1 - 2
2004 IXYS All rights reserved
406
IXYS reserves the right to change limits, test conditions and dimensions.
FID 35-06C
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
IXYS reserves the right to change limits, test conditions and dimensions.
Features
NPT IGBT technology
- low switching losses for high
frequency operation
- no latch up
- positive temperature coefficient for
easy paralleling
HiPerDyn
TM
FRED
- consisting of series connected
diodes
- enhanced dynamic behaviour for
high frequency operation
ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered E 72873
Applications
boost chopper for power factor
correction
supply of high frequency transformer
- switched mode power supplies
- welding converters
IGBT
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25C to 150C
600
V
V
GES
20
V
I
C25
T
C
= 25C
38
A
I
C90
T
C
= 90C
24
A
I
CM
V
GE
=
15 V; R
G
= 10
; T
VJ
= 125C
110
A
V
CEK
RBSOA, Clamped inductive load; L = 100 H
V
CES
t
SC
V
CE
= V
CES
; V
GE
=
15 V; R
G
= 10
; T
VJ
= 125C
10
s
(SCSOA)
non-repetitive
P
tot
T
C
= 25C
125
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 25 A; V
GE
= 15 V; T
VJ
= 25C
1.9
2.4
V
T
VJ
= 125C
2.2
V
V
GE(th)
I
C
= 0.7 mA; V
GE
= V
CE
3
5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25C
0.04
mA
T
VJ
= 125C
1
mA
I
GES
V
CE
= 0 V; V
GE
=
20 V
200
nA
t
d(on)
30
ns
t
r
50
ns
t
d(off)
320
ns
t
f
70
ns
E
on
1.1
mJ
E
off
0.6
mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
1.6
nF
Q
Gon
V
CE
= 600V; V
GE
= 15 V; I
C
= 15 A
140
nC
R
thJC
1.0 K/W
R
thJH
(with heat transfer paste)
2.0
K/W
Inductive load, T
VJ
= 125C
V
CE
= 300 V; I
C
= 25 A
V
GE
= 15 V; R
G
= 10
I
C25
= 38 A
V
CES
= 600 V
V
CE(sat) typ.
= 1.9 V
Fast IGBT Chopper
in ISOPLUS i4-PAC
TM
1
5
3
4
1
2
Preliminary data
2 - 2
2004 IXYS All rights reserved
406
IXYS reserves the right to change limits, test conditions and dimensions.
FID 35-06C
Dimensions in mm (1 mm = 0.0394")
Component
Symbol
Conditions
Maximum Ratings
T
VJ
-55...+150
C
T
stg
-55...+125
C
V
ISOL
I
ISOL
1 mA; 50/60 Hz
2500
V~
F
C
mounting force with clip
20...120
N
Symbol
Conditions
Characteristic Values
min.
typ.
max.
C
p
coupling capacity between shorted
40
pF
pins and mounting tab in the case
d
S
,d
A
pin - pin
1.7
mm
d
S
,d
A
pin - backside metal
5.5
mm
Weight
9
g
Diodes (data for series connection)
Symbol
Conditions
Maximum Ratings
V
RRM
T
VJ
= 25C to 150C
600
V
I
F25
T
C
= 25C
35
A
I
F90
T
C
= 90C
20
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 25 A; T
VJ
= 25C
2.8
3.7
V
T
VJ
= 125C
2.2
V
I
R
V
R
= V
RRM
; T
VJ
= 25C
0.1 mA
T
VJ
= 125C
0.1
mA
I
RM
I
F
= 15 A; di
F
/dt = -400 A/s; T
VJ
= 125C
8
A
t
rr
V
R
= 300 V; V
GE
= 0 V
50
ns
R
thJC
(per diode)
1.2 K/W
R
thJH
2.3
K/W
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