HiPerDynFRED
TM
Epitaxial Diode
ISOPLUS220
TM
Electrically Isolated Back Surface
Notes: Data given for T
VJ
= 25
O
C and per diode unless otherwise specified
See DSEC 29-06A for electrical characteristic curves
Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse test: pulse Width = 300
s, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low cathode to tab capacitance (<15pF)
l
Planar passivated chips
l
Very short recovery time
l
Extremely low switching losses
l
Low I
RM
-values
l
Soft recovery behaviour
l
Epoxy meets UL 94V-0
Applications
l
Antiparallel diode for high frequency
switching devices
l
Antisaturation diode
l
Snubber diode
l
Free wheeling diode in converters
and motor control circuits
l
Rectifiers in switch mode power
supplies (SMPS)
l
Inductive heating
l
Uninterruptible power supplies (UPS)
l
Ultrasonic cleaners and welders
Advantages
l
Avalanche voltage rated for reliable
operation
l
Soft reverse recovery for low EMI/RFI
l
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
I
FAV
= 2x15 A
V
RRM
= 600 V
t
rr
= 35 ns
V
RSM
V
RRM
Type
V
V
600
600
DSEA29-06AC
600
600
DSEC 29-06AC
Preliminary Data Sheet
2000 IXYS All rights reserved
DSEA 29-06AC
DSEC 29-06AC
3
2
Isolated back surface *
1
3
1
2
Symbol
Conditions
Maximum Ratings
I
FRMS
35
A
I
FAVM
T
C
= 140C; rectangular, d = 0.5
15
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
110
A
E
AS
T
VJ
= 25C; non-repetitive
0.1
mJ
I
AS
= 0.9 A; L = 180 H
I
AR
V
A
= 1.5V
R
typ.; f = 10 kHz; repetitive
0.1
A
T
VJ
-55...+175
C
T
VJM
175
C
T
stg
-55...+150
C
P
tot
T
C
= 25C
95
W
V
ISOL
50/60 Hz RMS; I
ISOL
1 mA
2500
V~
F
C
mounting force with clip
11...65 / 2.5...15
N / lb
Weight
typical
3
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25C V
R
= V
RRM
100
A
T
VJ
= 150C V
R
= V
RRM
0.5
mA
V
F
I
F
= 15 A;
T
VJ
= 150C
1.34
V
T
VJ
= 25C
2.03
V
R
thJC
1.6
K/W
R
thCH
0.6
K/W
t
rr
I
F
= 1 A; -di/dt = 50 A/s;
35
ns
V
R
= 30 V; T
VJ
= 25C
I
RM
V
R
= 100 V; I
F
= 25 A; -di
F
/dt = 100 A/s 4
4.9
A
T
VJ
= 100C
3
1
2
DSEA
DSEC
98829 (5/05)
ISOPLUS220
TM
E153432
ISOPLUS220 OUTLINE
Note: All terminals are solder plated.
DSEA:
1 - Cathode
2 - Anode
3 - Cathode
DSEC:
1 -Anode
2 - Cathode
3 - Anode
DSEA 29-06AC
DSEC 29-06AC
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