1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
500
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
W
500
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
33N50
33
A
35N50
35
A
I
DM
T
C
= 25
C,
33N50
132
A
pulse width limited by T
JM
35N50
140
A
I
AR
T
C
= 25
C
33N50
30
A
35N50
35
A
E
AS
I
D
= 32 A
2.5
J
E
AR
T
C
= 25
C
45
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
m
s, V
DD
V
DSS
,
5
V/ns
T
J
150
C, R
G
= 2
W
P
D
T
C
= 25
C
416
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in) from case for 10 s
300
C
M
d
Mounting torque
0.9/6
Nm/lb.in.
Weight
10
g
Features
International standard packages
Molding epoxies meet UL 94 V-0
flammability classification
Low R
DS (on)
HDMOS
TM
process
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
V
DSS
I
D25
R
DS(on)
IXFK33N50
500 V
33 A 0.16
W
IXFK35N50
500 V
35 A 0.15
W
t
rr
250 ns
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA
500
V
V
DSS
temperature coefficient
0.102
%/K
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2
4
V
V
GS(th)
temperature coefficient
-0.206
%/K
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
200
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
200
m
A
V
GS
= 0 V
T
J
= 125
C
2
mA
R
DS(on)
V
GS
= 10 V, I
D
= 16.5A
33N50
0.16
W
35N50
0.15
W
Pulse test, t
300
m
s, duty cycle d
2 %
97517D (07/00)
G = Gate
D = Drain
S = Source
TAB = Drain
S
G
D
TO-264 AA
D (TAB)
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Preliminary data
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
18
28
S
C
iss
5200 5700
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
640
750
pF
C
rss
240
310
pF
t
d(on)
35
45
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
42
50
ns
t
d(off)
R
G
= 1
W
(External),
110
140
ns
t
f
23
35
ns
Q
g(on)
227
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
29
nC
Q
gd
110
nC
R
thJC
0.3
K/W
R
thCK
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
33
A
I
SM
Repetitive; pulse width limited by T
JM
132
A
V
SD
I
F
= 100 A, V
GS
= 0 V,
1.5
V
Pulse test, t
300
m
s, duty cycle d
2 %
t
rr
250
ns
Q
RM
I
F
= I
S
, -di/dt = 100 A/
m
s, V
R
= 100 V
0.75
m
C
I
RM
7
A
IXFK 33N50
IXFK 35N50
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
TO-264 AA Outline
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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