2002. 9. 17
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SEMICONDUCTOR
TECHNICAL DATA
2N2906E
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I
CEX
=-50nA(Max.), I
BL
=-50nA(Max.)
@V
CE
=-30V, V
EB
=-3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: V
CE(sat)
=-0.4V(Max.) @I
C
=-50mA, I
B
=-5mA.
Low Collector Output Capacitance
: C
ob
=4.5pF(Max.) @V
CB
=5V.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
A
A1
B1
C
TES6
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2 0.05
0.5 0.05
0.12 0.05
B
D
H
J
B1
B
D
A
A1
C
C
J
H
1
2
3
6
4
P
P
P
5
5
+
_
+
_
+
_
+
_
+
_
+
_
+
_
1. Q EMITTER
2. Q BASE
3. Q BASE
4. Q COLLECTOR
5. Q EMITTER
6. Q COLLECTOR
1
1
1
2
2
2
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-40
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-200
mA
Base Current
I
B
-50
mA
Collector Power Dissipation
P
C
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Total Rating
1
Q1
2
3
6
5
4
Q2
Type Name
Marking
Z A
EQUIVALENT CIRCUIT (TOP VIEW)
2002. 9. 17
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Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CEX
V
CE
=-30V, V
EB
=-3V
-
-
-50
nA
Base Cut-off Current
I
BL
V
CE
=-30V, V
EB
=-3V
-
-
-50
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10 A, I
E
=0
-40
-
-
V
Collector-Emitter Breakdown Voltage *
V
(BR)CEO
I
C
=-1mA, I
B
=0
-40
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10 A, I
C
=0
-5.0
-
-
V
DC Current Gain *
h
FE
(1)
V
CE
=-1V, I
C
=-0.1mA
60
-
-
h
FE
(2)
V
CE
=-1V, I
C
=-1mA
80
-
-
h
FE
(3)
V
CE
=-1V, I
C
=-10mA
100
-
300
h
FE
(4)
V
CE
=-1V, I
C
=-50mA
60
-
-
h
FE
(5)
V
CE
=-1V, I
C
=-100mA
30
-
-
Collector-Emitter Saturation Voltage *
V
CE(sat)
1
I
C
=-10mA, I
B
=-1mA
-
-
-0.25
V
V
CE(sat)
2
I
C
=-50mA, I
B
=-5mA
-
-
-0.4
Base-Emitter Saturation Voltage *
V
BE(sat)
1
I
C
=-10mA, I
B
=-1mA
-0.65
-
-0.85
V
V
BE(sat)
2
I
C
=-50mA, I
B
=-5mA
-
-
-0.95
Transition Frequency
f
T
V
CE
=-20V, I
C
=-10mA, f=100MHz
250
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-5V, I
E
=0, f=1MHz
-
-
4.5
pF
Input Capacitance
C
ib
V
BE
=-0.5V, I
C
=0, f=1MHz
-
-
10
pF
Input Impedance
h
ie
V
CE
=-10V, I
C
=-1mA, f=1kHz
2.0
-
12
k
Voltage Feedback Ratio
h
re
1.0
-
10
x10
-4
Small-Signal Current Gain
h
fe
100
-
400
Collector Output Admittance
h
oe
3.0
-
60
Noise Figure
NF
V
CE
=-5V, I
C
=-0.1mA,
Rg=1k , f=10Hz 15.7kHz
-
-
4.0
dB
Switching Time
Delay Time
t
d
V
out
Total 4pF
C
10k
275
V =-3.0V
CC
300ns
-10.6V
0.5V
0
t ,t < 1ns, Du=2%
r
in
V
f
-
-
35
nS
Rise Time
t
r
-
-
35
Storage Time
t
stg
20
s
1N916
or equiv.
-10.9V
9.1V
V
out
Total 4pF
C
V =-3.0V
CC
275
10k
V
in
0
t ,t < 1ns, Du=2%
r f
-
-
225
Fall Time
t
f
-
-
75
2N2906E
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
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2N2906E
Revision No : 0
C
0
COLLECTOR CURRENT I (mA)
COLLECTOR CURRENT I (mA)
0
C
0
BASE-EMITTER VOLTAGE V (V)
BE
BE
C
I - V
10
DC CURRENT GAIN h
FE
-3
-1
-0.3
-0.1
COLLECTOR CURRENT I (mA)
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
h - I
C
COLLECTOR CURRENT I (mA)
COLLECTOR-EMITTER SATURATION
CE(sat)
V - I
BASE-EMITTER SATURATION
COLLECTOR CURRENT I (mA)
C
BE(sat)
V - I
-1
-2
-3
-4
-20
-40
-60
-80
-100
COMMON EMITTER
Ta=25 C
I =-0.1mA
B
-0.4
-0.8
-1.2
-1.6
-40
-80
-120
-160
-200
COMMON EMITTER
V =-1V
CE
FE
C
-10
-30
-100
-300
30
50
100
300
500
1k
COMMON EMITTER
V =-1V
CE
Ta=125 C
Ta=25 C
Ta=-55 C
CE(sat)
C
VOLTAGE V (V)
COMMON EMITTER
-0.01
-0.1
-0.3
-1
-0.1
-0.03
-0.05
-0.3
-0.5
-1
-3
-10
-30
-100
I /I =10
C
-300
B
Ta=125
C
Ta=25 C
Ta=-55 C
BE(sat)
C
VOLTAGE V (V)
-3
Ta=125 C
-0.3
-0.1
-0.1
-1
-0.5
-0.3
-1
-3
-10
Ta=25 C
Ta=-55 C
-30
-100
-300
COMMON EMITTER
I /I =10
-5
-10
C E
-0.8
-0.9
-1
-0.3
-0.2
-0.7
-0.6
-0.5
-0.4
Ta=55 C
Ta=25 C
Ta=125 C
V - I
B
BASE CURRENT I (mA)
-0.001
-0.1
-1
-10
CE
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
B
-0.2
-0.4
-0.6
-0.8
-1.0
-0.01
COMMON
EMITTER
Ta=25 C
I =1mA
C
I =10mA
C
C
I =30mA
C
I =100mA
2002. 9. 17
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2N2906E
Revision No : 0
CAPACITANCE C (pF)
ob
-3
-1
-0.3
-0.1
REVERSE VOLTAGE V (V)
CB
C - V , C - V
ob
CB
ib
EB
C (pF)
ib
V (V)
EB
-10
-30
0.5
1
3
5
10
30
50
f=1MHz
Ta=25 C
C
C
ib
ob
COLLECTOR POWER DISSIPATION P (mW)
0
C
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
50
100
150
200
250
25
50
75
100
125
150
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