2000 IXYS All rights reserved
1 - 4
021
IXYS reserves the right to change limits, test conditions and dimensions.
Features
q
NPT IGBT technology
q
low saturation voltage
q
low switching losses
q
switching frequency up to 30 kHz
q
square RBSOA, no latch up
q
high short circuit capability
q
positive temperature coefficient for
easy parallelling
q
MOS input, voltage controlled
q
ultra fast free wheeling diodes
q
solderable pins for PCB mounting
q
package with copper base plate
Advantages
q
space savings
q
reduced protection circuits
q
package designed for wave soldering
Typical Applications
q
AC motor control
q
AC servo and robot drives
q
power supplies
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25C to 150C
1200
V
V
GES
20
V
I
C25
T
C
= 25C
30
A
I
C80
T
C
= 80C
20
A
RBSOA
V
GE
=
15 V; R
G
= 82
W
; T
VJ
= 125C
I
CM
= 35
A
Clamped inductive load; L = 100 H
V
CEK
V
CES
t
SC
V
CE
= V
CES
; V
GE
=
15 V; R
G
= 82
W
; T
VJ
= 125C
10
s
(SCSOA)
non-repetitive
P
tot
T
C
= 25C
140
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 15 A; V
GE
= 15 V; T
VJ
= 25C
2.0
2.6
V
T
VJ
= 125C
2.3
V
V
GE(th)
I
C
= 0.6 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25C
0.9
mA
T
VJ
= 125C
0.8
mA
I
GES
V
CE
= 0 V; V
GE
=
20 V
200
nA
t
d(on)
100
ns
t
r
75
ns
t
d(off)
500
ns
t
f
70
ns
E
on
2.3
mJ
E
off
1.8
mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
1000
pF
Q
Gon
V
CE
= 600V; V
GE
= 15 V; I
C
= 15 A
70
nC
R
thJC
(per IGBT)
0.88 K/W
Inductive load, T
VJ
= 125C
V
CE
= 600 V; I
C
= 15 A
V
GE
= 15 V; R
G
= 82
W
I
C25
= 30 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.0 V
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
13
17
1
2
3
4
7
8
9
10
11
12
5
6
15
16
14
MWI 15-12 A7
Preliminary Data
2000 IXYS All rights reserved
2 - 4
Diodes
Symbol
Conditions
Maximum Ratings
I
F25
T
C
= 25C
25
A
I
F80
T
C
= 80C
17
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 15 A; V
GE
= 0 V; T
VJ
= 25C
2.4
2.7
V
T
VJ
= 125C
1.7
V
I
RM
I
F
= 15 A; di
F
/dt = -400 A/s; T
VJ
= 125C
16
A
t
rr
V
R
= 600 V; V
GE
= 0 V
130
ns
R
thJC
(per diode)
2.1 K/W
Module
Symbol
Conditions
Maximum Ratings
T
VJ
-40...+150
C
T
stg
-40...+125
C
V
ISOL
I
ISOL
1 mA; 50/60 Hz
2500
V~
M
d
Mounting torque (M5)
2.7 - 3.3
Nm
Symbol
Conditions
Characteristic Values
min.
typ.
max.
R
pin-chip
5
m
d
S
Creepage distance on surface
6
mm
d
A
Strike distance in air
6
mm
R
thCH
with heatsink compound
0.02
K/W
Weight
180
g
MWI 15-12 A7
Dimensions in mm (1 mm = 0.0394")
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
GE
= 15 V; T
J
= 125C)
V
0
= 1.37 V; R
0
= 62 m
Free Wheeling Diode (typ. at T
J
= 125C)
V
0
= 1.327 V; R
0
= 30 m
Thermal Response
IGBT (typ.)
C
th1
= 0.156 J/K; R
th1
= 0.685 K/W
C
th2
= 1.162 J/K; R
th2
= 0.195 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.065 J/K; R
th1
= 1.758 K/W
C
th2
= 0.639 J/K; R
th2
= 0.342 K/W
Higher magnification see outlines.pdf
2000 IXYS All rights reserved
3 - 4
0
200
400
600
800
1000
0
10
20
30
40
0
40
80
120
160
200
0
1
2
3
4
5
6
7
0
10
20
30
40
50
0
20
40
60
80
100
0
5
10
15
20
0
1
2
3
4
5
6
7
0
10
20
30
40
50
T
VJ
= 25C
T
VJ
= 125C
V
CE
= 600V
I
C
= 15A
V
CE
V
I
C
V
CE
A
I
C
V
nC
Q
G
-di/dt
V
V
GE
I
RM
t
rr
A/
m
s
MWI1512A7
T
VJ
= 125C
V
R
= 600V
I
F
= 15A
I
RM
t
rr
9V
11V
V
GE
= 17V
15V
13V
A
11V
V
GE
= 17V
15V
13V
A
4
6
8
10
12
14
16
0
10
20
30
40
50
V
CE
= 20V
V
V
GE
A
I
C
T
VJ
= 25C
T
VJ
= 125C
0
1
2
3
4
0
10
20
30
40
50
V
V
F
I
F
T
VJ
= 25C
T
VJ
= 125C
A
ns
9V
Fig. 1
Typ. output characteristics
Fig. 2 Typ. output characteristics
Fig. 3
Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
Fig. 5
Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
MWI 15-12 A7
2000 IXYS All rights reserved
4 - 4
Fig. 7
Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current
times versus collector current
Fig. 9
Typ. turn on energy and switching
Fig.10 Typ. turn off energy and switching
times versus gate resistor
times versus gate resistor
Fig. 11 Reverse biased safe operating area
Fig. 12 Typ. transient thermal impedance
RBSOA
0
10
20
30
0
2
4
6
0
40
80
120
0
10
20
30
0
2
4
6
0
200
400
600
0.00001 0.0001 0.001
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
0
200
400
600
800
0
20
40
60
80
100
120
140
0
1
2
3
0
50
100
150
single pulse
V
CE
= 600V
V
GE
= 15V
R
G
= 82
W
T
VJ
= 125C
MWI1512A7
V
CE
= 600V
V
GE
= 15V
I
C
= 15A
T
VJ
= 125C
0
200
400
600
800
1000 1200 1400
0
10
20
30
40
R
G
= 82
W
T
VJ
= 125C
V
CE
= 600V
V
GE
= 15V
R
G
= 82
W
T
VJ
= 125C
E
on
V
CE
= 600V
V
GE
= 15V
I
C
= 15A
T
VJ
= 125C
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
W
R
G
W
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
IGBT
diode
V
A
mJ
ns
ns
mJ
MWI 15-12 A7
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