2000 IXYS All rights reserved
1 - 4
Symbol
Conditions
Maximum Ratings
V
CES
T
J
= 25C to 150C
1200
V
V
CGR
T
J
= 25C to 150C; R
GE
= 20 k
W
1200
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25C
38
A
I
C90
T
C
= 90C
25
A
I
CM
T
C
= 90C, t
p
= 1 ms
50
A
RBSOA
V
GE
= 15 V, T
J
= 125C, R
G
= 82
W
I
CM
= 35
A
Clamped inductive load, L = 30 H
V
CEK
< V
CES
t
SC
V
GE
= 15 V, V
CE
= V
CES
, T
J
= 125C
10
s
(SCSOA)
R
G
= 82
W
, non repetitive
P
C
T
C
= 25C
IGBT
200
W
Diode
75
W
T
J
-55 ... +150
C
T
stg
-55 ... +150
C
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque
0.8 - 1.2
Nm
Weight
6
g
V
CES
= 1200 V
I
C25
= 38 A
V
CE(sat) typ
= 2.4 V
Features
q
NPT IGBT technology
q
low saturation voltage
q
low switching losses
q
square RBSOA, no latch up
q
high short circuit capability
q
positive temperature coefficient for
easy paralleling
q
MOS input, voltage controlled
q
optional ultra fast diode
q
International standard package
Advantages
q
Space savings
q
High power density
Typical Applications
q
AC motor speed control
q
DC servo and robot drives
q
DC choppers
q
Uninteruptible power supplies (UPS)
q
Switch-mode and resonant-mode
power supplies
High Voltage IGBT
with optional Diode
Short Circuit SOA Capability
Square RBSOA
IXDH 20N120
IXDH 20N120 D1
Symbol
Conditions
Characteristic Values
(T
J
= 25C, unless otherwise specified)
min.
typ.
max.
V
(BR)CES
V
GE
= 0 V
1200
V
V
GE(th)
I
C
= 0.6 mA, V
CE
= V
GE
4.5
6.5
V
I
CES
V
CE
= V
CES
T
J
= 25C
1 mA
T
J
= 125C
2
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
500
nA
V
CE(sat)
I
C
= 20 A, V
GE
= 15 V
2.4
3
V
TO-247 AD
G = Gate,
E = Emitter
C = Collector ,
TAB = Collector
G
E
C
C (TAB)
IXDH 20N120 IXDH 20N120 D1
G
C
E
G
C
E
031
2000 IXYS All rights reserved
2 - 4
IXDH 20N120
IXDH 20N120 D1
Symbol
Conditions
Characteristic Values
(T
J
= 25C, unless otherwise specified)
min.
typ.
max.
C
ies
1000
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
150
pF
C
res
70
pF
Q
g
I
C
= 20 A, V
GE
= 15 V, V
CE
= 0.5 V
CES
70
nC
t
d(on)
100
ns
t
r
75
ns
t
d(off)
500
ns
t
f
70
ns
E
on
3.1
mJ
E
off
2.4
mJ
R
thJC
0.63 K/W
R
thCH
Package with heatsink compound
0.25
K/W
Inductive load, T
J
= 125C
I
C
= 20 A, V
GE
= 15 V,
V
CE
= 600 V, R
G
= 82
W
Reverse Diode (FRED) [D1 version only]
Characteristic Values
(T
J
= 25C, unless otherwise specified)
Symbol
Conditions
min.
typ.
max.
V
F
I
F
= 20 A, V
GE
= 0 V
2.6
2.8
V
I
F
= 20 A, V
GE
= 0 V, T
J
= 125C
2.1
V
I
F
T
C
= 25C
33
A
T
C
= 90C
20
A
I
RM
I
F
= 20 A, -di
F
/dt = 400 A/s, V
R
= 600 V
15
A
t
rr
V
GE
= 0 V, T
J
= 125C
200
ns
t
rr
I
F
= 1 A, -di
F
/dt = 100 A/s, V
R
= 30 V, V
GE
= 0 V
40
ns
R
thJC
1.6 K/W
TO-247 AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
2000 IXYS All rights reserved
3 - 4
IXDH 20N120
IXDH 20N120 D1
0
100
200
300
400
0
5
10
15
20
0
100
200
300
400
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
35
40
45
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80
0
5
10
15
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
5
10
15
20
25
30
35
40
13V
11V
T
J
= 25C
V
GE
=17V
T
J
= 125C
V
CE
= 600V
I
C
= 20A
15V
5
6
7
8
9
10
11
0
5
10
15
20
25
30
35
40
13V
11V
V
GE
=17V
15V
V
CE
= 20V
T
J
= 25C
9V
9V
V
CE
V
A
I
C
V
CE
A
I
C
V
V
V
V
GE
V
F
A
I
C
A
I
F
nC
Q
G
-di/dt
V
V
GE
A
I
RM
t
rr
ns
A/
m
s
IXDH20N120D1
T
J
= 125C
V
R
= 600V
I
F
= 20A
T
J
= 25C
T
J
= 125C
I
RM
t
rr
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode (D1 version only)
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode (D1 version only)
2000 IXYS All rights reserved
4 - 4
IXDH 20N120
IXDH 20N120 D1
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current
times versus collector current
Fig. 9 Typ. turn on energy and switching
Fig.10 Typ. turn off energy and switching
times versus gate resistor
times versus gate resistor
Fig. 11 Reverse biased safe operating area
Fig. 12 Typ. transient thermal impedance
RBSOA
0
10
20
30
40
0
1
2
3
4
5
6
7
0
20
40
60
80
100
120
140
0
10
20
30
40
0
1
2
3
4
5
0
100
200
300
400
500
0.00001
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
0
50
100
150
200
250
300
350
0
1
2
3
4
0
400
800
1200
1600
0
50
100
150
200
250
300
350
0
4
8
12
0
80
160
240
single pulse
V
CE
= 600V
V
GE
= 15V
R
G
= 82
W
T
J
= 125C
IXDH20N120D1
V
CE
= 600V
V
GE
= 15V
I
C
= 20A
T
J
= 125C
0
200
400
600
800
1000 1200
0
5
10
15
20
25
30
35
40
R
G
= 82
W
T
J
= 125C
V
CEK
< V
CES
V
CE
= 600V
V
GE
= 15V
R
G
= 82
W
T
J
= 125C
E
on
V
CE
= 600V
V
GE
= 15V
I
C
= 20A
T
J
= 125C
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
W
R
G
W
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
IGBT
diode
V
A
mJ
ns
ns
mJ
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