2000 IXYS All rights reserved
1 - 2
Features
q
International standard package
q
Planar passivated chips
q
Very short recovery time
q
Extremely low switching losses
q
Low I
RM
-values
q
Soft recovery behaviour
q
Epoxy meets UL 94V-0
Applications
q
Antiparallel diode for high frequency
switching devices
q
Antisaturation diode
q
Snubber diode
q
Free wheeling diode in converters
and motor control circuits
q
Rectifiers in switch mode power
supplies (SMPS)
q
Inductive heating
q
Uninterruptible power supplies (UPS)
q
Ultrasonic cleaners and welders
Advantages
q
Avalanche voltage rated for reliable
operation
q
Soft reverse recovery for low
EMI/RFI
q
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
HiPerFRED
TM
Epitaxial Diode
with common cathode and soft recovery
A = Anode, C = Cathode, TAB = Cathode
TO-247 AD
C
A
A
A C A
C (TAB)
Pulse test:
x
Pulse Width = 5 ms, Duty Cycle < 2.0 %
y
Pulse Width = 300
m
s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
DSEC 30-03A
I
FAV
= 2x 15 A
V
RRM
= 300 V
t
rr
= 30 ns
V
RSM
V
RRM
Type
V
V
300
300
DSEC 30-03A
Symbol
Conditions
Maximum Ratings
I
FRMS
50
A
I
FAVM
T
C
= 140C; rectangular, d = 0.5
15
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
110
A
E
AS
T
VJ
= 25C; non-repetitive
0.8
mJ
I
AS
= 2.5 A; L = 180 H
I
AR
V
A
= 1.5V
R
typ.; f = 10 kHz; repetitive
0.3
A
T
VJ
-55...+175
C
T
VJM
175
C
T
stg
-55...+150
C
P
tot
T
C
= 25C
95
W
M
d
mounting torque
0.8...1.2
Nm
Weight
typical
6
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
x
T
VJ
= 25C
V
R
= V
RRM
100
m
A
T
VJ
= 150C V
R
= V
RRM
0.5
mA
V
F
y
I
F
= 15 A;
T
VJ
= 150C
1.20
V
T
VJ
= 25C
1.67
V
R
thJC
1.6
K/W
R
thCH
0.25
K/W
t
rr
I
F
= 1 A; -di/dt = 100 A/
m
s;
30
ns
V
R
= 30 V; T
VJ
= 25C
I
RM
V
R
= 100 V; I
F
= 25 A; -di
F
/dt = 100 A/
m
s
2.7
A
T
VJ
= 100C
008
2000 IXYS All rights reserved
2 - 2
DSEC 30-03A
NOTE: Fig. 2 to Fig. 6 shows typical values
200
600
1000
0
400
800
30
40
50
60
70
80
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
0
40
80
120
160
0.6
0.8
1.0
1.2
1.4
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
4
6
8
10
12
14
0.60
0.65
0.70
0.75
0.80
0.85
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
5
10
15
20
100
1000
0
100
200
300
400
500
0
1
2
0
10
20
30
40
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
m
s
A
V
nC
A/
m
s
A/
m
s
t
rr
ns
t
fr
A/
m
s
s
DSEC 30-03A
Z
thJC
T
VJ
=150C
T
VJ
=100C
T
VJ
= 25C
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
T
VJ
= 100C
V
R
= 150V
T
VJ
= 100C
V
R
= 150V
T
VJ
= 100C
V
R
= 150V
T
VJ
= 100C
I
F
= 15A
V
FR
t
fr
I
RM
Q
r
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
Fig. 3 Peak reverse current I
RM
Fig. 2 Reverse recovery charge Q
r
Fig. 1 Forward current I
F
versus V
F
Fig. 4 Dynamic parameters Q
r
, I
RM
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
Fig. 7 Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.851
0.005
2
0.328
0.0003
3
0.421
0.041
008
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