2003 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1mA
550
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA
2.5
5.0 V
I
GSS
V
GS
=
30 V, V
DS
= 0
200 nA
I
DSS
V
DS
= V
DSS
T
J
= 25
C
100
A
V
GS
= 0 V
T
J
= 125
C
5 mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
72 m
Note 1
DS98999C(10/03)
PLUS 264
TM
(IXFB)
G = Gate
D = Drain
S = Source
TAB = Drain
S
G
D
(TAB)
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
g
,
Low Intrinsic R
g
High dV/dt,
Low t
rr
Features
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Advantages
PLUS 264
TM
package for clip or spring
mounting
Space savings
High power density
IXFB 72N55Q2
V
DSS
= 550 V
I
D25
= 72 A
R
DS(on)
= 72 m
t
rr
250 ns
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
550
V
V
DGR
T
J
= 25
C to 150C; R
GS
= 1 M
550
V
V
GS
Continuous
30
V
V
GSM
Transient
40
V
I
D25
T
C
= 25
C
72
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
284
A
I
AR
T
C
= 25
C
72
A
E
AR
T
C
= 25
C
60
mJ
E
AS
T
C
= 25
C
5.0
J
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
20
V/ns
T
J
150C, R
G
= 2
P
D
T
C
= 25
C
890
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in.) from case for 10 s
300
C
F
c
Mounting Force
30...120/7.5...27 N/lb
Weight
10
g
Preliminary Data Sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFB 72N55Q2
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
Note 1
40
57
S
C
iss
10500
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1500
pF
C
rss
230
pF
t
d(on)
30
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
23
ns
t
d(off)
R
G
= 1
(External)
58
ns
t
f
10
ns
Q
g(on)
258
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
65
nC
Q
gd
123
nC
R
thJC
0.14
K/W
R
thCK
0.13
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
72
A
I
SM
Repetitive;
288
A
pulse width limited by T
JM
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
250
ns
Q
RM
1.2
C
I
RM
8
A
I
F
= 25A
-di/dt = 100 A/
s
V
R
= 100 V
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 264
TM
Outline
Note: 1. Pulse test, t
300 s, duty cycle d 2 %
2003 IXYS All rights reserved
IXFB 72N55Q2
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
20
40
60
80
100
120
140
160
180
0
2
4
6
8
10
12
14
16
18
20
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
5V
6V
7V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
9
18
27
36
45
54
63
72
0
2
4
6
8
10
12
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
9
18
27
36
45
54
63
72
0
1
2
3
4
5
6
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
7V
5V
6V
Fig. 4. R
DS(on)
Norm alized to I
D25
Value vs.
Junction Tem perature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
on)
-
N
o
rm
a
l
i
z
e
d
I
D
= 72A
I
D
= 36A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
10
20
30
40
50
60
70
80
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
per
es
Fig. 5. R
DS(on)
Norm alized to I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0
20
40
60
80
100
120
140
160 180
I
D
- Amperes
R
D
S
(
on)
-
N
o
rm
a
l
i
z
e
d
T
J
= 125C
T
J
= 25C
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFB 72N55Q2
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Fig. 11. Capacitance
100
1000
10000
100000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
Ca
pac
i
t
anc
e -
pF
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
40
80
120
160
200
240
280
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 275V
I
D
= 36A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
10
20
30
40
50
60
70
80
90
100
3.5
4
4.5
5
5.5
6
6.5
7
V
G S
- Volts
I
D
-
A
m
per
es
T
J
= 125C
25C
-40C
Fig. 12. Maxim um Transient Therm al
Resistance
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
1
10
100
1000
Pulse Width - milliseconds
R
(t
h
)
J
C
-
(
C
/
W
)
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
0
20
40
60
80
100
120
140
160
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40C
25C
125C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
20
40
60
80
100
120
140
160
180
200
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
S D
- Volts
I
S
-
A
m
per
es
T
J
= 125C
T
J
= 25C
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