1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
BV
CES
I
C
= 3 mA, V
GE
= 0 V
1000
V
V
GE(th)
I
C
= 250
m
A, V
GE
= V
GE
2.5
5.0
V
I
CES
V
CE
= 0.8, V
CES
T
J
= 25
C
250
m
A
V
GE
= 0 V
T
J
= 125
C
1
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
CE90
, V
GE
= 15
12N100
3.5
V
12N100A
4.0
V
IGBT
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
1000
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
W
1000
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
24
A
I
C90
T
C
= 90
C
12
A
I
CM
T
C
= 25
C, 1 ms
48
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 150
W
I
CM
= 24
A
(RBSOA)
Clamped inductive load, L = 300
m
H
@ 0.8 V
CES
P
C
T
C
= 25
C
100
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque with screw M3
0.45/4 Nm/lb.in.
Mounting torque with screw M3.5
0.55/5 Nm/lb.in.
Weight
4
g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
V
CES
I
C25
V
CE(sat)
IXGA/IXGP12N100
1000 V
24 A
3.5 V
IXGA/IXGP12N100A
1000 V
24 A
4.0 V
95591A (3/97)
Features
International standard packages
JEDEC TO-220AB and TO-263AA
Second generation HDMOS
TM
process
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Easy to mount with one screw
Reduces assembly time and cost
High power density
G
C
E
TO-220AB (IXGP)
G
E
TO-263 (IXGA)
C (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
6
10
S
Pulse test, t
300
m
s, duty cycle
2 %
Q
g
65
90
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
8
20
nC
Q
gc
24
45
nC
t
d(on)
100
ns
t
ri
200
ns
t
d(off)
850
1000
ns
t
fi
12N100A
500
700
ns
12N100
800
1000
ns
E
off
12N100A
2.5
4
mJ
t
d(on)
100
ns
t
ri
200
ns
E
on
1.1
mJ
t
d(off)
900
ns
t
fi
12N100A
950
ns
12N100
1250
ns
E
off
12N100A
4
mJ
12N100
6
mJ
R
thJC
1.25
K/W
R
thCK
0.25
K/W
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V, L = 300
m
H
V
CE
= 800 V, R
G
= R
off
= 120
W
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V, L = 300
m
H
V
CE
= 800 V, R
G
= R
off
= 120
W
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
IXGA12N100
IXGP12N100
IXGA12N100A
IXGP12N100A
TO-263 AA (IXGA) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
TO-220 AB (IXGP) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
12.70
13.97
0.500
0.550
B
14.73
16.00
0.580
0.630
C
9.91
10.66
0.390
0.420
D
3.54
4.08
0.139
0.161
E
5.85
6.85
0.230
0.270
F
2.54
3.18
0.100
0.125
G
1.15
1.65
0.045
0.065
H
2.79
5.84
0.110
0.230
J
0.64
1.01
0.025
0.040
K
2.54
BSC
0.100
BSC
M
4.32
4.82
0.170
0.190
N
1.14
1.39
0.045
0.055
Q
0.35
0.56
0.014
0.022
R
2.29
2.79
0.090
0.110
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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