2002 IXYS All rights reserved
1 - 2
250
IXYS reserves the right to change limits, test conditions and dimensions.
Features
NPT
3
IGBTs
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant
circuits
HiPerFRED
TM
diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
Typical Applications
AC drives
power supplies with power factor
correction
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25C to 150C
1200
V
V
GES
20
V
I
C25
T
C
= 25C
52
A
I
C80
T
C
= 80C
36
A
I
CM
V
GE
=
15 V; R
G
= 39
; T
VJ
= 125C
50
A
V
CEK
RBSOA; clamped inductive load; L = 100 H
V
CES
t
SC
V
CE
= 900 V; V
GE
=
15 V; R
G
= 39
; T
VJ
= 125C
10
s
SCSOA; non-repetitive
P
tot
T
C
= 25C
225
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 25 A; V
GE
= 15 V; T
VJ
= 25C
1.9
2.4
V
T
VJ
= 125C
2.1
V
V
GE(th)
I
C
= 1 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V;
T
VJ
= 25C
0.4
mA
T
VJ
= 125C
0.4
mA
I
GES
V
CE
= 0 V; V
GE
=
20 V
200
nA
t
d(on)
150
ns
t
r
60
ns
t
d(off)
680
ns
t
f
50
ns
E
on
3.0
mJ
E
off
2.5
mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
2
nF
Q
Gon
V
CE
= 600 V; V
GE
= 15 V; I
C
= 25 A
250
nC
R
thJC
(per IGBT)
0.55 K/W
Inductive load, T
VJ
= 125C
V
CE
= 600 V; I
C
= 25 A
V
GE
= 15 V; R
G
= 39
I
C25
= 52 A
V
CES
= 1200 V
V
CE(sat) typ.
= 1.9 V
IGBT Module
Sixpack
Short Circuit SOA Capability
Square RBSOA
Advanced Technical Information
MWI 25-12 E7
13
17
1
2
3
4
7
8
9
10
11
12
5
6
15
16
14
2002 IXYS All rights reserved
2 - 2
250
Diodes
Symbol
Conditions
Maximum Ratings
I
F25
T
C
= 25C
50
A
I
F80
T
C
= 80C
33
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 25 A; V
GE
= 0 V; T
VJ
= 25C
2.3
2.7
V
T
VJ
= 125C
1.7
V
I
RM
I
F
= 25 A; di
F
/dt = -400 A/s; T
VJ
= 125C
20
A
t
rr
V
R
= 600 V; V
GE
= 0 V
200
ns
R
thJC
(per diode)
1.19 K/W
Module
Symbol
Conditions
Maximum Ratings
T
VJ
-40...+150
C
T
stg
-40...+125
C
V
ISOL
I
ISOL
1 mA; 50/60 Hz
2500
V~
M
d
Mounting torque (M5)
2.7 - 3.3
Nm
Symbol
Conditions
Characteristic Values
min.
typ.
max.
R
pin-chip
5
m
d
S
Creepage distance on surface
6
mm
d
A
Strike distance in air
6
mm
R
thCH
with heatsink compound
0.02
K/W
Weight
180
g
MWI 25-12 E7
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
GE
= 15 V; T
J
= 125C)
V
0
= 0.95 V; R
0
= 48 m
Free Wheeling Diode (typ. at T
J
= 125C)
V
0
= 1.3 V; R
0
= 16.0 m
Thermal Response
IGBT (typ.)
C
th1
= 0.136 J/K; R
th1
= 0.418 K/W
C
th2
= 1.309 J/K; R
th2
= 0.132 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.081 J/K; R
th1
= 0.973 K/W
C
th2
= 0.915 J/K; R
th2
= 0.217 K/W
Dimensions in mm (1 mm = 0.0394")
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