Features
Built using the advantages and compatibility
of CMOS and IXYS HDMOS
TM
processes.
Latch Up Protected
High Peak Output Current: 9A Peak
Operates from 4.5V to 25V
Ability to Disable Output under Faults
High Capacitive Load
Drive Capability: 2500pF in <15ns
Matched Rise And Fall Times
Low Propagation Delay Time
Low Output Impedance
Low Supply Current
Applications
Driving MOSFETs and IGBTs
Motor Controls
Line Drivers
Pulse Generators
Local Power ON/OFF Switch
Switch Mode Power Supplies (SMPS)
DC to DC Converters
Pulse Transformer Driver
Limiting di/dt under Short Circuit
Class D Switching Amplifiers
First Release
Copyright IXYS CORPORATION 2002 Patent Pending
General Description
The IXDD409/IXDI409/IXDN409 are high speed high current
gate drivers specifically designed to drive the largest
MOSFETs and IGBTs to their minimum switching time and
maximum practical frequency limits. The IXDD409/IXDI409/
IXDN409 can source and sink 9A of peak current while
producing voltage rise and fall times of less than 30ns. The
input of the drivers are compatible with TTL or CMOS and are
fully immune to latch up over the entire operating range.
Designed with small internal delays, cross conduction/
current shoot-through is virtually eliminated in the IXDD409/
IXDI409/IXDN409. Their features and wide safety margin in
operating voltage and power make the drivers unmatched in
performance and value.
The IXDD409 incorporates a unique ability to disable the
output under fault conditions. When a logical low is forced
into the Enable input, both final output stage MOSFETs
(NMOS and PMOS) are turned off. As a result, the output of
the IXDD409 enters a tristate mode and achieves a Soft Turn-
Off of the MOSFET/IGBT when a short circuit is detected.
This helps prevent damage that could occur to the MOSFET/
IGBT if it were to be switched off abruptly due to a dv/dt over-
voltage transient.
The IXDN409 is configured as a non-inverting gate driver, and
the IXDI409 is an inverting gate driver.
The IXDD409/IXDI409/IXDN409 are available in the standard 8-
pin P-DIP (PI), SOP-8 (SI), 5-pin TO-220 (CI) and in the TO-263
(YI) surface-mount packages.
Figure 1A - IXDD409 Functional Diagram
IXDD409PI / 409SI / 409YI / 409CI IXDI409PI / 409SI / 409YI / 409CI
IXDN409PI / 409SI / 409YI / 409CI
9 Amp Low-Side Ultrafast MOSFET Driver
Figure 1B - IXDN409 Functional Diagram
Figure 1C - IXDI409 Functional Diagram
Part Number Package Type Temp. Range
Configuration
IXDD409PI 8-Pin
PDIP
IXDD409SI 8-Pin
SOIC
IXDD409YI 5-Pin
TO-263
IXDD409CI 5-Pin
TO-220
-40
C to +85
C
Non Inverting
With Enable Line
IXDI409PI 8-Pin
PDIP
IXDI409SI 8-Pin
SOIC
IXDI409YI 5-Pin
TO-263
IXDI409CI 5-Pin
TO-220
-40
C to +85
C Inverting
IXDN409PI 8-Pin
PDIP
IXDN409SI 8-Pin
SOIC
IXDN409YI 5-Pin
TO-263
IXDN409CI 5-Pin
TO-220
-40
C to +85
C Non Inverting
Ordering Information
2
IXDD409PI / 409SI / 409YI / 409CI IXDI409PI / 409SI / 409YI / 409CI
IXDN409PI / 409SI / 409YI / 409CI
Unless otherwise noted, T
A
= 25
o
C, 4.5V
V
CC
25V
.
All voltage measurements with respect to GND. IXDD409 configured as described in Test Conditions.
Electrical Characteristics
Symbol
Parameter Test
Conditions Min
Typ
Max
Units
V
IH
High input voltage
3.5
V
V
IL
Low input voltage
0.8
V
V
IN
Input voltage range
-5
V
CC
+ 0.3
V
I
IN
Input
current
0V
V
IN
V
CC
-10 10
A
V
OH
High
output
voltage
V
CC
- 0.025
V
V
OL
Low
output
voltage
0.025
V
R
OH
Output
resistance
@ Output high
I
OUT
= 10mA, V
CC
= 18V
0.8
1.5
R
OL
Output
resistance
@ Output Low
I
OUT
= 10mA, V
CC
= 18V
0.8
1.5
I
PEAK
Peak
output
current V
CC
is 18V
9
A
I
DC
Continuous
output
current
Limited by package power
dissipation
2
A
V
EN
Enable voltage range
IXDD409 Only
- .3
Vcc + 0.3
V
V
ENH
High En Input Voltage
IXDD409 Only
2/3 Vcc
V
V
ENL
Low En Input Voltage
IXDD409 Only
1/3 Vcc
V
t
R
Rise
time
C
L
=2500pF Vcc=18V
8
10
15
ns
t
F
Fall
time
C
L
=2500pF Vcc=18V
8
10
15
ns
t
ONDLY
On-time
propagation
delay
C
L
=2500pF Vcc=18V
33
36
40
ns
t
OFFDLY
Off-time
propagation
delay
C
L
=2500pF Vcc=18V
31
33
36
ns
t
ENOH
Enable to output high
delay time
IXDD409 Only, Vcc=18V
52
ns
t
DOLD
Disable to output low
Disable delay time
IXDD409 Only, Vcc=18V
30
ns
V
CC
Power
supply
voltage
4.5 18 25 V
I
CC
Power supply current
V
IN
= 3.5V
V
IN
= 0V
V
IN
= + V
CC
1
0
3
10
10
mA
A
A
Absolute Maximum Ratings
(Note 1)
Parameter Value
Supply Voltage
25 V
All Other Pins
-0.3 V to VCC + 0.3 V
Power Dissipation, T
AMBIENT
25 oC
8 Pin PDIP (PI)
975mW
8 Pin SOIC (SI)
1055mW
TO220 (CI), TO263 (YI)
17W
Derating Factors (to Ambient)
8 Pin PDIP (PI)
7.6mW/oC
8 Pin SOIC (SI)
8.2mW/oC
TO220 (CI), TO263 (YI)
0.14W/oC
Storage Temperature
-65 oC to 150 oC
Lead Temperature (10 sec)
300 oC
Operating Ratings
Parameter Value
Maximum Junction Temperature
150 oC
Operating Temperature Range
-40 oC to 85 oC
Thermal Impedance (Junction To Case)
TO220 (CI), TO263 (YI) (
JC
)
0.95 oC/W
Specifications Subject To Change Without Notice
3
IXDD409PI / 409SI / 409YI / 409CI IXDI409PI / 409SI / 409YI / 409CI
IXDN409PI / 409SI / 409YI / 409CI
Pin Description
SYMBOL FUNCTION
DESCRIPTION
VCC Supply
Voltage
Positive power-supply voltage input. This pin provides power to the
entire chip. The range for this voltage is from 4.5V to 25V.
IN
Input
Input signal-TTL or CMOS compatible.
EN *
Enable
The system enable pin. This pin, when driven low, disables the chip,
forcing high impedance state to the output (IXDD409 Only).
OUT Output
Driver Output. For application purposes, this pin is connected,
through a resistor, to Gate of a MOSFET/IGBT.
GND Ground
The system ground pin. Internally connected to all circuitry, this pin
provides ground reference for the entire chip. This pin should be
connected to a low noise analog ground plane for optimum
performance.
Figure 2 - Characteristics Test Diagram
* This pin is used only on the IXDD409, and is N/C on the IXDI409 and IXDN409.
Note 1: Operating the device beyond parameters with listed "absolute maximum ratings" may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures
when handling and assembling this component.
V
IN
8 PIN DIP (PI)
SO8 (SI)
TO220 (CI)
TO263 (YI)
Vcc
OUT
GND
IN
EN *
1
2
3
4
5
Pin Configurations
V C C
IN
EN *
GND
V C C
OUT
GND
OUT
1
2
3
4
8
7
6
5
4
IXDD409PI / 409SI / 409YI / 409CI IXDI409PI / 409SI / 409YI / 409CI
IXDN409PI / 409SI / 409YI / 409CI
Typical Performance Characteristics
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8
Rise Times vs. Supply Voltage
0
5
10
15
20
25
30
35
40
8
9
10
11
12
13
14
15
16
17
18
Supply Voltage (V)
Rise Time (ns)
2950 pF
5860 pF
8900 pF
11900 pF
1500 pF
Rise Time vs. Load Capacitance
5
10
15
20
25
30
35
1.35
2.7
5.4
8.1
10.8
Load Capacitance
Rise time (ns)
8V
10V
12V
14V
16V
18V
Fall Times vs. Supply Voltage
0
5
10
15
20
25
30
8
9
10
11
12
13
14
15
16
17
18
Supply Voltage (V)
Fall Times (ns)
5860 pF
2950 pF
8900 pF
11900 pF
1500 pF
Fall Time vs. Load Capacitance
5
7
9
11
13
15
17
19
21
23
25
1.35
2.7
5.4
8.1
10.8
Load Capacitance (nF)
Fall Time (ns)
8V
10V
12V
14V
16V
18V
Rise And Fall Times vs. Temperature
CL=2500pF, Vcc=18V
0
2
4
6
8
10
12
-40
-20
0
25
40
60
85
Tem perature
Rise
time
Fall
time
Max / Min Input vs. Temperature
0
0.5
1
1.5
2
2.5
3
3.5
-40
-20
0
25
40
60
85
Temperature
Max / Min Input (V)
Minimum Input Low
Maximum Input High
5
IXDD409PI / 409SI / 409YI / 409CI IXDI409PI / 409SI / 409YI / 409CI
IXDN409PI / 409SI / 409YI / 409CI
Fig. 9
Fig. 10
Fig. 11
Fig. 12
Fig. 13
Fig. 14
Supply Current vs. Load Capacitance
Vcc = 18V
0.1
1
10
100
1000
1000
10000
Load Capacitance (pF)
Supply Current (mA)
10kHz
50kHz
1MHz
2MHz
100kHz
500kHz
Supply Current vs. Load Capacitance
Vcc = 12V
0.1
1
10
100
1000
1000
10000
Load Capacitance (pF)
Supply Current (mA)
10kHz
50kHz
100kHz
1MHz
2MHz
500kHz
Supply Current vs. Load Capacitance
Vcc = 8V
0.1
1
10
100
1000
1000
10000
Load Capacitance (pF)
Supply Current (mA)
10kHz
50kHz
100kHz
500kHz
1MHz
2MHz
Supply C urrent vs. Frequency
Vcc = 18V
0.1
1
10
100
1000
1
10
100
1000
Frequenc y (kHz)
Supply Current (mA
)
1350 pF
2700 pF
5400 pF
8100 pF
10800 pF
Supply Current vs. Frequency
Vcc = 12V
0.01
0.1
1
10
100
1000
1
10
100
1000
10000
Frequency (kHz)
Supply Current (mA)
1350 pF
2700 pF
5400 pF
8100 pF
10800 pF
Supply Current vs. Frequency
Vcc = 8V
0.01
0.1
1
10
100
1000
1
10
100
1000
10000
Frequency (kHz)
Supply Current (mA)
1350 pF
2700 pF
5400 pF
8100 pF
10800 pF
PDF 
ZIP