1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
500
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
500
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
21N50
21
A
24N50
24
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
21N50
84
A
24N50
96
A
P
D
T
C
= 25
C
300
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque
1.13/10
Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD (IXTH)
MegaMOS
TM
FET
N-Channel Enhancement Mode
TO-204 AE (IXTM)
V
DSS
I
D25
R
DS(on)
IXTH / IXTM 21N50
500 V
21 A
0.25
IXTH / IXTM 24N50
500 V
24 A
0.23
G = Gate,
D = Drain,
S = Source,
TAB = Drain
D
G
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
2
4
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
200
A
V
GS
= 0 V
T
J
= 125
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
21N50
0.25
24N50
0.23
Pulse test, t
300
s, duty cycle d
2 %
Features
l
International standard packages
l
Low R
DS (on)
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Low package inductance (< 5 nH)
- easy to drive and to protect
l
Fast switching times
Applications
l
Switch-mode and resonant-mode
power supplies
l
Motor controls
l
Uninterruptible Power Supplies (UPS)
l
DC choppers
Advantages
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l
Space savings
l
High power density
91536F(5/97)
D (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4
2000 IXYS All rights reserved
IXTH 21N50
IXTH 24N50
IXTM 21N50
IXTM 24N50
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
11
21
S
C
iss
4200
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
450
pF
C
rss
135
pF
t
d(on)
24
30
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
33
45
ns
t
d(off)
R
G
= 2
,
(External)
65
80
ns
t
f
30
40
ns
Q
g(on)
160
190
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
28
40
nC
Q
g d
75
85
nC
R
thJC
0.42
K/W
R
thCK
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0
21N50
21
A
24N50
24
A
I
SM
Repetitive;
21N50
84
A
pulse width limited by T
JM
24N50
96
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
I
F
= I
S
, -di/dt = 100 A/
s, V
R
= 100 V
600
ns
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
TO-247 AD (IXTH) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
6.4
11.4
.250
.450
A1
1.53
3.42
.060
.135
b
1.45
1.60
.057
.063
D
22.22
.875
e
10.67
11.17
.420
.440
e1
5.21
5.71
.205
.225
L
11.18
12.19
.440
.480
p
3.84
4.19
.151
.165
p 1 3.84
4.19
.151
.165
q
30.15 BSC
1.187 BSC
R
12.58
13.33
.495
.525
R 1
3.33
4.77
.131
.188
s
16.64
17.14
.655
.675
TO-204 AE(IXTM) Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
Pins
1 - Gate
2 - Source
Case - Drain
1 2 3
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 4
2000 IXYS All rights reserved
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
BV/
V
G(
t
h
)
- No
rm
a
liz
e
d
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V
GS(th)
T
C
- Degrees C
-50
-25
0
25
50
75
100 125 150
I
D
-
Am
per
es
0
10
20
30
21N50
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
R
DS
(
on)
-
Nor
m
al
i
z
ed
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
I
D
- Amperes
0
5
10
15
20
25
30
35
40 45 50
R
DS
(
on)
-
Nor
m
al
i
z
ed
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
V
GS
= 10V
V
GS
- Volts
0
1
2
3
4
5
6
7
8
9
10
I
D
-
Am
per
es
0
5
10
15
20
25
30
35
40
45
50
V
DS
- Volts
0
5
10
15
20
25
30
35
I
D
-
Am
per
es
0
5
10
15
20
25
30
35
40
45
50
5V
7V
V
GS
= 10V
BV
CES
24N50
V
GS
= 15V
6V
I
D
= 12A
T
J
= 25C
T
J
= 25C
T
J
= 25C
IXTH 21N50
IXTH 24N50
IXTM 21N50
IXTM 24N50
Fig. 1 Output Characteristics
Fig. 2 Input Admittance
Fig. 3 R
DS(on)
vs. Drain Current
Fig. 4 Temperature Dependence
of Drain to Source Resistance
Fig. 5 Drain Current vs.
Fig. 6 Temperature Dependence of
Case Temperature
Breakdown and Threshold Voltage
4 - 4
2000 IXYS All rights reserved
V
DS
- Volts
1
10
100
I
D
-
Am
per
es
0.1
1
10
100
Gate Charge - nCoulombs
0
25
50
75
100 125 150 175 200
V
GE
- V
o
lts
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Volt
0.00
0.25
0.50
0.75
1.00
1.25
1.50
I
D
-
Am
per
es
0
5
10
15
20
25
30
35
40
45
50
V
DS
- Volts
0
5
10
15
20
25
C
apaci
t
ance -
pF
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Time - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
Ther
m
a
l
R
e
s
ponse -
K
/
W
0.001
0.01
0.1
1
D=0.2
D=0.02
D=0.5
D=0.1
D=0.05
D=0.01
Single pulse
C
rss
C
oss
V
DS
= 250V
I
D
= 12.5A
I
G
= 10mA
500
10s
100s
1ms
10ms
100ms
Limited by R
DS(on)
C
iss
T
J
= 25C
T
J
= 125C
f = 1 Mhz
V
DS
= 25V
IXTH 21N50
IXTH 24N50
IXTM 21N50
IXTM 24N50
Fig.7 Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
Fig.11 Transient Thermal Impedance
Fig.9 Capacitance Curves
Fig.10 Source Current vs. Source
to Drain Voltage
PDF 
ZIP