1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 175
C
N06
60
V
N07
70
V
V
DGR
T
J
= 25
C to 175
C; R
GS
= 10 k
W
N06
60
V
N07
70
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C (Chip capability = 125 A)
76
A
I
D119
T
C
= 119
C, limited by external leads
76
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
304
A
I
AR
T
C
= 25
C
100
A
E
AR
T
C
= 25
C
30
mJ
E
AS
2
J
dv/dt
I
S
I
DM
, di/dt
100 A/
m
s, V
DD
V
DSS
,
5
V/ns
T
J
150
C, R
G
= 2
W
P
D
T
C
= 25
C
360
W
T
J
-55 ... +175
C
T
JM
175
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
M
d
Mounting torque
1.15/10
Nm/lb.in.
Weight
6
g
TO-247 AD
G = Gate,
D = Drain,
S = Source,
TAB = Drain
HiPerFET
TM
Power MOSFETs
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250
m
A
N06
60
V
N07
70
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.0
3.4
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
100
m
A
V
GS
= 0 V
T
J
= 125
C
500
m
A
R
DS(on)
V
GS
= 10 V, I
D
= 40 A
76
N06/N07-11
11
m
W
76
N06/N07-12
12
m
W
Pulse test, t
300
m
s, duty cycle d
2 %
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
Features
q
International standard package
JEDEC TO-247 AD
q
Low R
DS (on)
HDMOS
TM
process
q
Rugged polysilicon gate cell structure
q
Unclamped Inductive Switching (UIS)
rated
q
Low package inductance
- easy to drive and to protect
q
Fast intrinsic Rectifier
Applications
q
DC-DC converters
q
Synchronous rectification
q
Battery chargers
q
Switched-mode and resonant-mode
power supplies
q
DC choppers
q
Temperature and lighting controls
q
Low voltage relays
Advantages
q
Easy to mount with 1 screw
(isolated mounting screw hole)
q
Space savings
q
High power density
92785H (12/98)
(TAB)
V
DSS
I
D25
R
DS(on)
IXFH 76 N06-11
60 V
76 A
11 m
W
IXFH 76 N06-12
60 V
76 A
12 m
W
IXFH 76 N07-11
70 V
76 A
11 m
W
IXFH 76 N07-12
70 V
76 A
12 m
W
Preliminary data sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 40 A, pulse test
30
40
S
C
iss
4400
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
2000
pF
C
rss
1200
pF
t
d(on)
40
ns
t
r
V
GS
= 10 V, V
DS
= 50 V, I
D
= 30 A
70
ns
t
d(off)
R
G
= 1
W
(External)
130
ns
t
f
55
ns
Q
g(on)
240
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 40 A
30
nC
Q
gd
120
nC
R
thJC
0.42
K/W
R
thCK
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
76
A
I
SM
Repetitive; pulse width limited by T
JM
304
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
m
s, duty cycle d
2 %
t
rr
I
F
= 25 A, -di/dt = 100 A/
m
s,
T
J
=
25
C
150
ns
V
R
= 25 V
T
J
= 125
C
250
ns
IXFH
76
N06-11
IXFH
76
N07-11
IXFH
76
N06-12
IXFH
76
N07-12
TO-247 AD (IXFH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
4 - 4
2000 IXYS All rights reserved
IXFH
76
N06-11
IXFH
76
N07-11
IXFH
76
N06-12
IXFH
76
N07-12
V
SD
- Volts
0.0
0.5
1.0
1.5
2.0
I
D
- A
m
p
e
r
e
s
0
50
100
150
200
Fig. 11 Transient Thermal Impedance
Time - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
Th
er
m
a
l
Re
sp
on
s
e
-
K/
W
0.001
0.010
0.100
Single Pulse
D=0.01
D=0.05
D=0.1
D=0.2
D=0.5
Fig. 10 Source Current vs.
Source to Drain Voltage
V
DS
- Volts
0
10
20
30
40
C
a
pa
ci
ta
nce
-
p
F
0
1000
2000
3000
4000
5000
6000
C
rss
C
oss
C
iss
Fig. 9 Capacitance Curves
T
J
=25
C
T
J
=150
C
Gate Charge - nCoulombs
0
50
100
150
200
250
300
350
V
GS
-
Vo
l
t
s
0
2
4
6
8
10
12
14
16
Fig. 7 Gate Charge
V
DS
- Volts
1
10
100
I
D
- A
m
p
e
r
e
s
1
10
100
1000
Limited by R
ds(on)
10
m
s
100ms
100
m
s
10ms
1ms
Fig. 8 Forward Bias Safe Operating Area
VDS = 40V
ID = 38A
IG = 1mA
T
J
=100
C
f = 1MHz
T
J
=150C
DC
T
C
= 25C
D=0.02
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