2002. 9. 17
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SEMICONDUCTOR
TECHNICAL DATA
2N2904E
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I
CEX
=50nA(Max.), I
BL
=50nA(Max.)
@V
CE
=30V, V
EB
=3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: V
CE(sat)
=0.3V(Max.) @I
C
=50mA, I
B
=5mA.
Low Collector Output Capacitance
: C
ob
=4pF(Max.) @V
CB
=5V.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
A
A1
B1
C
TES6
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2 0.05
0.5 0.05
0.12 0.05
B
D
H
J
B1
B
D
A
A1
C
C
J
H
1
2
3
6
4
P
P
P
5
5
+
_
+
_
+
_
+
_
+
_
+
_
+
_
1. Q EMITTER
2. Q BASE
3. Q BASE
4. Q COLLECTOR
5. Q EMITTER
6. Q COLLECTOR
1
1
1
2
2
2
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
200
mA
Base Current
I
B
50
mA
Collector Power Dissipation
P
C
*
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Total Rating
1
Q1
2
3
6
5
4
Q2
Type Name
Marking
Z C
EQUIVALENT CIRCUIT (TOP VIEW)
2002. 9. 17
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Revision No : 0
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CEX
V
CE
=30V, V
EB
=3V
-
-
50
nA
Base Cut-off Current
I
BL
V
CE
=30V, V
EB
=3V
-
-
50
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10 A, I
E
=0
60
-
-
V
Collector-Emitter Breakdown Voltage *
V
(BR)CEO
I
C
=1mA, I
B
=0
40
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10 A, I
C
=0
6.0
-
-
V
DC Current Gain *
h
FE
(1)
V
CE
=1V, I
C
=0.1mA
40
-
-
h
FE
(2)
V
CE
=1V, I
C
=1mA
70
-
-
h
FE
(3)
V
CE
=1V, I
C
=10mA
100
-
300
h
FE
(4)
V
CE
=1V, I
C
=50mA
60
-
-
h
FE
(5)
V
CE
=1V, I
C
=100mA
30
-
-
Collector-Emitter Saturation Voltage *
V
CE(sat)
1
I
C
=10mA, I
B
=1mA
-
-
0.2
V
V
CE(sat)
2
I
C
=50mA, I
B
=5mA
-
-
0.3
Base-Emitter Saturation Voltage *
V
BE(sat)
1
I
C
=10mA, I
B
=1mA
0.65
-
0.85
V
V
BE(sat)
2
I
C
=50mA, I
B
=5mA
-
-
0.95
Transition Frequency
f
T
V
CE
=20V, I
C
=10mA, f=100MHz
300
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=5V, I
E
=0, f=1MHz
-
-
4.0
pF
Input Capacitance
C
ib
V
BE
=0.5V, I
C
=0, f=1MHz
-
-
8.0
pF
Input Impedance
h
ie
V
CE
=10V, I
C
=1mA, f=1kHz
1.0
-
10
k
Voltage Feedback Ratio
h
re
0.5
-
8.0
x10
-4
Small-Signal Current Gain
h
fe
100
-
400
Collector Output Admittance
h
oe
1.0
-
40
Noise Figure
NF
V
CE
=5V, I
C
=0.1mA Rg=1k ,
f=10Hz 15.7kHz
-
-
5.0
dB
Switching Time
Delay Time
t
d
V
out
Total< 4pF
C
10k
275
V =3.0V
CC
300ns
-0.5V
10.9V
0
t ,t < 1ns, Du=2%
r
in
V
f
-
-
35
nS
Rise Time
t
r
-
-
35
Storage Time
t
stg
20
s
1N916
or equiv.
10.9V
-9.1V
V
out
Total< 4pF
C
V =3.0V
CC
275
10k
V
in
0
t ,t < 1ns, Du=2%
r f
-
-
200
Fall Time
t
f
-
-
50
ELECTRICAL CHARACTERISTICS (Ta=25 )
2N2904E
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
2002. 9. 17
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2N2904E
Revision No : 0
C
0
COLLECTOR CURRENT I (mA)
COLLECTOR CURRENT I (mA)
0
C
0
BASE-EMITTER VOLTAGE V (V)
BE
BE
C
I - V
10
DC CURRENT GAIN h
FE
3
1
0.3
0.1
COLLECTOR CURRENT I (mA)
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
h - I
C
COLLECTOR CURRENT I (mA)
COLLECTOR-EMITTER SATURATION
CE(sat)
V - I
BASE-EMITTER SATURATION
COLLECTOR CURRENT I (mA)
C
BE(sat)
V - I
1
2
3
4
20
40
60
80
100
COMMON EMITTER
Ta=25 C
1
0.8
0.9
0.7
0.6
0.5
0.4
0.3
0.2
I =0.1mA
B
0.4
0.8
1.2
1.6
40
80
120
160
200
COMMON EMITTER
V =1V
CE
FE
C
10
30
100
300
30
50
100
300
500
1k
COMMON EMITTER
V =1V
CE
Ta=125 C
Ta=25 C
Ta=-55 C
CE(sat)
C
VOLTAGE V (V)
COMMON EMITTER
0.01
0.1
0.3
1
0.1
0.03
0.05
0.3
0.5
1
3
10
30
100
I /I =10
C
300
B
Ta=125 C
Ta=25 C
Ta=-55 C
BE(sat)
C
VOLTAGE V (V)
3
Ta=125 C
0.3
0.1
0.1
1
0.5
0.3
1
3
10
Ta=25 C
Ta=-55 C
30
100
300
COMMON EMITTER
I /I =10
5
10
C E
Ta=1
25 C
Ta
=25 C
Ta=55
C
V - I
B
BASE CURRENT I (mA)
0.001
0.1
1
10
CE
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
B
0.2
0.4
0.6
0.8
1.0
0.01
COMMON
EMITTER
Ta=25 C
I =1mA
C
I =10mA
C
C
I =30mA
C
I =100mA
2002. 9. 17
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2N2904E
Revision No : 0
CAPACITANCE C (pF)
ob
3
1
0.3
0.1
REVERSE VOLTAGE V (V)
CB
C - V , C - V
ob
CB
ib
EB
C (pF)
ib
V (V)
EB
10
30
0.5
1
3
5
10
30
50
f=1MHz
Ta=25 C
C
C
ib
ob
COLLECTOR POWER DISSIPATION P (mW)
0
C
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
50
100
150
200
250
25
50
75
100
125
150
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