2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
1000
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
1000
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
6
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
24
A
I
AR
T
C
= 25
C
6
A
E
AR
T
C
= 25
C
20
mJ
E
AS
T
C
= 25
C
500
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
15
V/ns
T
J
150
C, R
G
= 2
P
D
T
C
= 25
C
180
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in.) from case for 10 s
300
C
M
d
Mounting torque
TO-247
1.13/10 Nm/lb.in.
Weight
TO-247
6 g
TO-268
4 g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 500uA
1000
V
V
GS(th)
V
DS
= V
GS
, I
D
= 2.5 mA
3.0
5.5 V
I
GSS
V
GS
=
20 V, V
DS
= 0
100 nA
I
DSS
V
DS
= V
DSS
50
A
V
GS
= 0 V
T
J
= 125
C
1 mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
1.9
Note 1
98732B (9/02)
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
g
,
Low Intrinsic R
g
High dV/dt,
Low t
rr
Features
RF capable MOSFETs
Double metal process for low gate
resistance
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
13.5 MHz industrial applications
Pulse generation
Laser drivers
RF amplifiers
Advantages
Space savings
High power density
TO-247 AD (IXFH)
(TAB)
G = Gate,
D = Drain,
S = Source,
TAB = Drain
TO-268 (IXFT) Case Style
(TAB)
G
S
IXFH 6N100F
IXFT 6N100F
V
DSS
= 1000 V
I
D25
= 6 A
R
DS(on)
= 1.9
t
rr
250 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXFH 6N100F
IXFT 6N100F
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
Note 1
3
5.5
S
C
iss
1770
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
186
pF
C
rss
53
pF
t
d(on)
11
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
8.6
ns
t
d(off)
R
G
= 2.0
(External),
21
ns
t
f
8.3
ns
Q
g(on)
54
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
14
nC
Q
gd
27
nC
R
thJC
0.65
K/W
R
thCK
(TO-247)
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
6
A
I
SM
Repetitive;
24
A
pulse width limited by T
JM
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
250
n s
Q
RM
0.6
C
I
RM
4
A
I
F
= I
S
,-di/dt = 100 A/
s, V
R
= 100 V
Note: 1. Pulse test, t
300
s, duty cycle d
2 %
TO-247 AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-268 Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.9
5.1
.193
.201
A
1
2.7
2.9
.106
.114
A
2
.02
.25
.001
.010
b
1.15
1.45
.045
.057
b
2
1.9
2.1
.75
.83
C
.4
.65
.016
.026
D
13.80
14.00
.543
.551
E
15.85
16.05
.624
.632
E
1
13.3
13.6
.524
.535
e 5.45 BSC .215 BSC
H
18.70
19.10
.736
.752
L
2.40
2.70
.094
.106
L1
1.20
1.40
.047
.055
L2
1.00
1.15
.039
.045
L3 0.25 BSC .010 BSC
L4
3.80
4.10
.150
.161
Min Recommended Footprint
2002 IXYS All rights reserved
IXFH 6N100F
IXFT 6N100F
V
GS
- Volts
3.5
4.0
4.5
5.0
5.5
6.0
6.5
I
D
- A
m
pe
r
e
s
0
2
4
6
T
C
- Degrees C
-50 -25
0
25
50
75 100 125 150
I
D
- A
m
pe
r
e
s
0
2
4
6
8
T
J
- Degrees C
-25
0
25
50
75
100 125 150
R
DS
(
O
N
)
- N
o
r
m
alize
d
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
- Amperes
0
2
4
6
8
10
12
R
DS
(
O
N
)
- N
o
r
m
alize
d
0
1
2
3
4
V
DS
- Volts
0
5
10
15
20
25
I
D
- A
m
pe
r
e
s
0
2
4
6
8
V
DS
- Volts
0
5
10
15
20
I
D
- A
m
pe
r
e
s
0
2
4
6
8
10
12
5V
V
GS
= 10V
T
J
= 125
O
C
T
J
= 25
O
C
6V
5V
T
J
= 25
o
C
T
J
= 25
O
C
T
J
= 125
O
C
6V
V
GS
= 10V
9V
8V
7V
V
GS
= 10V
9V
8V
7V
T
J
= 125
o
C
T
J
= -40
o
C
I
D
= 6A
I
D
= 3A
V
GS
= 10V
Fig. 1. Output Characteristics at 25
o
C
Fig. 2. Output Characteristics at 125
o
C
Fig. 3. R
DS(ON)
vs. Drain Current
Fig. 4. R
DS(ON)
vs. T
J
Fig. 5. Drain Current vs. Case Temperature
Fig. 6. Admittance Curves
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXFH 6N100F
IXFT 6N100F
Q
g
- nanocoulombs
0
10
20
30
40
50
V
GE
-
V
o
lts
0
2
4
6
8
10
I
D
= 3A
V
DS
= 500V
V
DS
- Volts
0
5
10
15
20
25
30
35
40
C
a
paci
t
a
n
ce -
p
F
40
50
70
200
300
400
500
700
2000
100
1000
Crss
Coss
Ciss
f = 1MHz
Pulse Width - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
Z
th
J
C
(
K
/W
)
0.001
0.01
0.1
1
D = Duty Cycle
D=0.2
D=0.5
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
T
J
= 125
O
C
T
J
= 25
O
C
V
SD
- Volts
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
-
A
m
p
e
r
e
s
0
2
4
6
8
10
12
14
16
18
T
J
= 125
o
C
T
J
= 25
o
C
I
G
= 10mA
Fig. 7. Gate Charge Characteristic Curve
Fig. 8. Capacitance Curves
Fig. 9. Source Current vs. Source to Drain Voltage
Fig. 10. Thermal Impedance
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