2000 IXYS All rights reserved
1 - 4
MWI 50-12 A7
MWI 50-12 A7T
023
IXYS reserves the right to change limits, test conditions and dimensions.
Features
q
NPT IGBT technology
q
low saturation voltage
q
low switching losses
q
switching frequency up to 30 kHz
q
square RBSOA, no latch up
q
high short circuit capability
q
positive temperature coefficient for
easy parallelling
q
MOS input, voltage controlled
q
ultra fast free wheeling diodes
q
solderable pins for PCB mounting
q
package with copper base plate
Advantages
q
space savings
q
reduced protection circuits
q
package designed for wave soldering
Typical Applications
q
AC motor control
q
AC servo and robot drives
q
power supplies
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25C to 150C
1200
V
V
GES
20
V
I
C25
T
C
= 25C
85
A
I
C80
T
C
= 80C
60
A
RBSOA
V
GE
=
15 V; R
G
= 22
W
; T
VJ
= 125C
I
CM
= 100
A
Clamped inductive load; L = 100 H
V
CEK
V
CES
t
SC
V
CE
= V
CES
; V
GE
=
15 V; R
G
= 22
W
; T
VJ
= 125C
10
s
(SCSOA)
non-repetitive
P
tot
T
C
= 25C
350
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 50 A; V
GE
= 15 V; T
VJ
= 25C
2.2
2.7
V
T
VJ
= 125C
2.5
V
V
GE(th)
I
C
= 2 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25C
4
mA
T
VJ
= 125C
3
mA
I
GES
V
CE
= 0 V; V
GE
=
20 V
200
nA
t
d(on)
100
ns
t
r
70
ns
t
d(off)
500
ns
t
f
70
ns
E
on
7.6
mJ
E
off
5.6
mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
3300
pF
Q
Gon
V
CE
= 600V; V
GE
= 15 V; I
C
= 50 A
230
nC
R
thJC
(per IGBT)
0.35 K/W
Inductive load, T
VJ
= 125C
V
CE
= 600 V; I
C
= 50 A
V
GE
= 15 V; R
G
= 22
W
I
C25
= 85 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.2 V
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
Type:
NTC - Option:
MWI 50-12 A7
without NTC
MWI 50-12 A7T
with NTC
NTC
13
17
1
2
3
4
7
8
9
10
11
12
5
6
15
16
14
T
T
Preliminary Data
2000 IXYS All rights reserved
2 - 4
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
GE
= 15 V; T
J
= 125C)
V
0
= 1.5 V; R
0
= 20.7 mW
Free Wheeling Diode (typ. at T
J
= 125C)
V
0
= 1.3 V; R
0
= 11.3 mW
Thermal Response
IGBT (typ.)
C
th1
= 0.22 J/K; R
th1
= 0.26 K/W
C
th2
= 1.74 J/K; R
th2
= 0.09 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.16 J/K; R
th1
= 0.483 K/W
C
th2
= 1.37 J/K; R
th2
= 0.127 K/W
Diodes
Symbol
Conditions
Maximum Ratings
I
F25
T
C
= 25C
110
A
I
F80
T
C
= 80C
70
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 50 A; V
GE
= 0 V; T
VJ
= 25C
2.2
2.6
V
T
VJ
= 125C
1.6
1.8
V
I
RM
I
F
= 50 A; di
F
/dt = -400 A/s; T
VJ
= 125C
40
A
t
rr
V
R
= 600 V; V
GE
= 0 V
200
ns
R
thJC
(per diode)
0.61 K/W
Temperature Sensor NTC (MWI ... A7T version only)
Symbol
Conditions
Characteristic Values
min.
typ.
max.
R
25
T = 25C
4.75
5.0
5.25
k
W
B
25/50
3375
K
Module
Symbol
Conditions
Maximum Ratings
T
VJ
-40...+150
C
T
stg
-40...+125
C
V
ISOL
I
ISOL
1 mA; 50/60 Hz
2500
V~
M
d
Mounting torque (M5)
2.7 - 3.3
Nm
Symbol
Conditions
Characteristic Values
min.
typ.
max.
R
pin-chip
5
m
W
d
S
Creepage distance on surface
6
mm
d
A
Strike distance in air
6
mm
R
thCH
with heatsink compound
0.02
K/W
Weight
180
g
MWI 50-12 A7
MWI 50-12 A7T
Dimensions in mm (1 mm = 0.0394")
Higher magnification see outlines.pdf
2000 IXYS All rights reserved
3 - 4
0
200
400
600
800
1000
0
40
80
120
0
100
200
300
0
1
2
3
4
0
30
60
90
120
150
180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
20
40
60
80
100
120
0
50
100
150
200
250
0
5
10
15
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
20
40
60
80
100
120
13V
11V
T
J
= 25C
V
GE
=17V
T
J
= 125C
V
CE
= 600V
I
C
= 50A
15V
5
6
7
8
9
10
11
0
20
40
60
80
100
120
13V
11V
V
GE
=17V
15V
V
CE
= 20V
T
J
= 25C
9V
9V
V
CE
V
A
I
C
V
CE
A
I
C
V
V
V
V
GE
V
F
A
I
C
A
I
F
nC
Q
G
-di/dt
V
V
GE
A
I
RM
t
rr
ns
A/
m
s
MWI50-12A7
T
J
= 125C
V
R
= 600V
I
F
= 50A
T
J
= 25C
T
J
= 125C
I
RM
t
rr
Fig. 1
Typ. output characteristics
Fig. 2 Typ. output characteristics
Fig. 3
Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
Fig. 5
Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
MWI 50-12 A7
MWI 50-12 A7T
2000 IXYS All rights reserved
4 - 4
Fig. 7
Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current
times versus collector current
Fig. 9
Typ. turn on energy and switching
Fig.10 Typ. turn off energy and switching
times versus gate resistor
times versus gate resistor
Fig. 11 Reverse biased safe operating area
Fig. 12 Typ. transient thermal impedance
RBSOA
0
20
40
60
80
100
0
6
12
18
24
0
30
60
90
120
0
20
40
60
80
100
0
2
4
6
8
10
12
0
100
200
300
400
500
600
0.00001
0.0001
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
0
10 20 30 40 50 60 70 80 90 100
0
2
4
6
8
10
0
300
600
900
1200
1500
0
10 20 30 40 50 60 70 80 90 100
0
5
10
15
20
0
60
120
180
240
single pulse
V
CE
= 600V
V
GE
= 15V
R
G
= 22
W
T
J
= 125C
MWI50-12A7
V
CE
= 600V
V
GE
= 15V
I
C
= 50A
T
J
= 125C
0
200
400
600
800
1000 1200
0
20
40
60
80
100
120
R
G
= 22
W
T
J
= 125C
V
CEK
< V
CES
V
CE
= 600V
V
GE
= 15V
R
G
= 22
W
T
J
= 125C
E
on
V
CE
= 600V
V
GE
= 15V
I
C
= 50A
T
J
= 125C
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
mJ
E
off
mJ
E
on
ns
t
ns
t
R
G
W
R
G
W
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
IGBT
diode
A
V
MWI 50-12 A7
MWI 50-12 A7T
PDF 
ZIP