2001 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
55
A
I
C90
T
C
= 90
C
30
A
I
CM
T
C
= 25
C, 1 ms
110
A
SSOA
V
GE
= 15 V, T
J
= 125
C, R
G
= 2.7
I
CM
= 60
A
(RBSOA)
Clamped inductive load, V
CC
= 0.8 V
CES
@ 0.8 V
CES
t
SC
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125
C
10
s
(SCSOA)
R
G
= 33
,
non repetitive
P
C
T
C
= 25
C
200
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
Weight
TO-247
6
g
TO-268
4
g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 250
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 2.5 mA, V
CE
= V
GE
4
7
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
100
A
V
GE
= 0 V
T
J
= 125
C
1
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
V
GE
= 15 V; I
C
= I
C90
30N60B
2.0
V
30N60C
2.5
V
Features
l
International standard packages
l
Short Circuit SOA capability
l
High frequency IGBT
l
New generation HDMOS
TM
process
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Easy to mount with 1 screw
(isolated mounting screw hole)
l
Surface mountable, high power case
style
l
Reduce assembly time and cost
l
High power density
98519B (11/01)
G = Gate
S = Source
TAB = Drain
TO-247 AD (IXSH)
(TAB)
TO-268 (D3) ( IXST)
(TAB)
G
S
High Speed IGBT
Short Circuit SOA Capability
V
CES
I
CES
t
fi
IXSH/IXST 30N60B
600 V 2.0 V 140 ns
IXSH/IXST 30N60C
600 V 2.5 V 70 ns
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
10
S
Pulse test, t
300
s, duty cycle
2 %
C
ies
3100
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
240
pF
C
res
30
pF
Q
g
100
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
30
nC
Q
gc
38
nC
t
d(on)
30
ns
t
ri
30
ns
t
d(off)
30N60B
150
270
ns
30N60C
90
150
ns
t
fi
30N60B
140
270
ns
30N60C
70
120
ns
E
off
30N60B
1.5
2.5
mJ
30N60C
0.7
1.2
mJ
t
d(on)
35
ns
t
ri
35
ns
E
on
0.5
mJ
t
d(off)
30N60B
270
ns
30N60C
150
ns
t
fi
30N60B
250
ns
30N60C
140
E
off
30N60B
2.5
mJ
30N60C
1.2
mJ
R
thJC
0.62 K/W
R
thCK
(TO-247)
0.25
K/W
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= 4.7
Note 1
TO-247 AD Outline
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= 4.7
Note 1
IXSH/IXST 30N60B
IXSH/IXST 30N60C
Notes: 1. Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
.
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-268 Outline
Min Recommended Footprint
2001 IXYS All rights reserved
V
CE
-Volts
0
5
10
15
20
25
30
35
40
C
a
pa
ci
ta
nce
- p
F
10
100
1000
10000
T
J
- Degrees C
25
50
75
100
125
150
V
CE
(
s
a
t
)
-
Nor
m
aliz
ed
0.6
0.8
1.0
1.2
1.4
1.6
V
CE
- Volts
0
1
2
3
4
5
I
C
- A
m
pe
r
e
s
0
20
40
60
80
100
V
GE
- Volts
4
6
8
10
12
14
16
I
C
- A
m
pe
r
e
s
0
20
40
60
80
100
120
140
V
CE
- Volts
0
2
4
6
8
10
I
C
- A
m
pe
r
e
s
0
40
80
120
160
200
13V
11V
9V
7V
V
CE
= 10V
T
J
= 25C
V
GE
= 15V
T
J
= 25C
I
C
= 15A
I
C
= 30A
I
C
= 60A
T
J
=
125C
C
rss
f = 1Mhz
7V
5V
V
GE
= 15V
T
J
= 25C
V
CE
- Volts
0
2
4
6
8
10
I
C
- A
m
pe
r
e
s
0
20
40
60
80
100
120
T
J
= 125C
C
iss
C
oss
V
GE
= 15V
7V
9V
11V
13V
V
GS
=15V
9V
11V
13V
Fig.3 Collector-Emitter Voltage
Fig.4 Temperature Dependence
vs. Gate-Emitter Voltage
of Output Saturation Voltage
Fig.5Input Admittance
Fig.6 Temperature Dependence of
Breakdown and Threshold Voltage
Fig.1 Saturation Characteristics
Fig.2 Output Characterstics
IXSH/IXST 30N60B
IXSH/IXST 30N60C
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Pulse Width - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
Z
thJ
C
(K
/W)
0.001
0.01
0.1
1
D=0.2
V
CE
- Volts
0
100
200
300
400
500
600
I
C
- Am
p
e
re
s
0.1
1
10
100
Q
g
- nanocoulombs
0
25
50
75
100
125
V
GE
- V
o
l
t
s
0
3
6
9
12
15
R
G
- Ohms
0
10
20
30
40
50
E
(O
FF)
- mi
ll
ijo
ule
s
0
2
4
6
8
E
(O
N
)
-
mi
ll
ij
o
u
l
e
s
0.0
0.5
1.0
1.5
2.0
T
J
= 125C
I
C
- Amperes
0
20
40
60
80
E
(O
FF)
-
mi
ll
iJ
ou
le
s
0.0
2.5
5.0
7.5
E
(O
N)
-
m
i
l
l
i
j
oul
es
0.0
0.5
1.0
1.5
V
CE
= 300V
I
C
= 30A
I
C
=30A
E
(ON)
E
(OFF)
E
(OFF)
E
(OFF)
T
J
= 125C
R
G
= 4.7
dV/dt < 5V/ns
D=0.5
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
D = Duty Cycle
R
G
= 10
T
J
= 125C
I
C
= 60A
I
C
= 15A
E
(OFF)
E
(ON)
E
(ON)
E
(ON)
Fig.11 Transient Thermal Impedance
Fig.9 Gate Charge Characteristic Curve
Fig.10 Turn-Off Safe Operating Area
Fig.7 Turn-Off Energy per Pulse and
Fig.8 Dependence of Turn-Off Energy
Fall Time on Collector Current
Per Pulse and Fall Time on R
G
IXSH/IXST 30N60B
IXSH/IXST 30N60C
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