind.
--
1
CE
V
IH
, f = 0
Auto.
--
1
I
SB
2
CMOS Standby
V
DD
= V
DD
MAX
.,
Com.
--
350
A
Current (CMOS Inputs)
CE
V
DD
0.2V,
Ind.
--
400
V
IN
V
DD
0.2V, or
Auto.
--
450
V
IN
0.2V, f = 0
typ.
(2)
--
200
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
= 5V, T
A
= 25% and not 100% tested.
IS62C6416AL/IS65C6416AL
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-35 ns -45 ns
Symbol Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
I
CC
Average operating
CE
= V
IL
,
Com.
--
10
mA
Current
V
IN
= V
IH
or V
IL
,
Ind.
--
15
I
I/O
= 0 mA
Auto.
--
20
I
CC
1
V
DD
Dynamic Operating
V
DD
= Max.,
CE
= V
IL
Com.
--
35
mA
Supply Current
I
OUT
= 0 mA, f = f
MAX
Ind.
--
40
V
IN
= V
IH
or V
IL
Auto.
--
45
I
SB
1
TTL Standby Current
V
DD
= Max.,
Com.
--
1
mA
(TTL Inputs)
V
IN
= V
IH
or V
IL
,
CE
V
IH
,
Ind.
--
1.5
f = 0
Auto.
--
2
I
SB
2
CMOS Standby
V
DD
= Max.,
Com.
--
5
A
Current (CMOS Inputs)
CE
V
DD
0.2V,
Ind.
--
10
V
IN
V
DD
0.2V,
Auto.
--
15
or V
IN
V
SS
+ 0.2V, f = 0
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
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