1997 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
800
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
800
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
8N80
8
A
9N80
9
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
8N80
32
A
9N80
36
A
I
AR
T
C
= 25
C
8N80
8
A
9N80
9
A
E
AR
T
C
= 25
C
18
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
,
5
V/ns
T
J
150
C, R
G
= 2
P
D
T
C
= 25
C
180
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA
800
V
V
DSS
temperature coefficient
0.088
%/K
V
GS(th)
V
DS
= V
GS
, I
D
= 2.5 mA
2
4.5
V
V
GS(th)
temperature coefficient
-0.257
%/K
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
250
A
V
GS
= 0 V
T
J
= 125
C
1 mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
8N80
1.1
Pulse test, t
300
s, duty cycle
2%
9N80
0.9
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD (IXFH)
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
V
DSS
I
D25
R
DS(on)
t
rr
IXFH8N80
800V
8A
1.1
250
ns
IXFH9N80
800V
9A
0.9
250
ns
96527A (8/97)
Preliminary Data Sheet
G
S
D (TAB)
G = Gate
D = Drain
S = Source
TAB = Drain
*Add suffix letter "S" for surface mountable
package
TO-247 SMD*
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
5,017,508
5,049,961 5,187,117 5,486,715
4,850,072 4,931,844
5,034,796
5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH8N80
IXFH9N80
TO-247 AD (IXFH) Outline
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min. typ. max.
I
S
V
GS
= 0
8N80
8 A
9N80
9 A
I
SM
Repetitive; pulse width limited by T
JM
8N80
32 A
9N80
36 A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5 V
Pulse test, t
300
s, duty cycle
2 %
t
rr
T
J
= 25
C
250 ns
T
J
= 125
C
400 ns
Q
RM
T
J
= 25
C
0.5
C
T
J
= 125
C
1.0
C
I
RM
T
J
= 25
C
7.5
A
T
J
= 125
C
9.0
A
I
F
= I
S
-di/dt = 100 A/
s,
V
R
= 100 V
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ. max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
4
7
S
C
iss
2600
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
240
pF
C
rss
60
pF
t
d(on)
35
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
15
ns
t
d(off)
R
G
= 4.7
(External)
70
ns
t
f
35
ns
Q
g(on)
85 130
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
15
30
nC
Q
gd
40
70
nC
R
thJC
0.7 K/W
R
thCK
0.25
K/W
1. Gate
2. Drain
3. Source
4. Drain
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.83
5.21
.190
.205
A1
2.29
2.54
.090
.100
A2
1.91
2.16
.075
.085
b
1.14
1.40
.045
.055
b1
1.91
2.13
.075
.084
C
0.61
0.80
.024
.031
D
20.80
21.34
.819
.840
E
15.75
16.13
.620
.635
e
5.45
BSC
.215
BSC
L
4.90
5.10
.193
.201
L1
2.70
2.90
.106
.114
L2
2.10
2.30
.083
.091
L3
0.00
0.10
.00
.004
L4
1.90
2.10
.075
.083
P
3.55
3.65
.140
.144
Q
5.59
6.20
.220
.244
R
4.32
4.83
.170
.190
S
6.15
BSC
.242
BSC
TO-247 SMD Outline
1997 IXYS All rights reserved
7
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Figure 1. Output Characteristics at 25
O
C
Figure 2. Output Characteristics at 125
O
C
Figure 3. R
DS(on)
normalized to 15A/25
O
C vs. I
D
Figure 4. R
DS(on)
normalized to 15A/25
O
C vs. T
J
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
IXFH8N80
IXFH9N80
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
5,017,508
5,049,961 5,187,117 5,486,715
4,850,072 4,931,844
5,034,796
5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH8N80
IXFH9N80
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Figure 7. Gate Charge
Figure 8. Capacitance Curves
Figure 9. Forward Voltage Drop of the Intrinsic Diode
Figure 11. Transient Thermal Resistance
Figure10. Forward Bias Safe Operating Area
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