2000 IXYS All rights reserved
1 - 2
V
RRM
= 1200-1600 V
I
dAV
= 51 A
V
RRM
Type
V
1200
VUB 51-12 NO1
1600
VUB 51-16 NO1
IGBT
Fast Recovery Diode
Module
Rectifier Diodes
Symbol
Test Conditions
Maximum Ratings
V
RRM
1200 / 1600
V
I
dAV
T
H
= 110
C, sinusoidal 120
51
A
I
dAVM
limited by leads
70
A
I
FSM
T
VJ
= 45
C, t = 10 ms, V
R
= 0 V
300
A
T
VJ
= 150
C, t = 10 ms, V
R
= 0 V
260
A
I
2
t
T
VJ
= 45
C, t = 10 ms, V
R
= 0 V
450
A
T
VJ
= 150
C, t = 10 ms, V
R
= 0V
340
A
P
tot
T
H
= 25
C per diode
80
W
-
V
CES
T
VJ
= 25
C to 150
C
1200
V
V
GE
Continuous
20
V
I
C25
T
H
= 25
C, DC
31
A
I
C80
T
H
= 80
C, DC
21
A
I
CM
t
p
= Pulse width limited by T
VJM
62
A
P
tot
T
H
= 25
C
130
W
V
RRM
1200
V
I
FAV
T
H
= 80
C, rectangular d = 0.5
9
A
I
FRMS
T
H
= 80
C, rectangular d = 0.5
14
A
I
FRM
T
H
= 80
C, t
P
= 10
m
s, f = 5 kHz
90
A
I
FSM
T
VJ
= 45
C, t = 10 ms
75
A
T
VJ
= 150
C, t = 10 ms
60
A
P
tot
T
H
= 25
C
40
W
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
V~
M
d
Mounting torque
(M5)
2-2.5
Nm
(10-32 unf)
18-22
lb.in.
Weight
typ.
35
g
Features
q
Soldering connections for PCB
mounting
q
Isolation voltage 3600 V~
q
Ultrafast freewheel diode
q
Convenient package outline
q
UL registered E 72873
Applications
q
Drive Inverters with brake system
Advantages
q
2 functions in one package
q
No external isolation
q
Easy to mount with two screws
q
Suitable for wave soldering
q
High temperature and power cycling
capability
Dimensions in mm (1 mm = 0.0394")
VUB 51
749
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
Preliminary data
1 2
4 5
6
7
9 10
2000 IXYS All rights reserved
2 - 2
VUB 51
I
R
V
R
= V
RRM
,
T
VJ
= 25
C
0.2
mA
V
R
= 800 V, T
VJ
=150
C
6
mA
V
F
I
F
= 12 A,
T
VJ
= 25
C
2.7
V
V
T0
For power-loss calculations only
1.65
V
r
T
T
VJ
= 150
C
46
m
W
I
RM
I
F
= 25 A,
-di
F
/dt = 100 A/
m
s
6.5
7
A
V
R
= 100 V T
J
= 100
C
t
rr
I
F
= 1 A,
-di
F
/dt = 100 A/
m
s
50
70
ns
V
R
= 30 V
T
J
= 100
C
R
thJH
3.12 K/W
d
S
Creep distance on surface
12.7 mm
d
A
Strike distance in air
9.4 mm
a
Maximum allowable acceleration
50 m/s
2
Symbol
Test Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
Rectifier Diodes
V
BR(CES)
V
GS
= 0 V, I
C
= 3 mA
1200
V
V
GE(th)
I
C
= 10 mA
5
7.5
V
I
GES
V
GE
=
20 V
500
nA
I
CES
T
VJ
=
25
C,
V
CE
= 0.8 V
CES
250
m
A
T
VJ
=
125
C, V
CE
= 0.8 V
CES
1
mA
V
CEsat
V
GE
= 15 V, I
C
= 25 A
3.5
V
t
SC
V
GE
= 15 V, V
CE
= 0.6 V
CES
, T
VJ
=
125
C,
10
m
s
(SCSOA)
R
G
= 4.7
W
, non repetitive
I
C
V
GE
= 15 V, V
CE
= 0.8 V
CES
, T
VJ
=
125
C,
50
A
(RBSOA
)
R
G
= 4.7
W
, Clamped Inductive load, L = 100
m
H
C
ies
V
CE
= 25 V, f = 1 MHz, V
GE
= 0 V
2.9
nF
t
d(on)
100
ns
t
d(off)
220
ns
t
fi
1600
ns
E
on
3.5
mJ
E
off
12
mJ
R
thJH
1 K/W
I
R
V
R
= V
RRM
,
T
VJ
= 25
C
0.1
mA
V
R
= V
RRM
,
T
VJ
= 150
C
3
mA
V
F
I
F
= 25 A,
T
VJ
= 25
C
1.16
V
V
T0
For power-loss calculations only
0.8
V
r
T
T
VJ
= 150
C
12.5
m
W
R
thJH
per diode
1.5 K/W
Rectifier Diodes
Fast Recovery Diode
V
CE
= 600 V, I
C
= 25 A
V
GE
= 15 V, R
G
= 4.7
W
Inductive load; L = 100
m
H
T
VJ
=
125
C
IGBT
Module
749
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