2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
D S S
T
J
= 25
C to 150
C
500
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
500
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
30
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
120
A
P
D
T
C
= 25
C
360
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
TT
T
T
L
L
L
L
L
1.6 mm (0.063 in) from case for 10 s
300
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
6
g
TO-247 AD
G = Gate,
D = Drain,
S = Source,
TAB = Drain
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
D S S
V
GS
= 0 V, I
D
= 5 mA
500
V
BV
DSS
temperature coefficient
.087
%/k
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
2
4
V
V
GS(th)
temperature coefficient
-0.25
%/k
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
200
A
V
GS
= 0 V
T
J
= 125
C
3
mA
R
D S ( o n )
V
GS
= 10 V, I
D
= 0.5 I
D25
30N50
0.17
Pulse test, t
300
s, duty cycle d
2 %
Features
International standard package
JEDEC TO-247 AD
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Fast switching times
Applications
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Advantages
Easy to mount with 1 screw
(TO-247)
(isolated mounting screw hole)
Space savings
High power density
94569-E (8/02)
D (TAB)
MegaMOS
TM
FET
N-Channel Enhancement Mode
IXTH 30N50
V
V
V
V
V
DSS
=
500 V
500 V
500 V
500 V
500 V
II
II
I
D (cont)
=
30 A
30 A
30 A
30 A
30 A
R
R
R
R
R
DS(on)
=
0.17
0.17
0.17
0.17
0.17
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
18
28
S
C
iss
5680
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
635
pF
C
rss
240
pF
t
d(on)
35
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
42
ns
t
d(off)
R
G
= 1
,
(External)
110
ns
t
f
26
ns
Q
g(on)
227
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
29
nC
Q
gd
110
nC
R
thJC
0.35
K/W
R
thCK
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
30
A
I
SM
Repetitive; pulse width limited by T
JM
120
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
I
F
= I
S
, -di/dt = 100 A/
s, V
R
= 100 V
850
ns
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
TO-247 AD Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
IXTH 30N50
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