JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
S9011
TRANSISTOR
NPN
FEATURE
Power dissipation
P
CM
: 0.31 W
Tamb=25
Collector current
I
CM:
0.03 A
Collector-base voltage
V
(BR)CBO
: 30 V
Operating and storage junction temperature range
Tj, T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= 100
A
I
E
=0
30
V
Collector-emitter breakdown voltage
V(BR)
CEO
I
C
= 0.1 mA , I
B
=0
20
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 100
A
I
C
=0
4
V
Collector cut-off current
I
CBO
V
CB
=16V , I
E
=0
0.1
A
Collector cut-off current
I
CBO
V
CB
=16V , I
E
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
= 3.5V, I
C
=0
0.1
A
DC current gain
h
FE(1)
V
CE
=5V, I
C
=1mA
28
270
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 10 mA, I
B
= 1mA
0.3
V
Base-emitter voltage
V
BE(sat)
I
C
= 10 mA, I
B
= 1mA
1
V
Transition frequency
f
T
V
CE
=5V,I
C
=1mA,
f=30MHz
150
MHz
CLASSIFICATION OF h
FE(1)
Rank
D
E
F
G
H
I
J
Range
28-45
39-60
54-80
72-108
97-146
132-198
180-270
1
2
3
TO
--
92
1.EMITTER
2. COLLECTOR
3. BASE
D
b
E
A
A
1
C
L
D1
e
e1
TO-92 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Min
3.300
1.100
0.380
0.360
4.400
3.430
4.300
2.440
14.100
0.000
Max
3.700
1.400
0.550
0.510
4.700
4.700
2.640
14.500
1.600
0.380
Min
0.130
0.043
0.015
0.014
0.173
0.135
0.169
0.096
0.555
0.000
Max
0.146
0.055
0.022
0.020
0.185
0.185
0.104
0.571
0.063
0.015
Dimensions In Millimeters
Dimensions In Inches
0.050TYP
1.270TYP
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