IXYS reserves the right to change limits, test conditions and dimensions
2004 IXYS All rights reserved
1 - 2
DSEP 30-03A
439
I
FAV
= 30 A
V
RRM
= 300 V
t
rr
= 30 ns
V
RSM
V
RRM
Type
V
V
300
300
DSEP 30-03A
Symbol
Conditions
Maximum Ratings
I
FRMS
70
A
I
FAVM
T
C
= 135C; rectangular, d = 0.5
30
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
300
A
E
AS
T
VJ
= 25C; non-repetitive
1.2
mJ
I
AS
= 3 A; L = 180 H
I
AR
V
A
= 1.5V
R
typ.; f = 10 kHz; repetitive
0.3
A
T
VJ
-55...+175
C
T
VJM
175
C
T
stg
-55...+150
C
P
tot
T
C
= 25C
165
W
M
d
mounting torque
0.8...1.2
Nm
Weight
typical
6
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
V
R
= V
RRM
;
T
VJ
= 25C
250
A
V
R
= V
RRM
;
T
VJ
= 150C
1
mA
V
F
I
F
= 30 A;
T
VJ
= 150C
1.14
V
T
VJ
= 25C
1.55
V
R
thJC
0.9
K/W
R
thCH
0.25
K/W
t
rr
I
F
= 1 A; -di/dt = 200 A/s;
25
ns
V
R
= 30 V; T
VJ
= 25C
I
RM
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/s
2.5
3.5
A
T
VJ
= 100C
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Features
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see pages Outlines.pdf
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified.
A = Anode, C = Cathode, TAB = Cathode
TO-247 AD
C
A
C (TAB)
C
A
IXYS reserves the right to change limits, test conditions and dimensions
2004 IXYS All rights reserved
2 - 2
DSEP 30-03A
439
200
600
1000
0
400
800
40
50
60
70
80
90
0.00001
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
0
40
80
120
160
0.4
0.6
0.8
1.0
1.2
1.4
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
8
10
12
14
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
5
10
15
20
25
30
100
1000
0
200
400
600
800
0.0
0.5
1.0
1.5
0
20
40
60
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
s
A
V
nC
A/
s
A/
s
t
rr
ns
t
fr
A/
s
s
DSEP30-03A/DSEC 60-03A
Z
thJC
T
VJ
=150C
T
VJ
=100C
T
VJ
= 25C
I
F
= 60A
I
F
= 30A
I
F
= 15A
T
VJ
= 100C
V
R
= 150V
T
VJ
= 100C
V
R
= 150V
T
VJ
= 100C
V
R
= 150V
T
VJ
= 100C
I
F
= 30A
V
FR
t
fr
I
RM
Q
r
I
F
= 60A
I
F
= 30A
I
F
= 15A
I
F
= 60A
I
F
= 30A
I
F
= 15A
NOTE: Fig. 2 to Fig. 6 shows typical values
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Reverse recovery charge
Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
vs. V
F
Fig. 4 Dynamic parameters
Q
r
, I
RM
versus T
VJ
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.465
0.005
2
0.179
0.0003
3
0.256
0.04
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