2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
500
V
V
DGR
T
J
= 25
C to 150C; R
GS
= 1 M
500
V
V
GS
Continuous
30
V
V
GSM
Transient
40
V
I
D25
T
C
= 25
C
66
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
264
A
I
AR
T
C
= 25
C
66
A
E
AR
T
C
= 25
C
75
mJ
E
AS
T
C
= 25
C
4.0
J
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
20
V/ns
T
J
150C, R
G
= 2
P
D
T
C
= 25
C
735
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in) from case for 10 s
300
C
M
d
Mounting torque
TO-264
0.9/6 Nm/lb.in.
Weight
PLUS-247
6
g
TO-264
10
g
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Low intrinsic R
g
, low t
rr
Features
Double metal process for low gate
resistance
International standard packages
Epoxy
meet
UL
94
V-0, flammability
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8 mA
2.0
4.5
V
I
GSS
V
GS
=
30 V
DC
, V
DS
= 0
200 nA
I
DSS
V
DS
= V
DSS
T
J
= 25
C
50
A
V
GS
= 0 V
T
J
= 125
C
2 mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
80 m
Pulse test, t
300 s, duty cycle d 2 %
G = Gate
D = Drain
S = Source
TAB = Drain
DS98983A(7/04)
TO-264 AA (IXFK)
S
G
D
D (TAB)
V
DSS
= 500 V
I
D25
= 66 A
R
DS(on)
= 80 m
t
rr
250 ns
IXFK 66N50Q2
IXFX 66N50Q2
PLUS 247
TM
(IXFX)
G
D
D (TAB)
Preliminary Data Sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
30
44
S
C
iss
8400
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1290
pF
C
rss
310
pF
t
d(on)
32
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
16
ns
t
d(off)
R
G
= 1.0
(External),
60
ns
t
f
10
ns
Q
g(on)
200
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
47
nC
Q
gd
98
nC
R
thJC
0.17
K/W
R
thCK
TO-264
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ. max.
I
S
V
GS
= 0 V
66
A
I
SM
Repetitive; pulse width limited by T
JM
264
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d 2 %
t
rr
250 ns
Q
RM
1
C
I
RM
10
A
I
F
= 25A, -di/dt = 100 A/
s, V
R
= 100 V
TO-264 AA Outline
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
IXFK 66N50Q2
IXFX 66N50Q2
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.83
5.21
.190
.205
A
1
2.29
2.54
.090
.100
A
2
1.91
2.16
.075
.085
b
1.14
1.40
.045
.055
b
1
1.91
2.13
.075
.084
b
2
2.92
3.12
.115
.123
C
0.61
0.80
.024
.031
D
20.80
21.34
.819
.840
E
15.75
16.13
.620
.635
e
5.45 BSC
.215 BSC
L
19.81
20.32
.780
.800
L1
3.81
4.32
.150
.170
Q
5.59
6.20
.220 0.244
R
4.32
4.83
.170
.190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247
TM
Outline
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
2004 IXYS All rights reserved
IXFK 66N50Q2
IXFX 66N50Q2
Fig. 2. Extended Output Characteristics
@ 25
C
0
20
40
60
80
100
120
140
160
0
2
4
6
8
10
12
14
16
18
20
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 3. Output Characteristics
@ 125
C
0
10
20
30
40
50
60
70
0
2
4
6
8
10
12
14
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
7V
5V
6V
3.5V
4.5V
5.5V
Fig. 1. Output Characteristics
@ 25
C
0
10
20
30
40
50
60
70
0
1
2
3
4
5
6
7
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
7V
5V
6V
5.5V
4.5V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
o n )
-
N
o
rm
a
l
i
z
e
d
I
D
= 66A
I
D
= 33A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
10
20
30
40
50
60
70
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
per
es
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
0
20
40
60
80
100
120
140
160
I
D
- Amperes
R
D
S
(
o n )
-
N
o
rm
a
l
i
z
e
d
T
J
= 125C
T
J
= 25C
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK 66N50Q2
IXFX 66N50Q2
Fig. 11. Capacitance
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
apac
i
t
anc
e -
pi
c
o
F
a
r
ads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100 120 140 160 180 200
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 250V
I
D
= 33A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
10
20
30
40
50
60
70
80
90
100
3
3.5
4
4.5
5
5.5
6
6.5
7
V
G S
- Volts
I
D
-
A
m
per
es
T
J
= 125C
25C
-40C
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
0
20
40
60
80
100
120
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40C
25C
125C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
20
40
60
80
100
120
140
160
180
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
V
S D
- Volts
I
S
-
A
m
per
es
T
J
= 125C
T
J
= 25C
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
1000
10
100
1000
V
D S
- Volts
I
D
-
A
m
per
es
100s
1ms
DC
T
J
= 150C
T
C
= 25C
R
DS(on)
Limit
10ms
25s
2004 IXYS All rights reserved
IXFK 66N50Q2
IXFX 66N50Q2
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e
0 . 0 0
0 . 0 1
0 . 1 0
1 . 0 0
0 . 1
1
1 0
1 0 0
1 0 0 0
1 0 0 0 0
Pu ls e W id th - m illis e c o n d s
R
( t h ) J
C
-
C /
W
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